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    TRANSISTOR 734 Search Results

    TRANSISTOR 734 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 734 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEC JAPAN 282 110 01

    Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


    Original     		PDF 2SC4570 2SC4570 SC-70) 2SC4570-T1 NEC JAPAN 282 110 01 NEC 2561 TYP 513 309 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261

    nec 3012

    Abstract: NEC 2705 2SC5288 of ic 74112 2SC5289 transistor 2SC5288 2SC5192 2SC5288-T1 74278 Ic 74191
    Text: DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.


    Original     		PDF 2SC5288 2SC5288 nec 3012 NEC 2705 of ic 74112 2SC5289 transistor 2SC5288 2SC5192 2SC5288-T1 74278 Ic 74191

    equivalent of transistor 8050

    Abstract: HT818D0
    Text: HT818D0 22.4 Second LOG-PCM Speech Features • • • • • • • • • • Operating voltage: 2.4V~5.0V Directly drives an external transistor Low standby current 1µA typ. for VDD=3V Minimal external components 508 words table ROM for key functions


    Original     		PDF HT818D0 KEY12 equivalent of transistor 8050 HT818D0

    8050 transistor

    Abstract: 91450 1N4148 HT818D0
    Text: HT818D0 22.4 Second LOG-PCM Speech Features • • • • • • • • • • Operating voltage: 2.4V~5.0V Directly driving an output transistor Low stand-by current 1µA Typ. for VDD=3V Minimum external components FLAG1 options: – End-pulse output


    Original     		PDF HT818D0 KEY12 180ms KEY12 1N4148 8050 transistor 91450 1N4148 HT818D0

    equivalent of transistor 8050

    Abstract: HT814D0
    Text: HT814D0 8.4 Second LOG-PCM Speech Features • • • • • • • • • • • Operating voltage: 2.4V~5.0V Directly drives an external transistor Low standby current 1µA typ. for VDD=3V Minimal external components 508 words table ROM for key functions


    Original     		PDF HT814D0 KEY12 HT814D1 equivalent of transistor 8050 HT814D0

    d768 transistor

    Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
    Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE32584C NE32584C d768 transistor 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442

    ba3706

    Abstract: BA3707
    Text: Audio ICs Mute detector IC BA3707 The BA3707 is a mute detector, with an on-chip output transistor that can directly drive a solenoid. It features low operating voltage, and a wide power supply voltage range. FApplications Mute, and end-of-tape detector for tape players


    Original     		PDF BA3707 BA3707 300mA BA3706 BA3706 BA3706.

    FMMT734

    Abstract: smd transistor 5k
    Text: Transistors SMD Type Power Darlington Transistor FMMT734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Extremely low VCE sat at high current (1A) 0.55 Very high hFE at high current (5A) +0.1 1.3-0.1 +0.1 2.4-0.1 625mW Power Dissipation 0.4 3 2 +0.1


    Original     		PDF FMMT734 OT-23 625mW -10mA, -100mA, -10mA 100MHz -500mA, FMMT734 smd transistor 5k

    IC SEM 2105

    Abstract: 3771 nec
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low


    OCR Scan     		PDF 2SC5008 2SC5008 IC SEM 2105 3771 nec

    transistor 2222a

    Abstract: No abstract text available
    Text: SERIES TPQ QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most


    OCR Scan     		PDF 14-pin TPQA06 TPQA55 TPQA56 PSA55 PSA56 2N2907 2N3904 2N3906 transistor 2222a

    74286

    Abstract: TLP733F VDE0804
    Text: GaAs IRED S PHOTO-TRANSISTOR TLP733F, 734F T L P 7 3 3 F OFFICE MACHINE. U n it in mm SW ITCHING POWER SUPPLY. The TOSHIBA TLP733F and TLP734F consists of a photo-transistor nnn optically coupled to a gallium arsenide infrared em ittin g diode in a six lead plastic DIP package.


    OCR Scan     		PDF TLP733F, TLP733F TLP734F TLP733 TLP734. UL1577, E67349 BS415 BS7002 EN60950) 74286 VDE0804

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    TRANSISTOR J 5804 NPN

    Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
    Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.


    OCR Scan     		PDF 2SC4885 SC-70 TRANSISTOR J 5804 NPN nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF

    2SA1734

    Abstract: 2SC4539 V 027
    Text: TOSHIBA 2SA1734 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 734 PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS Low Saturation Voltage : VCE (sat)= —0.5V (Max.) (IC = _700mA) High Speed Switching Time: tstg = 0.2/^s (Typ.)


    OCR Scan     		PDF 2SA1734 700mA) 2SC4539 2SA1734 2SC4539 V 027

    2N2646

    Abstract: transistor 2N2646 2n2646 pin 2N2646 PHILIPS MC8444 Unijunction transistor 2N2646 of 2N2646 pin configuration EB20
    Text: PHILIPS INTERNATIONAL Philips Semiconductors 2N2646 Data sheet status Preliminary specification date of issue December 1990 Silicon unijunction transistor QUICK R E F E R E N C E DATA PARAM ETER SYM BO L ~v EB2 emitter-base 2 voltage 'EM emitter current Pm


    OCR Scan     		PDF 2N2646 -TO-18 MB81S5 MSB031 MCB443 MC8444 /vV450 MSA119 transistor 2N2646 2n2646 pin 2N2646 PHILIPS Unijunction transistor 2N2646 of 2N2646 pin configuration EB20

    2SD1961

    Abstract: C45A
    Text: h 7 > y X $ / T ransistors 2SD1961 /2SD1962M/2SD2097/2SD2098 2SD1961/2SD1962M 2SD2097/2SD2098 NPN '> • ;= ! > Epitaxial Planar NPN Silicon Transistor • W f2\ti±E 3/D im ensio ns Unit: mm M,a n » oc /mv> • • iffiftlilfcJElte/Absolute Maximum Ratings (Ta=25°C)


    OCR Scan     		PDF 2SD1961 /2SD1962M/2SD2097/2SD2098 2SD1961/2SD1962M 2SD2097/2SD2098 2SD1961 2SD1962M 2SD2097 2SD2098 /2SD1962M/2SD209 C45A

    transistor 7S 732

    Abstract: K 192 A transistor
    Text: SIEMENS B C R 192 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R 1=22kii, R2=47kii Type Marking Ordering Code Pin Configuration B C R 192 W Ps 1=B Q62702-C2265 Package 2=E 3=C SOT-23


    OCR Scan     		PDF 22kii, 47kii) Q62702-C2265 OT-23 transistor 7S 732 K 192 A transistor

    2SC2340

    Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
    Text: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers


    OCR Scan     		PDF L427414 r-33-0S NE568 NE56800 operate-69 2SC2340 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor BUZ 205 • N channel • Enhancement mode • FREDFET Type Vos /d ^DS on Package 1> O rdering Code BUZ 205 400 V 6.0 A 1.0 £2 TO-220 AB C67078-A1401-A2 Maximum Ratings Parameter Symbol Values Continuous drain current, Tc = 35 "C


    OCR Scan     		PDF O-220 C67078-A1401-A2 535bDS fl235fc

    transistor A6A

    Abstract: TRANSISTOR 2SC 733 transistor A6A 5 v733 16VBE AC42C 2SC1893
    Text: 1893 2SC SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR Uni t in mm o * ? - y i' UTk^mtim ÿg&OMAX, Color TV Horizontal Output Applications o • iiEtti • teíD*ff^íS^ ; 21.0MAX. 3 v0BO= 1 5 0 0 V + ao9 v CE Bat = aov (Max.) (I0 =3 A , IH risigli ; X -i y


    OCR Scan     		PDF 2sc1893 AC42C transistor A6A TRANSISTOR 2SC 733 transistor A6A 5 v733 16VBE AC42C 2SC1893

    613 GB 123 CT

    Abstract: transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA803T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD /xPA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAW INGS (U n it: m m ) FEATURES • H igh fT


    OCR Scan     		PDF uPA803T /xPA803T 2SC4570) 613 GB 123 CT transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de

    NE32584C-T1

    Abstract: nec 3435 transistor am 4428
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.


    OCR Scan     		PDF NE32584C NE32584C-T1A NE32584C-T1 nec 3435 transistor am 4428

    2SC1424

    Abstract: MARKING Dt3 sot23 transistor 2SC2148 017 545 71 32 02 j60 mic mic J60 v3le 2SC202 2SC4185 NE734
    Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 5 0 0 M H z • HIGH GAIN: 15 dB a t 5 0 0 M H z • HIGH GAIN BANDWIDTH PRODUCT: 2 G H z 3 G H z for th e N E 7 3 4 3 5 • SMALL COLLECTOR CAPACITANCE: 1 p F


    OCR Scan     		PDF NE734 NE73435) NE73400) PACKAGEOUTUNE30 PACKAGEOUTUNE33 OT-23) PACKAGEOUTUNE33 PACKAGEOUTUNE39 OT-143) 2SC1424 MARKING Dt3 sot23 transistor 2SC2148 017 545 71 32 02 j60 mic mic J60 v3le 2SC202 2SC4185

    2SA561

    Abstract: 2SC734 2SA 561 transistor transistor 2SC734 transistor 2SA561 2SC734 Y JSW 70 Produced by Perfect Crystal Device Technology TRANSISTOR y9
    Text: 2s a 561 ^ u j y p N P x ^ 5> ^ p m ^ y ^ x s > p c T m SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS o O D riv e r S ta g e A m p lif ie r A p p lic a tio n s •  W - Ë E - r - t ; V c b o = - 50V • « IÎD * Œ x > 5 ^ ; Vc k ( e a t ) = 2SC734 t


    OCR Scan     		PDF 2sa561 2SC73tiay/ij 2SC734 S-150 --50flA 2SA561 2SC734 2SA 561 transistor transistor 2SC734 transistor 2SA561 2SC734 Y JSW 70 Produced by Perfect Crystal Device Technology TRANSISTOR y9