BU806..807
Abstract: BU806 BU807
Text: BU806/807 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110°° CRT VIDEO DISPLAYS TO-220 BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS
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BU806/807
O-220
BU806
BU807
BU806..807
BU806
BU807
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bu806
Abstract: c25 diode to220 "Darlington Transistor" transistor Vbe 1 NPN Transistor 5A 400V BU807 transistor bu806 Darlington NPN Silicon Diode bu806 equivalent 330 transistor
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR BU806/807 FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CTR VIDEO DISPLAYS TO-220 BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS
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BU806/807
O-220
BU806
BU807
100mA,
bu806
c25 diode to220
"Darlington Transistor"
transistor Vbe 1
NPN Transistor 5A 400V
BU807
transistor bu806
Darlington NPN Silicon Diode
bu806 equivalent
330 transistor
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Untitled
Abstract: No abstract text available
Text: BU806/807 BU806/807 High Voltage & Fast Switching Darlington Transistor • Using In Horizontal Output Stages of 110°° Crt Video Displays • BUILT-IN SPEED-UP Diode Between Base and Emitter 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor
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BU806/807
O-220
BU806
BU807
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Untitled
Abstract: No abstract text available
Text: BU806/807 BU806/807 High Voltage & Fast Switching Darlington Transistor • Using In Horizontal Output Stages of 110°° Crt Video Displays • BUILT-IN SPEED-UP Diode Between Base and Emitter TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor
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BU806/807
O-220
BU806
BU807
BU807TU
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BU806
Abstract: BU806..807 BU807
Text: BU806/807 BU806/807 High Voltage & Fast Switching Darlington Transistor • Using In Horizontal Output Stages of 110°° Crt Video Displays • BUILT-IN SPEED-UP Diode Between Base and Emitter TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor
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BU806/807
O-220
BU806
BU807
BU806
BU806..807
BU807
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nec 2401 831
Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and
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2SC5010
2SC5010
nec 2401 831
nec 2401
2SC5010-T1
437 20000
marking 83
7749 transistor
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SOT23 JEDEC standard orientation pad size
Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is
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OT-223
PZT2222AT1
PZT2907AT1
inch/1000
PZT2907AT3
inch/4000
uni218A
MSC1621T1
SOT23 JEDEC standard orientation pad size
sot-23 npn marking code VD
BC237
p2f sot-23
transistor 2N5458
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882 transistor
Abstract: omni spectra sma transistor power rating 5w transistor 882 ATC100A mallory 25 uF capacitor data sheet PH2323-5 omni spectra fixture
Text: PH2323-5 CW Power Transistor 5W, 2.3 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • NPN silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Diffused emitter ballasting resistors
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PH2323-5
882 transistor
omni spectra sma
transistor power rating 5w
transistor 882
ATC100A
mallory 25 uF capacitor data sheet
PH2323-5
omni spectra fixture
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
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MRFE6VS25L
MRFE6VS25LR5
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bu806
Abstract: bu807 "Darlington Transistor"
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR BU806/807 FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CTR VIDEO DISPLAYS BUILT-IN SPEED -U P Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS
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BU806/807
BU806
BU807
300uS,
bu806
"Darlington Transistor"
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Untitled
Abstract: No abstract text available
Text: BU806/807 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS
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BU806/807
BU806
BU807
BU806
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bu806 equivalent
Abstract: transistor s07 using of damper in Horizontal Output Transistor bu807 equivalent BU806 "Darlington Transistor" damper diode darlington npn BU806..807 transistor bu806 BU807
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR BU806/807 FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS BUILT-IN SPEED -UP Diode Between Base and Em itter ABSOLUTE MAXIMUM RATINGS
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BU806/807
BU806
BU807
BU806
300ns,
bu806 equivalent
transistor s07
using of damper in Horizontal Output Transistor
bu807 equivalent
"Darlington Transistor"
damper diode darlington npn
BU806..807
transistor bu806
BU807
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bu806 equivalent
Abstract: bu806
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR BU806/807 FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS TO-220 BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS
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BU806/807
O-220
BU806
BU807
300nS,
bu806 equivalent
bu806
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR BU806/807 FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS TO-220 BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS Ta=25°C
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BU806/807
O-220
BU806
BU807
00201bS
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transistor 835
Abstract: Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649
Text: Philips Semiconductors Alphanumeric index Selection guide PAGE BC327; BC327A; BC328 Silicon planar epitaxial transistor 58 BC337; BC337A; BC338 Silicon planar epitaxial transistor 59 BC546; BC547; BC548 Silicon planar epitaxial transistor 60 BC556; BC557; BC558
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BC327;
BC327A;
BC328
BC337;
BC337A;
BC338
BC546;
BC547;
BC548
BC556;
transistor 835
Amplifier with transistor BC548
TRANSISTOR regulator
AUDIO Amplifier with transistor BC548
transistor 81 110 w 85
transistor 81 110 w 63
transistor
transistor 438
TRANSISTOR GUIDE
transistor 649
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK545-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.
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BUK545-100A/B
BUK545
-100A
-100B
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transistor NEC B 617
Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and
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2SC5010
2SC5010
transistor NEC B 617
nec 2035 744
zo 607 p 408
7749 transistor
ic 151 811
transistor 3568
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Automotive applications, Switched
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BUK555-60H
T0220AB
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PINNING-T0220AB
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope, The device is intended for use in Automotive applications, Switched
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BUK555-60H
PINNING-T0220AB
PINNING-T0220AB
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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ferroxcube wideband hf choke
Abstract: transistor 4312 BLW50F PHILIPS 4312 amplifier 4312 020 36640 Philips SSB vhf linear pulse power amplifier
Text: Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance
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BLW50F
OT123
BLW50F
ferroxcube wideband hf choke
transistor 4312
PHILIPS 4312 amplifier
4312 020 36640
Philips SSB
vhf linear pulse power amplifier
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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TI 9023 IC data
Abstract: 2SC4226 APPLICATION NOTES
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA81 OT HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4226 SMALL MINI MOLD The /xPA81 OT has built-in 2 low-voltage transistors which are designed to PACKAGE DRAW INGS
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uPA810T
2SC4226)
/xPA81
TI 9023 IC data
2SC4226 APPLICATION NOTES
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