DTC114TE
Abstract: SMD310 motorola DTC114TE
Text: MOTOROLA Order this document by DTC114TE/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a
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DTC114TE/D
DTC114TE
416/SC
DTC114TE/D*
DTC114TE
SMD310
motorola DTC114TE
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DTC114YE
Abstract: SMD310 motorola DTC114YE
Text: MOTOROLA Order this document by DTC114YE/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114YE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a
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DTC114YE/D
DTC114YE
416/SC
DTC114YE/D*
DTC114YE
SMD310
motorola DTC114YE
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DTA143EE
Abstract: SMD310 43 DTA143EE
Text: MOTOROLA Order this document by DTA143EE/D SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic
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DTA143EE/D
DTA143EE
416/SC
DTA143EE/D*
DTA143EE
SMD310
43 DTA143EE
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DTA114YE
Abstract: SMD310
Text: MOTOROLA Order this document by DTA114YE/D SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic
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DTA114YE/D
DTA114YE
416/SC
DTA114YE/D*
DTA114YE
SMD310
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MC3356P
Abstract: motorola transistor array 14 pin dip MC3346 all ic data Motorola ic DATA BOOK MC3346D transistor 102 ARRAY TRANSISTOR 8 Motorola fe suffix
Text: Order this document by MC3346/D MC3346 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for consumer and industrial designs.
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MC3346/D
MC3346
MC3346
MC3346/D*
MC3356P
motorola transistor array 14 pin dip
all ic data
Motorola ic DATA BOOK
MC3346D
transistor 102
ARRAY TRANSISTOR 8
Motorola fe suffix
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Untitled
Abstract: No abstract text available
Text: Order this document by MC3346/D MC3346 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for consumer and industrial designs.
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MC3346/D
MC3346
MC3346
MC3346/D*
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2SC5005
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2SC5005
2SC5005
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2SC5006
Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
2SC5006-T1
"Small Signal Amplifiers"
P1038
TD-2399
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nec 2401 831
Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and
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2SC5010
2SC5010
nec 2401 831
nec 2401
2SC5010-T1
437 20000
marking 83
7749 transistor
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BUX45
Abstract: transistor et 460
Text: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection
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CB-19
BUX45
transistor et 460
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97CC
Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18
Text: ESM 18 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE High current fast switching transistor Transistor de commutation rapide fort courant V CEO 100 V Amplification BF ou H F grands signaux •c 25 A Thermal fatigue inspection
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CB-19
97CC
transistor ESM 16
transistor ESM 30
ESM18
transistor ESM 18
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transistor BUX
Abstract: BUX14 TR07
Text: *B U X 14 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN, TRIPLE DIFFUSE % Preferred device D is p o s itif recom m andé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension Thermal fatigue inspection
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BUX14
CB-19
transistor BUX
BUX14
TR07
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TCA 785
Abstract: transistor BUX 48 vu bux BUX41 sonde de temperature
Text: *BUX 41N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE îfc Preferred device D isp o sitif recom m andé High speed, high current, high power transistor Transistor de puissance rapide, fo r t courant Thermal fatigue inspection
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CB-19
TCA 785
transistor BUX 48
vu bux
BUX41
sonde de temperature
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BUX20
Abstract: bux 716 transistor BUX
Text: *B U X 2 0 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN. TRIPLE DIFFUSE Preferred device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant Thermal fatigue inspection
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BUX20
CB-159
BUX20
bux 716
transistor BUX
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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ZO 107 MA
Abstract: 341S
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5009
2SC5009
ZO 107 MA
341S
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transistor 1211
Abstract: transistor su 312 transistor zo 109
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2SC5005
2SC5005
Collect69
transistor 1211
transistor su 312
transistor zo 109
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TRANSISTOR 2SC 2581
Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS
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2SC5009
2SC5009
TRANSISTOR 2SC 2581
2sc 1919
NEC NF 932
2sc 1915
TRANSISTOR 2SC 733
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IC 4556
Abstract: 4556D transistor Siemens 14 S S 92 GPB16 4556 d transistor BF 939
Text: 2SC D • a23SbOS OQOMSSb 4 WÊSIZ6 . PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 939 4556 D - BF 93 9 is a PNP silicon RF pianar transistor in TO 92 plastic package DIN 41868 . The transistor is particularly suitable for controllable VH F input stages in TV tuners.
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a23SbOS
62702-F
G--14
IC 4556
4556D
transistor Siemens 14 S S 92
GPB16
4556 d
transistor BF 939
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transistor tic 106
Abstract: BCY66 AF200 transistor tic 106 N tic 105 Q60203-Y66 tic 246 h tic 246 tic 245
Text: BCY66 NPN Transistor for low-noise AF pre-stages BCY 66 is an epitaxial NPN silicon planar transistor in a case 18 A 3 DIN 41 876 TO-18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise AF pre-stages.
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BCY66
BCY66
60203-Y
transistor tic 106
AF200
transistor tic 106 N
tic 105
Q60203-Y66
tic 246 h
tic 246
tic 245
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SN 4931
Abstract: 2sc 3476 2SC 1885 SN 4931 N
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the
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2SC5005
2SC5005
SN 4931
2sc 3476
2SC 1885
SN 4931 N
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Untitled
Abstract: No abstract text available
Text: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for
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023SbQS
Q004312
60203-Y66
BCY66
QQ0M31Ö
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UTC 7312
Abstract: BUX 88 S BUX11 bux THOMSON BUX 115 BUX11N TRANSISTOR -R7t
Text: *BUX 11N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TR AN S IS TO R S IL IC IU M NPN, T R IP L E D IF F U S E Preferred device D is p o s itif recommandé High speed, high current, high power transistor Transistor de puissance rapide, f o r t couran t 160 V
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CB-19
UTC 7312
BUX 88 S
BUX11
bux THOMSON
BUX 115
BUX11N
TRANSISTOR -R7t
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
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