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    TRANSISTOR 5C5 Search Results

    TRANSISTOR 5C5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 5C5 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CMLT5551 SURFACE MOUNT SILICON DUAL, HIGH VOLTAGE NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors manufactured by the epitaxial planar process and epoxy molded in an SOT-563 suface


    Original     		CMLT5551 OT-563 100MHz 12-February PDF

    b12 7d diode

    Abstract: No abstract text available
    Text: IPB034N06N3 G Id\Q "%&$!"# 3 Power-Transistor Product Summary Features P 6? ABH>3 A53 C96931C9? > =? C? A 4A9E5B1>4 43 43 , & , P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H .( J R 9H"[Z#$YMc +&, Y" I9 )( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z#


    Original     		IPB034N06N3 b12 7d diode PDF

    IPA105N15N3

    Abstract: IPA105N15N 81a diode
    Text: IPA105N15N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H -( J R  , ? >=1G )(&- Y" +/ I9 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P   S ? @5A1C9>7 C5=@5A1CDA5


    Original     		IPA105N15N3 IPA105N15N 81a diode PDF

    65A3

    Abstract: 5E DIODE marking c-9
    Text: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& , R  , ? >=1G, & P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  I9   P ' 3 81>>5< >? A=1<<5E5<


    Original     		IPB037N06N3 IPI040N06N3 IPP040N06N3 65A3 5E DIODE marking c-9 PDF

    B1C DIODE

    Abstract: IPB039N10N3 marking 1c marking a5 4r diode
    Text: IPB039N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc +&1 Y" I9 ).( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH


    Original     		IPB039N10N3 B1C DIODE marking 1c marking a5 4r diode PDF

    65a3

    Abstract: be5a IPB025N10N3G V9910 95E-9
    Text: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH


    Original     		IPB025N10N3 726-IPB025N10N3G 65a3 be5a IPB025N10N3G V9910 95E-9 PDF

    IPB025N10N3

    Abstract: IPB025 b1c diode marking a5 4r diode marking a5 4r diode b1c
    Text: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH


    Original     		IPB025N10N3 IPB025 b1c diode marking a5 4r diode marking a5 4r diode b1c PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB090N06N3 G IPP093N06N3 G Id\Q  3 Power-Transistor Product Summary Features P฀6?A฀BH>3 ฀A53C96931C9?>฀4A9E5B฀1>4฀43 43฀,& , P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H .( J R ,?>=1G฀,& 1 Y I9 -(


    Original     		IPB090N06N3 IPP093N06N3 381A75à A53C96931C9? A1C54 C1A75Cà 931C9? C85AF9B5à PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G  3 Power-Transistor Product Summary Features V 9H . J P฀6?A฀BH>3 ฀A53C96931C9?>฀4A9E5B฀1>4฀43 43฀,& , R ,?>=1G฀,& +&/ Y P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ (&


    Original     		IPB037N06N3 IPI040N06N3 IPP040N06N3 A53C96931C9? 381A75à A1C54 C1A75Cà 931C9? PDF

    2N3553

    Abstract: 2N3375 WE VQE 23 F 2n3632 transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E
    Text: 41E D • IPHIN 711Qö2b 00EÖ033 1 2N3375 2N3553 2N3632 PHILIPS INTERNATIONAL T - 3 3 - 0 < ? SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metai envelope with the col lector connected to the case. The 2N3375 and the 2N3632 are n-p-n overlay transistors In T 0 -6 0 metal envelopes with the electrodes


    OCR Scan     		2n3375 2n3553 2n3632 2N3632 T0-60 WE VQE 23 F transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E PDF

    IPP093N06N3G

    Abstract: No abstract text available
    Text: IPB090N06N3 G IPP093N06N3 G Id\Q "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& , R  , ? >=1G, & P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &    I9 .( J 1 Y" -( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z#


    Original     		IPB090N06N3 IPP093N06N3 IPP093N06N3G PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB039N10N3 G  3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H ( J R 9H"[Z#$YMc +&1 Y I9 ).( 6 P฀.5AH฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀"978฀3DAA5>C฀31@129<9CH


    Original     		IPB039N10N3 381A75à C1A75Cà 931C9? C85AF9B5à PDF

    Untitled

    Abstract: No abstract text available
    Text: IPA105N15N3 G TM  3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H -( J R ,?>=1G฀ )(&- Y I9 +/ 6 P฀.5AH฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀ ฀S฀?@5A1C9>7฀C5=@5A1CDA5


    Original     		IPA105N15N3 381A75à C1A75Cà 931C9? C85AF9B5à PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB025N10N3 G  3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H ( J R 9H"[Z#$YMc *&- Y I9 )0( 6 P฀GCA5=5<H฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀"978฀3DAA5>C฀31@129<9CH


    Original     		IPB025N10N3 381A75à C1A75Cà 931C9? C85AF9B5à PDF

    Transistor 5C5

    Abstract: MARKING 5c5 CMLT5551
    Text: Central CMLT5551 SURFACE MOUNT PICOminiTM DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors, manufactured by the epitaxial planar


    Original     		CMLT5551 OT-563 OT-563 100MHz 15-October Transistor 5C5 MARKING 5c5 CMLT5551 PDF

    Transistor 5C5

    Abstract: CMLT5551
    Text: CMLT5551 SURFACE MOUNT DUAL NPN SMALL SIGNAL HIGH VOLTAGE SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors, manufactured by the epitaxial planar


    Original     		CMLT5551 OT-563 100MHz 20-January Transistor 5C5 CMLT5551 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMLT5551 SURFACE MOUNT DUAL NPN SMALL SIGNAL HIGH VOLTAGE SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors, manufactured by the epitaxial planar


    Original     		CMLT5551 OT-563 100MHz 20-January PDF

    CA3062

    Abstract: CD40338 H5610 ic 4026b 3ssv monsanto
    Text: ^ Tex a s In s t r u m e n t s CD4026B, CD4033B Types Data sheet acquired from Harris S em iconductor SCHS031 CMOS Decade Counters/Dividers High-Voltage Types <20-Volt Rating With Decoded 7-Segment Display Outputs and: Display Enable — CD4026B Ripple Blanking — CD40336


    OCR Scan     		SCHS031 CD4026B, CD4033B 20-Volt CD4026B CD40336 CA3062 CD40338 H5610 ic 4026b 3ssv monsanto PDF

    ANDIGILOG

    Abstract: asc7611 AMD Athlon 64 X2 AMD Athlon 64 X2 3000 ADE3000HAX5DC AMD Athlon 64 X2 thermal 2N3904 2N3906 MMBT3904 Laptop motherboard thermal temp. sensing block diagram laptop intel MOTHERBOARD CIRCUIT diagram
    Text: aSC7611 HARDWARE MONITOR WITH INTEGRATED FAN CONTROL PRODUCT SPECIFICATION Preliminary Specification Measurement System The aSC7611 has a two wire digital interface compatible with SMBus 2.0. Using a 10-bit ΣΔ- ADC, the aSC7611 measures the temperature of two remote diode connected


    Original     		aSC7611 aSC7611 10-bit 70A05007 ANDIGILOG AMD Athlon 64 X2 AMD Athlon 64 X2 3000 ADE3000HAX5DC AMD Athlon 64 X2 thermal 2N3904 2N3906 MMBT3904 Laptop motherboard thermal temp. sensing block diagram laptop intel MOTHERBOARD CIRCUIT diagram PDF

    receiver philips fr 310

    Abstract: 173 MHz RF receiver "Pager receiver" c10c3 KS 2152 tl 4216 4 MHz Oscillator pcf5001 POCSAG POCSAG Receiver
    Text: Philips Semiconductors Product specification Advanced pager receiver UAA2082 FEATURES GENERAL DESCRIPTION • Wide frequency range: VHF, UHF and 900 MHz bands The UAA2082 is a high-performance low-power radio receiver circuit primarily intended for VHF, UHF and


    OCR Scan     		UAA2082 PCA5000A, PCF5001 PCD5003 wir260 711062b receiver philips fr 310 173 MHz RF receiver "Pager receiver" c10c3 KS 2152 tl 4216 4 MHz Oscillator POCSAG POCSAG Receiver PDF

    Untitled

    Abstract: No abstract text available
    Text: MIC3001 FOM Management IC with Internal Calibration General Description Features The MIC3001 enables the implementation of sophisticated, hot-pluggable fiber optic transceivers with intelligent laser control and an internally calibrated Digital Diagnostic Monitoring Interface per SFF-8472. It


    Original     		MIC3001 MIC3001 SFF-8472. 10Gbps M9999-082404-A PDF

    MIC3001

    Abstract: MIC3001BML MIC3001BMLTR MIC3001GML SY89835U POH SOT23 MARKING 27h SOT-23 AXH marking ok laser diode sdh 64
    Text: MIC3001 SFP Management IC with Internal Calibration General Description Features The MIC3001 enables the implementation of sophisticated, hot-pluggable fiber optic transceivers with intelligent laser control and an internally calibrated Digital Diagnostic Monitoring Interface per SFF-8472. It


    Original     		MIC3001 MIC3001 SFF-8472. 10Gbps M9999-082404-A MIC3001BML MIC3001BMLTR MIC3001GML SY89835U POH SOT23 MARKING 27h SOT-23 AXH marking ok laser diode sdh 64 PDF

    MIC3001GML

    Abstract: INFINEON PART MARKING 252 laser diode samsung W6 marking sot-23 samsung laser diode MIC3001 MIC3001BML MIC3001BMLTR MIC3002 SY89835U
    Text: MIC3001 FOM Management IC with Internal Calibration Consider MIC3002 for New Designs General Description Features The MIC3001 enables the implementation of sophisticated, hot-pluggable fiber optic transceivers with intelligent laser control and an internally calibrated


    Original     		MIC3001 MIC3002 MIC3001 SFF-8472. 10Gbps M9999-082404-A MIC3001GML INFINEON PART MARKING 252 laser diode samsung W6 marking sot-23 samsung laser diode MIC3001BML MIC3001BMLTR SY89835U PDF

    mic3003

    Abstract: DETAILS of ic 4071
    Text: MIC3001 FOM Management IC with Internal Calibration Consider MIC3003 for New Designs General Description Features The MIC3001 enables the implementation of sophisticated, hot-pluggable fiber optic transceivers with intelligent laser control and an internally calibrated digital diagnostic


    Original     		MIC3001 MIC3003 MIC3001 SFF-8472. M9999-082404-A DETAILS of ic 4071 PDF