Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 58 Search Results

    TRANSISTOR 58 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 58 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PT 4304 a transistor

    Abstract: 2SC3587 noise diode
    Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise


    Original     		PDF 2SC3587 2SC3587 PT 4304 a transistor noise diode

    Untitled

    Abstract: No abstract text available
    Text: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to


    Original     		PDF NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D

    N5 npn transistor

    Abstract: N5 transistor SC-88 419B-02 NSM46211DW6T1G NSM46211DW6
    Text: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to


    Original     		PDF NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D N5 npn transistor N5 transistor SC-88 419B-02 NSM46211DW6

    transistor D 2578

    Abstract: BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting


    Original     		PDF BLW90 SC08a transistor D 2578 BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook

    BLX94C

    Abstract: MBH100 BLX94
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLX94C FEATURES DESCRIPTION • Withstands full load mismatch NPN silicon planar epitaxial transistor primarily intended


    Original     		PDF BLX94C OT122A OT122A BLX94C MBH100 BLX94

    2N5002

    Abstract: switching transistor 331 2N5003 2N5003J 2N5003JV 2N5003JX
    Text: 2N5003 Silicon PNP Transistor Data Sheet Description Applications Complement to the 2N5002 • High-speed power-switching • Power Transistor • PNP silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E


    Original     		PDF 2N5003 2N5002 MIL-PRF-19500 2N5003J) 2N5003JX) 2N5003JV) MIL-STD-750 MIL-PRF-19500/535 2N5002 switching transistor 331 2N5003 2N5003J 2N5003JV 2N5003JX

    2N5004

    Abstract: 2N5005 2N5005J 2N5005JV 2N5005JX
    Text: 2N5005 Silicon PNP Transistor Data Sheet Description Applications Complement to the 2N5004 • High-speed power-switching • Power Transistor • PNP silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E


    Original     		PDF 2N5005 2N5004 MIL-PRF-19500 2N5005J) 2N5005JX) 2N5005JV) MIL-STD-750 MIL-PRF-19500/535 2N5004 2N5005 2N5005J 2N5005JV 2N5005JX

    nec 2741

    Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.


    Original     		PDF 2SC4226 2SC4226 SC-70 2SC4226-T1 nec 2741 2SC4226 datasheet 2SC4226-T1 2SC4226-T2

    2N5004

    Abstract: 2N5004 JANTXV NPN/transistor C 331 switching transistor 331 2N5004J 2N5004JV 2N5005
    Text: 2N5004 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5005 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E


    Original     		PDF 2N5004 2N5005 MIL-PRF-19500 2N5004J) 2N5004JX) 2N5004JV) MIL-STD-750 MIL-PRF-19500/534 2N5004 2N5004 JANTXV NPN/transistor C 331 switching transistor 331 2N5004J 2N5004JV 2N5005

    MDA380

    Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352"
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in


    Original     		PDF BLU99 BLU99/SL BLU99 OT122A) BLU99/SL MDA380 4312 020 36642 MDA385 TRANSISTOR SL 100 "2222 352"

    2SC4225

    Abstract: 9015 transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise amplifier at VHF through UHF band.


    Original     		PDF 2SC4225 2SC4225 9015 transistor

    2SC3356

    Abstract: IC nec 555 transistor 1431 T marking 544 low noise amplifier
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.


    Original     		PDF 2SC3356 2SC3356 IC nec 555 transistor 1431 T marking 544 low noise amplifier

    2SC1223

    Abstract: 2SC2150 2SC2367 NEC NE "micro x" d 2SC2585 2SC3604 NEC NE "micro x" 2SC2148 NE AND micro-X 2SC2149
    Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and


    Original     		PDF 2SC3604 2SC3604 2SC1223 2SC2150 2SC2367 NEC NE "micro x" d 2SC2585 NEC NE "micro x" 2SC2148 NE AND micro-X 2SC2149

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 March 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic,


    Original     		PDF BFT93W OT323 BFT93W BFT93. MBC870 R77/01/pp22

    2SC5436

    Abstract: 2SC5800 uPA863TD-Q2
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor


    Original     		PDF PA863TD 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 2SC5436 2SC5800 uPA863TD-Q2

    NEC 2533

    Abstract: transistor c 6093 NEC k 787 2SC4568 2533 nec
    Text: DATA SHEET SILICON TRANSISTOR 2SC4568 NPN SILICON EPITAXIAL TRANSISTOR UHF TV TUNER OSC/MIXER DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4568 is an NPN silicon epitaxial transistor intended for use as UHF oscillator and UHF mixer in a tuner of TV rceiver.


    Original     		PDF 2SC4568 2SC4568 NEC 2533 transistor c 6093 NEC k 787 2533 nec

    Q2n2222a spice model

    Abstract: q2n2222a 2n2222a spice model q2n222 SPICE model 2n2222a Q2N2222 MICROSEMI 2N2222A BF 198 spice 2N2222A JANTX 2N2222A JAN
    Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2222A Features • • • • SWITCHING TRANSISTOR JAN, JANTX, JANTXV Meets MIL 19500 /255 Collector - Base Voltage 75 V Collector - Current 800 mA High Speed, Medium Current Bipolar Transistor


    Original     		PDF 2N2222A MSC0275A DSW2N2222A Q2n2222a spice model q2n2222a 2n2222a spice model q2n222 SPICE model 2n2222a Q2N2222 MICROSEMI 2N2222A BF 198 spice 2N2222A JANTX 2N2222A JAN

    transistor BUJ100

    Abstract: cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor BUJ100 cfl circuit
    Text: PHILIPS SEMICONDUCTORS APPLICATION NOTE Philips' BUJ100 transistor in TO-92 suits all Compact Fluorescent Lamp powers Philips Semiconductors has developed a new generation of planar passivated, fast switching bipolar lighting transistor that breaks new ground in lighting-transistor technology. Rated at 700 V


    Original     		PDF BUJ100 transistor BUJ100 cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor cfl circuit

    2SC5005

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


    Original     		PDF 2SC5005 2SC5005

    transistor c 6093

    Abstract: NEC 2533 3059 npn transistor t72 marking 2SC4568 s-parameter s11 s12 s21 10000 IC Marking 812
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4568 NPN SILICON EPITAXIAL TRANSISTOR UHF TV TUNER OSC/MIXER DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4568 is an NPN silicon epitaxial transistor intended for use as UHF oscillator and UHF mixer in a tuner of TV receiver.


    Original     		PDF 2SC4568 2SC4568 SC-59 transistor c 6093 NEC 2533 3059 npn transistor t72 marking s-parameter s11 s12 s21 10000 IC Marking 812

    Q2N2221A

    Abstract: Q2N2221 Q2N222 2N2221A JANTX 2N2221A BF 198 spice q2n* npn transistor chip die npn transistor DSW2N2221A
    Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2221A Features SWITCHING TRANSISTOR JAN, JANTX, JANTXV • Meets MIL 19500 /255 • Collector - Base Voltage 75 V • Collector - Current 800 mA • High Speed, Medium Current Bipolar Transistor


    Original     		PDF 2N2221A DSW2N2221A< Q2N2221A Q2N2221 Q2N222 2N2221A JANTX 2N2221A BF 198 spice q2n* npn transistor chip die npn transistor DSW2N2221A

    transistor NEC D 586

    Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500
    Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise


    OCR Scan     		PDF 2SC3587 2SC3587 transistor NEC D 586 nec a 634 NEC D 586 NEC K 2500 NEC 3500

    transistor NEC D 822 P

    Abstract: NEC D 822 P transistor NEC D 587 2sc3355 transistor NEC B 617 nec a 634 transistor marking S00 TRANSISTOR b 772 p
    Text: DATA SHEET SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise PACKAGE DIMENSIONS in millimeters inches am plifier at VHF, UHF and CATV band.


    OCR Scan     		PDF 2SC3355 2SC3355 transistor NEC D 822 P NEC D 822 P transistor NEC D 587 transistor NEC B 617 nec a 634 transistor marking S00 TRANSISTOR b 772 p

    transistor NEC D 588

    Abstract: IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356
    Text: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.


    OCR Scan     		PDF 2SC3356 2SC3356 transistor NEC D 588 IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356