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    TRANSISTOR 8080 Search Results

    TRANSISTOR 8080 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 8080 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8080-1G

    Abstract: 1G25 1g29 1g44 8080 transistor sockets 1G14 MIL-STD-12883 1G35 1g39
    Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 TO-3 Power Transistor Sockets 8080-1G Series 8080-1G7 FEATURES: PERFORMANCE SPECIFICATIONS: The 8080-1G family of TO-3 Power Transistor Sockets is used for both


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    PDF 8080-1G 8080-1G7 8080-1G44 8080-1G9 8080-1G25 8080-1G44 8080-1G36 8080-1G37 8080-1G38 1G25 1g29 1g44 8080 transistor sockets 1G14 MIL-STD-12883 1G35 1g39

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Advance Information Document Number: MC33927 Rev. 2.0, 8/2007 Three-Phase Field Effect Transistor Pre-Driver 33927 The 33927 is a Field Effect Transistor FET pre-driver designed for three-phase motor control and similar applications. The integrated


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    PDF MC33927

    54-PIN

    Abstract: ISO7637 MC33927 MUR120 3 phase alternator automatic voltage regulator 33927 339-27
    Text: Freescale Semiconductor Advance Information Document Number: MC33927 Rev. 2.0, 8/2007 Three-Phase Field Effect Transistor Pre-Driver 33927 The 33927 is a Field Effect Transistor FET pre-driver designed for three-phase motor control and similar applications. The integrated


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    PDF MC33927 54-PIN ISO7637 MC33927 MUR120 3 phase alternator automatic voltage regulator 33927 339-27

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information 1 1 Introduction The MBC13900 is a high performance transistor


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    PDF MBC13900/D MBC13900 OT-343) MBC13900 SC-70

    ATC100B4R7CT500XT

    Abstract: transistor j239 j239 transistor equivalent table c101 mosfet mttf A02TKLC MRF6V10250HSR3 A114 A115 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 0, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for


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    PDF MRF6V10250HS MRF6V10250HSR3 ATC100B4R7CT500XT transistor j239 j239 transistor equivalent table c101 mosfet mttf A02TKLC MRF6V10250HSR3 A114 A115 AN1955

    transistor 8080

    Abstract: 1g39
    Text: | | | Search Products Documentation Resources My Account Home > Products > By Type > Socket/Card Products Customer Support > Product Feature Selector > Product Details 8080 - 1G39 Product Details Quick Links Transistor Sockets and Adapters Not EU RoHS or ELV Compliant


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    2N3380

    Abstract: No abstract text available
    Text: 20STERNAVE SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 378-2902 (212) 227-8008 FAX: (973) 376-8080 U.SA 2N3380 P-CHANNEL DIFFUSED SILICON FIELD-EFFECT TRANSISTOR •ABSOLUTE MAXIMUM RATINGS Gate-Drain Voltage (Note 1) 30 V Gate-Source Voltage (Note 1) 30V «j


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    PDF 20STERNAVE 2N3380 2N3380

    ATC100B101JT500XT

    Abstract: T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22 MRFE6P3300HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P3300HR3 MRFE6P3300HR5 Designed for broadband commercial and industrial applications with


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    PDF MRFE6P3300H MRFE6P3300HR3 MRFE6P3300HR5 MRFE6P3300HR3 ATC100B101JT500XT T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: MHW7292AN Rev. 4, 3/2006 Freescale Semiconductor Technical Data Features • Specified for 110 - Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions Applications


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    PDF MHW7292AN MHW7292A.

    CTB110

    Abstract: MHW7292A XMD110
    Text: Freescale Semiconductor Technical Data MHW7292AN Rev. 4, 3/2006 Features • Specified for 110 - Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions Applications


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    PDF MHW7292AN MHW7292A. CTB110 MHW7292A XMD110

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MHW7292A CATV Amplifier Module LIFETIME BUY Features • Specified for 110 - Channel Loading. • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions


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    PDF MHW7292AN. MHW7292A MHW7292A

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MHW8272A CATV Amplifier Module LIFETIME BUY Features • Specified for 128 - Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions


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    PDF MHW8272AN. MHW8272A MHW8272A

    CTB128

    Abstract: MHW8272A MHW8272AN XMD128
    Text: Freescale Semiconductor Technical Data CATV Amplifier Module LIFETIME BUY Features • Specified for 128 - Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions Applications


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    PDF MHW8272A. MHW8272AN CTB128 MHW8272A MHW8272AN XMD128

    CTB110

    Abstract: MHW7292A XMD110
    Text: Freescale Semiconductor Technical Data CATV Amplifier Module LIFETIME BUY Features • Specified for 110 - Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions Applications


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    PDF MHW7292A. MHW7292AN CTB110 MHW7292A XMD110

    ATC100B151J

    Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.


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    PDF MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H ATC100B151J ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT

    TRANSISTOR 1G

    Abstract: No abstract text available
    Text: Catalog 1307612 4 M V IV * Specialty Sockets Revised 7-01 TO-3 Power Transistor Sockets 8080-1G Series PERFORMANCE SPECIFICATIONS: FEATURES: The 8080- 1G family of TO-3 Power Transistor Sockets is used for both small and large signal devices. Used in power supplies, power amplifiers,


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    PDF 8080-1G 8080-1G44 MIL-STD-202, TRANSISTOR 1G

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    2SK659

    Abstract: TC-6071
    Text: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #


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    PDF 2SK659 2SK659Ã 2SK659 TC-6071

    JE 800 transistor

    Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s
    Text: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )


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    PDF uPA76HA JE 800 transistor upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s

    Untitled

    Abstract: No abstract text available
    Text: 4SE » ISOCOn COMPONENTS LTD • T ^ -Ì5 4flflb510 0000312 3 « I S O MOC 8080X 1 »ff ft,'Uiußib^k kCB » I‘4~>'■ / 'f W V ”> \ ■^ ^ « " V * - ! . p ^ ^ .: 1! ' . J|^à^p ^ p .». MffVI ■ SlP ?M OPTICALLY COUPLED ISOLATOR DARLINGTON TRANSISTOR OUTPUT


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    PDF 4flflb510 8080X 8080X