la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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6r125c6
Abstract: IPx60R125C6 MOSFET TRANSISTOR SMD MARKING CODE A1 INFINEON to-220 date code marking MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R125C6 IPB60R125C6 IPP60R125C6 to247 pcb footprint JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6
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IPx60R125C6
IPA60R125C6,
IPB60R125C6
IPP60R125C6
IPW60R125C6
6r125c6
IPx60R125C6
MOSFET TRANSISTOR SMD MARKING CODE A1
INFINEON to-220 date code marking
MOSFET TRANSISTOR SMD MARKING CODE 11
IPA60R125C6
IPB60R125C6
to247 pcb footprint
JESD22
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UP2855 Preliminary PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it
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UP2855
UP2855
OT-223
UP2855L-AA3-R
UP2855G-AA3-R
QW-R207-024
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2N1046
Abstract: germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e
Text: TYPE 2N1046 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTOR HIGH-FREQUENCY POWER TRANSISTOR FOR MILITARY AND INDUSTRIAL APPLICATIONS 5H %I P* mechanical data This transistor is in a p recision-w elded, herm etically sealed enclosure. The mounting b ase provides an
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2N1046
DC-11
germanium power transistor
diode germanium tu 38 f
Germanium Transistor
Texas Germanium
639 TRANSISTOR PNP
Germanium power
diode germanium tu 38 e
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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ZO 107 MA
Abstract: 341S
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5009
2SC5009
ZO 107 MA
341S
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Untitled
Abstract: No abstract text available
Text: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
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NE58219
2SC5004
2SC5004
NE58219-A
2SC5004-A
NE58219-T1-A
2SC5004-T1-A
perfor516
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TLP635F
Abstract: TLP635 TLP636 TLP636F TLP635-F VDE0110 VDE-0110 VDE0804 VDE-0883 VDE0750T1
Text: GaAs IRED a PHOTO-TRANSISTOR TLP635F, 636F TENTATIVE DATA Unit in mm OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP635F and TLP636F consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead
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TLP635F,
TLP635F
TLP636F
TLP635
TLP636.
5000Vrms
TLP636F
500Vac
TLP636
TLP635-F
VDE0110
VDE-0110
VDE0804
VDE-0883
VDE0750T1
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NEC JAPAN 237 521 02
Abstract: transistor zo 607 2SC5004
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2SC5004
2SC5004
NEC JAPAN 237 521 02
transistor zo 607
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TRANSISTOR 2SC 2581
Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS
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2SC5009
2SC5009
TRANSISTOR 2SC 2581
2sc 1919
NEC NF 932
2sc 1915
TRANSISTOR 2SC 733
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transistor zo 607
Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
Text: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
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NE58219
2SC5004
2SC5004
NE58219
NE58219-T1
2SC5004-T1
transistor zo 607
zo 607 MA
2SC5004-T1
NE58219-T1
nec 237 521 02
NE582
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UP2855 PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it ideal for applications, such as driving and power management functions
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UP2855
UP2855
UP2855L-AA3-R
UP2855G-AA3-R
OT-223
QW-R207-024
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UP2855 PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it ideal for applications, such as driving and power management functions
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UP2855
UP2855
OT-223
UP2855L-AA3-R
UP2855G-AA3-R
QW-R207-
QW-R207-024
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PDF
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6r125c6
Abstract: IPP60R125C6 IPA60R125C6 6R125 c6 transistor IPB60R125C6 TRANSISTOR SMD MARKING CODE IPW60R125C6 JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.0, 2009-09-25 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6
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IPx60R125C6
IPA60R125C6,
IPB60R125C6
IPP60R125C6
IPW60R125C6
6r125c6
IPA60R125C6
6R125
c6 transistor
IPB60R125C6
TRANSISTOR SMD MARKING CODE
IPW60R125C6
JESD22
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6r125c6
Abstract: 6R125 IPx60R125C6 marking code br SMD transistor transistor 600v IPA60R125C6 IPB60R125C6 IPP60R125C6 IPW60R125C6 JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6
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IPx60R125C6
IPA60R125C6,
IPB60R125C6
IPP60R125C6
IPW60R125C6
6r125c6
6R125
IPx60R125C6
marking code br SMD transistor
transistor 600v
IPA60R125C6
IPB60R125C6
IPW60R125C6
JESD22
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6R125
Abstract: 6R125C6
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 0.9, 2009-08-26 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6
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IPx60R125C6
IPA60R125C6,
IPB60R125C6
IPP60R125C6
IPW60R125C6
6R125
6R125C6
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transistor equivalent
Abstract: Programmable Unijunction Transistor unijunction transistor BRY39 application data BRY39 unijunction application note philips bry39 BRY39 circuit unijunction programmable unijunction
Text: Philips Semiconductors Product specification Programmable unijunction transistor/ Silicon controlled switch FEATURES BRY39 PINNING • Silicon controlled switch • Programmable unijunction transistor. APPLICATIONS PIN DESCRIPTION 1 cathode 2 cathode gate
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BRY39
transistor equivalent
Programmable Unijunction Transistor
unijunction transistor
BRY39 application data
BRY39
unijunction application note
philips bry39
BRY39 circuit
unijunction
programmable unijunction
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D 1437 transistor
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the
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2SC5004
D 1437 transistor
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transistor bd170
Abstract: BD170 BD168 itt ol 170
Text: MOT OR OL A SC 6367254 -CXSTRS/R F> Tb b3t?aSM 96D 8 0 5 5 7 MOTOROLA .SC <XSTRS/R F L DDfl GSS? D BD166 BD168 BD170 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC M EDIUM POWER SILICON PNP TRANSISTOR 1.5 AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing
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BD166
BD168
BD170
transistor bd170
BD170
itt ol 170
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TD2400
Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Text: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5007
2SC5007
TD2400
transistor zo 607
2SC5007-T1
NEC 1555
AK-804 164-1-1
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TRANSISTOR BD 187
Abstract: TRANSISTOR 187 transistor tl 187 transistor bd 320 c BD189 BD185 BD187 10 watt power transistor bd bD1894 motorola power transistor to-126
Text: MOTOROLA 6367254 SC -CXSTRS/R F> MOTOROLA SC ^ XSTRS/R »TJt.3 t.7 a S 4 96D 8 0 5 6 3 F D BD185 BD187 BD189 MOTOROLA m SEMICONDUCTOR TECHNICAL DATA PLASTIC' M ED IU M POWER SILICON NPN TRANSISTOR 4 AMPERE POWER TRANSISTOR . . . designed for use in 5 to 10 W att audio amplifiers utilizing
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transistor NEC B 617
Abstract: nec. 5.5 473
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5007
2SC5007
transistor NEC B 617
nec. 5.5 473
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nec 2401 831
Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and
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2SC5010
2SC5010
nec 2401 831
nec 2401
2SC5010-T1
437 20000
marking 83
7749 transistor
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transistor tl 187
Abstract: BD187 TRANSISTOR 187 TRANSISTOR BD 187 BD185 BD189 TL 187 TRANSISTOR NPN TL 187 TRANSISTOR BE 187 TRANSISTOR BD transistor
Text: MOTOROLA 6367254 SC -CXSTRS/R F> MOTOROLA SC ^ XSTRS/R ßF^t.3ti7as4 96D 8 0 5 6 3 F> D BD185 BD187 BD189 MOTOROLA m SEM ICO NDUCTO R TECHNICAL DATA PLASTIC M E D IU M POWER SILICON NPN TRANSISTOR 4 AMPERE POWER TRANSISTOR . . . designed for use in 5 to 1 0 W att audio amplifiers utilizing
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