TRANSISTOR 7552 Search Results

TRANSISTOR 7552 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 7552 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
AGR18060EF Abstract: No abstract text available Text: Product Brief August 2003 AGR18060E 60 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for	Original	AGR18060E PB03-171RFPP PB03-105RFPP) AGR18060EF	PDF
gl 3201 Abstract: No abstract text available Text: Product Brief August 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for	Original	AGR18090E PB03-172RFPP PB03-090RFPP) gl 3201	PDF
J307 FET Abstract: AGR19180EF JESD22-A114 agere c8 Text: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19180EF Hz--1990 AGR19180EF DS04-080RFPP DS02-377RFPP) J307 FET JESD22-A114 agere c8	PDF
Untitled Abstract: No abstract text available Text: Preliminary Product Brief March 2003 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19125E AGR19125E AGR19125EU AGR19125EF IS-95/97 co-712-4106) PB03-069RFPP	PDF
Untitled Abstract: No abstract text available Text: Preliminary Product Brief May 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19030E Hz--1990 AGR19030EU AGR19030EF PB03-111RFPP PB03-092RFPP)	PDF
CDM 82 Abstract: No abstract text available Text: Preliminary Product Brief April 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal	Original	AGR19030E Hz--1990 AGR19030EU AGR19030EF PB03-092RFPP PB03-066RFPP) CDM 82	PDF
178rf Abstract: No abstract text available Text: Product Brief August 2003 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor	Original	AGR18125E PB03-178RFPP 178rf	PDF
AGERE Abstract: AGR18125E AGR18125EF AGR18125EU AGR18125XF AGR18125XU JESD22-C101A Text: Product Brief November 2003 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor	Original	AGR18125E AGR18125E PB04-012RFPP PB03-178RFPP) AGERE AGR18125EF AGR18125EU AGR18125XF AGR18125XU JESD22-C101A	PDF
Untitled Abstract: No abstract text available Text: Product Brief August 2003 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor	Original	AGR18125E AGR18125E a712-4106) PB03-178RFPP	PDF
AGR18125EF Abstract: AGR18125E AGR18125EU AGR18125XF AGR18125XU JESD22-C101A Text: Product Brief April 2004 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor	Original	AGR18125E AGR18125E PB04-078RFPP PB04-012RFPP) AGR18125EF AGR18125EU AGR18125XF AGR18125XU JESD22-C101A	PDF
transistor A114 Abstract: c101 TRANSISTOR transistor C101 AGR18060E AGR18060EF AGR18060EU JESD22-A114 Text: Preliminary Product Brief May 2003 AGR18060E 60 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for	Original	AGR18060E AGR18060E PB03-105RFPP PB03-064RFPP) transistor A114 c101 TRANSISTOR transistor C101 AGR18060EF AGR18060EU JESD22-A114	PDF
PB03-065RFPP Abstract: AGR18090EF c101 TRANSISTOR transistor A114 transistor C101 AGR18090EU JESD22-A114 AGR18090E PB03-090RFPP Text: Preliminary Product Brief April 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for	Original	AGR18090E AGR18090E PB03-090RFPP PB03-065RFPP) PB03-065RFPP AGR18090EF c101 TRANSISTOR transistor A114 transistor C101 AGR18090EU JESD22-A114 PB03-090RFPP	PDF
J307 FET Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386 Text: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19180EF Hz--1990 AGR19180EF DS04-162RFPP DS04-080RFPP) J307 FET JESD22-A114 c38 transistor j526 j451 J386	PDF
Untitled Abstract: No abstract text available Text: Preliminary Product Brief March 2003 AGR18060E 60 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for	Original	AGR18060E AGR18060E amplifie-712-4106) PB03-064RFPP	PDF

"RF Power Amplifier" Abstract: 100B100JCA500X AGR18060E AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-C101A 100B8R2JCA500X Text: Preliminary Data Sheet April 2004 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR18060E Hz--1880 AGR18060E AGR18060EU AGR18060EF DS04-156RFPP DS04-032RFPP) "RF Power Amplifier" 100B100JCA500X AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-C101A 100B8R2JCA500X	PDF
AGR18030EF Abstract: JESD22-C101A Text: Preliminary Data Sheet November 2004 AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF AGR18030EF DS04-204RFPP PB04-101RFPP) JESD22-C101A	PDF
J600 transistor Abstract: No abstract text available Text: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19045EF Hz--1990 DS04-240RFPP DS04-077RFPP) J600 transistor	PDF
Untitled Abstract: No abstract text available Text: Product Brief August 2003 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19045E is a 45 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19045E Hz--1990 AGR19045EU AGR19045EF PB03-173RFPP	PDF
6603 Shenzhen Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor Text: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19045E Hz--1990 AGR19045E DS04-077RFPP DS02-378RFPP) 6603 Shenzhen AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor	PDF
Z9 TRANSISTOR SMD Abstract: AGR18045E JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8 Text: Preliminary Data Sheet November 2004 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18045E AGR18045E DS03-186RFPP Z9 TRANSISTOR SMD JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR18060E Hz--1880 AGR18060EU AGR18060EF DS04-032RFPP DS02-325RFPP)	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet October 2003 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR18060E AGR18060E AGR18060EU AGR18060EF DS02-325RFPP	PDF
Untitled Abstract: No abstract text available Text: Product Brief August 2003 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030E PB03-170RFPP PB03-091RFPP)	PDF
Untitled Abstract: No abstract text available Text: Preliminary Product Brief April 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal	Original	AGR19060E Hz--1990 AGR19060EU AGR19060EF PB03-093RFPP PB03-067RFPP)	PDF

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TRANSISTOR 7552 Search Results

TRANSISTOR 7552 Result Highlights (5)

TRANSISTOR 7552 Datasheets Context Search

AGR18060EF

gl 3201

J307 FET

Untitled

Untitled

CDM 82

178rf

AGERE

Untitled

AGR18125EF

transistor A114

PB03-065RFPP

J307 FET

Untitled

"RF Power Amplifier"

AGR18030EF

J600 transistor

Untitled

6603 Shenzhen

Z9 TRANSISTOR SMD

Untitled

Untitled

Untitled

Untitled