8080-1G
Abstract: 1G25 1g29 1g44 8080 transistor sockets 1G14 MIL-STD-12883 1G35 1g39
Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 TO-3 Power Transistor Sockets 8080-1G Series 8080-1G7 FEATURES: PERFORMANCE SPECIFICATIONS: The 8080-1G family of TO-3 Power Transistor Sockets is used for both
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8080-1G
8080-1G7
8080-1G44
8080-1G9
8080-1G25
8080-1G44
8080-1G36
8080-1G37
8080-1G38
1G25
1g29
1g44
8080
transistor sockets
1G14
MIL-STD-12883
1G35
1g39
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Advance Information Document Number: MC33927 Rev. 2.0, 8/2007 Three-Phase Field Effect Transistor Pre-Driver 33927 The 33927 is a Field Effect Transistor FET pre-driver designed for three-phase motor control and similar applications. The integrated
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MC33927
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54-PIN
Abstract: ISO7637 MC33927 MUR120 3 phase alternator automatic voltage regulator 33927 339-27
Text: Freescale Semiconductor Advance Information Document Number: MC33927 Rev. 2.0, 8/2007 Three-Phase Field Effect Transistor Pre-Driver 33927 The 33927 is a Field Effect Transistor FET pre-driver designed for three-phase motor control and similar applications. The integrated
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MC33927
54-PIN
ISO7637
MC33927
MUR120
3 phase alternator automatic voltage regulator
33927
339-27
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information 1 1 Introduction The MBC13900 is a high performance transistor
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MBC13900/D
MBC13900
OT-343)
MBC13900
SC-70
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ATC100B4R7CT500XT
Abstract: transistor j239 j239 transistor equivalent table c101 mosfet mttf A02TKLC MRF6V10250HSR3 A114 A115 AN1955
Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 0, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for
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MRF6V10250HS
MRF6V10250HSR3
ATC100B4R7CT500XT
transistor j239
j239
transistor equivalent table c101
mosfet mttf
A02TKLC
MRF6V10250HSR3
A114
A115
AN1955
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transistor 8080
Abstract: 1g39
Text: | | | Search Products Documentation Resources My Account Home > Products > By Type > Socket/Card Products Customer Support > Product Feature Selector > Product Details 8080 - 1G39 Product Details Quick Links Transistor Sockets and Adapters Not EU RoHS or ELV Compliant
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2N3380
Abstract: No abstract text available
Text: 20STERNAVE SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 378-2902 (212) 227-8008 FAX: (973) 376-8080 U.SA 2N3380 P-CHANNEL DIFFUSED SILICON FIELD-EFFECT TRANSISTOR •ABSOLUTE MAXIMUM RATINGS Gate-Drain Voltage (Note 1) 30 V Gate-Source Voltage (Note 1) 30V «j
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20STERNAVE
2N3380
2N3380
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ATC100B101JT500XT
Abstract: T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22 MRFE6P3300HR3
Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P3300HR3 MRFE6P3300HR5 Designed for broadband commercial and industrial applications with
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MRFE6P3300H
MRFE6P3300HR3
MRFE6P3300HR5
MRFE6P3300HR3
ATC100B101JT500XT
T491C105K050AT
NIPPON CAPACITORS
dvbt
A114
A115
AN1955
C101
JESD22
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Untitled
Abstract: No abstract text available
Text: MHW7292AN Rev. 4, 3/2006 Freescale Semiconductor Technical Data Features • Specified for 110 - Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions Applications
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MHW7292AN
MHW7292A.
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CTB110
Abstract: MHW7292A XMD110
Text: Freescale Semiconductor Technical Data MHW7292AN Rev. 4, 3/2006 Features • Specified for 110 - Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions Applications
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MHW7292AN
MHW7292A.
CTB110
MHW7292A
XMD110
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MHW7292A CATV Amplifier Module LIFETIME BUY Features • Specified for 110 - Channel Loading. • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions
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MHW7292AN.
MHW7292A
MHW7292A
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MHW8272A CATV Amplifier Module LIFETIME BUY Features • Specified for 128 - Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions
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MHW8272AN.
MHW8272A
MHW8272A
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CTB128
Abstract: MHW8272A MHW8272AN XMD128
Text: Freescale Semiconductor Technical Data CATV Amplifier Module LIFETIME BUY Features • Specified for 128 - Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions Applications
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MHW8272A.
MHW8272AN
CTB128
MHW8272A
MHW8272AN
XMD128
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CTB110
Abstract: MHW7292A XMD110
Text: Freescale Semiconductor Technical Data CATV Amplifier Module LIFETIME BUY Features • Specified for 110 - Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions Applications
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MHW7292A.
MHW7292AN
CTB110
MHW7292A
XMD110
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ATC100B151J
Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT
Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.
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MRF6VP2600H
MRF6VP2600HR6
MRF6VP2600H
ATC100B151J
ATC100B101JT500XT
G2225X7R225KT3AB
ATC100B151JT500XT
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TRANSISTOR 1G
Abstract: No abstract text available
Text: Catalog 1307612 4 M V IV * Specialty Sockets Revised 7-01 TO-3 Power Transistor Sockets 8080-1G Series PERFORMANCE SPECIFICATIONS: FEATURES: The 8080- 1G family of TO-3 Power Transistor Sockets is used for both small and large signal devices. Used in power supplies, power amplifiers,
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8080-1G
8080-1G44
MIL-STD-202,
TRANSISTOR 1G
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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2SK659
Abstract: TC-6071
Text: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #
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2SK659
2SK659Ã
2SK659
TC-6071
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JE 800 transistor
Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s
Text: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )
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uPA76HA
JE 800 transistor
upa76
PA76HA
KJE transistor
pa76h
JE 33
KJE 17 transistor
B0188
361-s
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Untitled
Abstract: No abstract text available
Text: 4SE » ISOCOn COMPONENTS LTD • T ^ -Ì5 4flflb510 0000312 3 « I S O MOC 8080X 1 »ff ft,'Uiußib^k kCB » I‘4~>'■ / 'f W V ”> \ ■^ ^ « " V * - ! . p ^ ^ .: 1! ' . J|^à^p ^ p .». MffVI ■ SlP ?M OPTICALLY COUPLED ISOLATOR DARLINGTON TRANSISTOR OUTPUT
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4flflb510
8080X
8080X
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