8N60
Abstract: 600v 75a mosfet transistor 8n60 8N60 equivalent MOSFET transistor 75A 600V MOSFET
Text: isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor 8N60 •FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V Min ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified
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Untitled
Abstract: No abstract text available
Text: Jbztni-L.onaucto'i iJ^ , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel Mosfet Transistor MTP1N60 FEATURES • Drain Current -ID= 1A@ TC=25°C • Drain Source Voltage: VDSS= 600V(Min)
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MTP1N60
O-251
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9n60
Abstract: 9n60 mosfet mosfet transistor transistor 9n60 N-Channel 600V MOSFET
Text: isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor 9N60 •FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V Min ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Avalanche Energy Specified
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Untitled
Abstract: No abstract text available
Text: i, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP7N60 N-Channel Mosfet Transistor • FEATURES • Drain Current -ID= 7A@ TC=25°C • Drain Source Voltage: VDSS= 600V(Min) • Static Drain-Source On-Resistance
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MTP7N60
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Untitled
Abstract: No abstract text available
Text: Cx / i, LJ nc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP6N60 N-Channel Mosfet Transistor FEATURES • Drain Current -ID= 6A@ TC=25°C • Drain Source Voltage1 0(2) •, ^f£\ /-s, : VDSs= 600V(Min)
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MTP6N60
O-220C
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6r950c6
Abstract: IPA60R950C6 IPP60R950C6 VDD480V IPB60R950C6 IPD60R950C6 JESD22 6r950c 6R950
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6
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IPx60R950C6
IPD60R950C6,
IPB60R950C6
IPP60R950C6,
IPA60R950C6
6r950c6
IPA60R950C6
IPP60R950C6
VDD480V
IPB60R950C6
IPD60R950C6
JESD22
6r950c
6R950
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6R190E6
Abstract: IPA60R190E6 IPW60R190E6 6r190e 6r190 IPP60R190E6 JESD22 transistor ag qs id95 ID95 MARKING
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R190E6, IPA60R190E6
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IPx60R190E6
IPP60R190E6,
IPA60R190E6
IPW60R190E6
6R190E6
IPA60R190E6
IPW60R190E6
6r190e
6r190
IPP60R190E6
JESD22
transistor ag qs
id95
ID95 MARKING
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6R190C6
Abstract: 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 6r190c6 infineon 6R19
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6
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IPx60R190C6
IPA60R190C6,
IPB60R190C6
IPI60R190C6,
IPP60R190C6
IPW60R190C6
726-IPB60R190C6
IPB60R190C6
6R190C6
6r190
6r190c
SMD TRANSISTOR MARKING 9D
IPA60R190C6
IPW60R190C6
6r190c6 infineon
6R19
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6R280E6
Abstract: IPA60R280E6 IPP60R280E6 IPW60R280E6 6r280 IPx60R280E6 JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R280E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R280E6, IPA60R280E6
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IPx60R280E6
IPP60R280E6,
IPA60R280E6
IPW60R280E6
6R280E6
IPA60R280E6
IPP60R280E6
IPW60R280E6
6r280
IPx60R280E6
JESD22
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6r600e6
Abstract: infineon marking TO-252 E6 DIODE IPD60R600E6 IPA60R600E6 diode smd E6 JESD22 infineon Diode SMD SJ 19
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6
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IPx60R600E6
IPD60R600E6,
IPP60R600E6
IPD60R600E6
6r600e6
infineon marking TO-252
E6 DIODE
IPD60R600E6
IPA60R600E6
diode smd E6
JESD22
infineon
Diode SMD SJ 19
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6R520E6
Abstract: IPA60R520E6 JESD22 TO-220 package thermal resistance 6r520
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6
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IPx60R520E6
IPP60R520E6,
IPA60R520E6
6R520E6
IPA60R520E6
JESD22
TO-220 package thermal resistance
6r520
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6R380e6
Abstract: IPA60R380E6 IPP60R380E6 IPA60R380C6 JESD22 IPP60R380E TO-220 package thermal resistance
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R380E6, IPA60R380E6
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IPx60R380E6
IPP60R380E6,
IPA60R380E6
6R380e6
IPA60R380E6
IPP60R380E6
IPA60R380C6
JESD22
IPP60R380E
TO-220 package thermal resistance
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6R070C6
Abstract: 6R070C6 MOSFET TRANSISTOR IPW60R070C6 JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPW60R070C6 Description
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IPW60R070C6
6R070C6
6R070C6 MOSFET TRANSISTOR
IPW60R070C6
JESD22
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6r041c6
Abstract: IPW60R041C6 6r041c6 mosfet data ipw60r041 6R041 infineon MOSFET parameter test JESD22 if444 c6 transistor uc pfc
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R041C6 Data Sheet Rev. 2.0, 2010-03-29 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPW60R041C6 Description
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IPW60R041C6
6r041c6
IPW60R041C6
6r041c6 mosfet data
ipw60r041
6R041
infineon MOSFET parameter test
JESD22
if444
c6 transistor
uc pfc
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6r385P
Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description
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IPL60R385CP
150mm²
6r385P
IPL60R385CP
JESD22
EL series small size SMD transistor
infineon msl
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transistor 6R385P
Abstract: 6r385 6R385P IPL60R385CP 6r385p infineon 6R38 ipl60r VDD480 transistor smd marking Ag g1 smd diode
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast
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IPL60R385CP
150mm²
726-IPL60R385CP
transistor 6R385P
6r385
6R385P
IPL60R385CP
6r385p infineon
6R38
ipl60r
VDD480
transistor smd marking Ag
g1 smd diode
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6R199P
Abstract: mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description
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IPL60R199CP
150mm²
6R199P
mosfet 6R199
ipl60r199cp
6R199P DATA SHEET
smd transistor AR 6
JESD22
EL series small size SMD transistor
6R19
IPL60R199
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FD600R12KF4
Abstract: G1 TRANSISTOR
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 600 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1
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A13/97
FD600R12KF4
FD600R12KF4
G1 TRANSISTOR
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G1 TRANSISTOR
Abstract: FD600R12KF4
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 600 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 16 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1
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A13/97
FD600R12KF4
G1 TRANSISTOR
FD600R12KF4
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FD400R12KF4
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1
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A15/97
FD400R12KF4
FD400R12KF4
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FD400R12KF4
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1
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FD400R12KF4
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IGBT FF 300 r12
Abstract: FF400R12KF4
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2
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A15/97
IGBT FF 300 r12
FF400R12KF4
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FD600R12KF4
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 600 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1
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FD600R12KF4
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APT30GF60BN
Abstract: APT30GF60BNU1
Text: ADVANCED PO W ER Te c h n o lo g y APT30GF60BNU1 600V 30A WER MOS IV IGBÏ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST PARALLEL DIODE M A X IM U M R A TIN G S Symbol VcE S All Ratings: T c = 25°C unless otherwise specified.
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APT30GF60BNU1
O-247AD
APT30GF60BN
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