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    TRANSISTOR 8080 Search Results

    TRANSISTOR 8080 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 8080 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    8080-1G

    Abstract: 1G25 1g29 1g44 8080 transistor sockets 1G14 MIL-STD-12883 1G35 1g39
    Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 TO-3 Power Transistor Sockets 8080-1G Series 8080-1G7 FEATURES: PERFORMANCE SPECIFICATIONS: The 8080-1G family of TO-3 Power Transistor Sockets is used for both


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    8080-1G 8080-1G7 8080-1G44 8080-1G9 8080-1G25 8080-1G44 8080-1G36 8080-1G37 8080-1G38 1G25 1g29 1g44 8080 transistor sockets 1G14 MIL-STD-12883 1G35 1g39 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Advance Information Document Number: MC33927 Rev. 2.0, 8/2007 Three-Phase Field Effect Transistor Pre-Driver 33927 The 33927 is a Field Effect Transistor FET pre-driver designed for three-phase motor control and similar applications. The integrated


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    MC33927 PDF

    54-PIN

    Abstract: ISO7637 MC33927 MUR120 3 phase alternator automatic voltage regulator 33927 339-27
    Text: Freescale Semiconductor Advance Information Document Number: MC33927 Rev. 2.0, 8/2007 Three-Phase Field Effect Transistor Pre-Driver 33927 The 33927 is a Field Effect Transistor FET pre-driver designed for three-phase motor control and similar applications. The integrated


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    MC33927 54-PIN ISO7637 MC33927 MUR120 3 phase alternator automatic voltage regulator 33927 339-27 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information 1 1 Introduction The MBC13900 is a high performance transistor


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    MBC13900/D MBC13900 OT-343) MBC13900 SC-70 PDF

    ATC100B4R7CT500XT

    Abstract: transistor j239 j239 transistor equivalent table c101 mosfet mttf A02TKLC MRF6V10250HSR3 A114 A115 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 0, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for


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    MRF6V10250HS MRF6V10250HSR3 ATC100B4R7CT500XT transistor j239 j239 transistor equivalent table c101 mosfet mttf A02TKLC MRF6V10250HSR3 A114 A115 AN1955 PDF

    transistor 8080

    Abstract: 1g39
    Text: | | | Search Products Documentation Resources My Account Home > Products > By Type > Socket/Card Products Customer Support > Product Feature Selector > Product Details 8080 - 1G39 Product Details Quick Links Transistor Sockets and Adapters Not EU RoHS or ELV Compliant


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    PDF

    2N3380

    Abstract: No abstract text available
    Text: 20STERNAVE SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 378-2902 (212) 227-8008 FAX: (973) 376-8080 U.SA 2N3380 P-CHANNEL DIFFUSED SILICON FIELD-EFFECT TRANSISTOR •ABSOLUTE MAXIMUM RATINGS Gate-Drain Voltage (Note 1) 30 V Gate-Source Voltage (Note 1) 30V «j


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    20STERNAVE 2N3380 2N3380 PDF

    ATC100B101JT500XT

    Abstract: T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22 MRFE6P3300HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P3300HR3 MRFE6P3300HR5 Designed for broadband commercial and industrial applications with


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    MRFE6P3300H MRFE6P3300HR3 MRFE6P3300HR5 MRFE6P3300HR3 ATC100B101JT500XT T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: MHW7292AN Rev. 4, 3/2006 Freescale Semiconductor Technical Data Features • Specified for 110 - Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions Applications


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    MHW7292AN MHW7292A. PDF

    CTB110

    Abstract: MHW7292A XMD110
    Text: Freescale Semiconductor Technical Data MHW7292AN Rev. 4, 3/2006 Features • Specified for 110 - Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions Applications


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    MHW7292AN MHW7292A. CTB110 MHW7292A XMD110 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MHW7292A CATV Amplifier Module LIFETIME BUY Features • Specified for 110 - Channel Loading. • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions


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    MHW7292AN. MHW7292A MHW7292A PDF

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MHW8272A CATV Amplifier Module LIFETIME BUY Features • Specified for 128 - Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions


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    MHW8272AN. MHW8272A MHW8272A PDF

    CTB128

    Abstract: MHW8272A MHW8272AN XMD128
    Text: Freescale Semiconductor Technical Data CATV Amplifier Module LIFETIME BUY Features • Specified for 128 - Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions Applications


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    MHW8272A. MHW8272AN CTB128 MHW8272A MHW8272AN XMD128 PDF

    CTB110

    Abstract: MHW7292A XMD110
    Text: Freescale Semiconductor Technical Data CATV Amplifier Module LIFETIME BUY Features • Specified for 110 - Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions Applications


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    MHW7292A. MHW7292AN CTB110 MHW7292A XMD110 PDF

    ATC100B151J

    Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.


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    MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H ATC100B151J ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT PDF

    TRANSISTOR 1G

    Abstract: No abstract text available
    Text: Catalog 1307612 4 M V IV * Specialty Sockets Revised 7-01 TO-3 Power Transistor Sockets 8080-1G Series PERFORMANCE SPECIFICATIONS: FEATURES: The 8080- 1G family of TO-3 Power Transistor Sockets is used for both small and large signal devices. Used in power supplies, power amplifiers,


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    8080-1G 8080-1G44 MIL-STD-202, TRANSISTOR 1G PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    2SK659

    Abstract: TC-6071
    Text: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #


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    2SK659 2SK659Ã 2SK659 TC-6071 PDF

    JE 800 transistor

    Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s
    Text: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )


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    uPA76HA JE 800 transistor upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s PDF

    Untitled

    Abstract: No abstract text available
    Text: 4SE » ISOCOn COMPONENTS LTD • T ^ -Ì5 4flflb510 0000312 3 « I S O MOC 8080X 1 »ff ft,'Uiußib^k kCB » I‘4~>'■ / 'f W V ”> \ ■^ ^ « " V * - ! . p ^ ^ .: 1! ' . J|^à^p ^ p .». MffVI ■ SlP ?M OPTICALLY COUPLED ISOLATOR DARLINGTON TRANSISTOR OUTPUT


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    4flflb510 8080X 8080X PDF