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    TRANSISTOR 80L Search Results

    TRANSISTOR 80L Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 80L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CB2203

    Abstract: Leroy Somer MFA56 180v dc motor speed controller MFA80VL CB2103 MFA63S MFA71L MFA80L ac motor inductance
    Text: Issued March 1997 232-3715 Data Pack B Data Sheet dc industrial electrical motors and gearboxes A dc motor and motor/gearbox range of totally enclosed, 2 poles, permanent magnet type, designed for use with thyristor or transistor drive for variable speed application.


    Original     		PDF

    IR2E67M

    Abstract: IR2E58U IRM053U7
    Text: Analog LED DRIVERS ☆New • LED Drivers • Built-in Step-up Circuit 1  Model No. Function PQ6CB11X1CP White LED driver for backlight (for small panels) PQ7L2020BP IR2E58U White LED driver for backlight IR2E65U ☆IR2E71Y product LED driver for backlight and call


    Original     		PDF PQ6CB11X1CP PQ7L2020BP IR2E58U IR2E65U IR2E71Y 64QAM IR2E67M IR2E58U IRM053U7

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: Afa Avionics Pulsed Power Transistor PH 1090-80L Preliminary 80 Watts, 1030-1090 MHz, 250 us Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation


    OCR Scan     		PDF 1090-80L

    NTD409

    Abstract: No abstract text available
    Text: NEC SILICON DARLINGTON POWER TRANSISTOR NTD409 ELECTRON DEVICE LOW FREQUENCY AMPLIFIER AND LOW SPEED SW ITC H IN G NPN SILICON EPITAXIAL MESA DARLINGTON TRANSISTOR Industrial Use DESCRIPTION Suitable for hummer driver, pulse motor driver and relay driver applications.


    OCR Scan     		PDF NTD409 NTD409

    2SC2756

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SC2756 VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC2756 is an NPN silicon e pita xial transistor intended fo r use as a V H F in m illim e te rs m ixer in a tu n e r o f a T V receiver. The device features are high conversion gain and lo w d is to rtio n .


    OCR Scan     		PDF 2SC2756 2SC2756 dBpV/50

    3SK131

    Abstract: 0580S
    Text: MOS FIELD EFFECT TRANSISTOR 3SK131 RF AM P. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES PACKAGE DIMENSIONS • Su itab le fo r use as R F a m p lifie r in V H F T V tuner. in millim eter* • L o w C rIS : 0 .0 5 p F T Y P .


    OCR Scan     		PDF 3SK131 3SK131 0580S

    TC518512

    Abstract: transistor D195
    Text: TOSHIBA TC518512PL/FL/FTL/rRL-70LV/80LV/10LV SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 w ords by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low pow er


    OCR Scan     		PDF TC518512PL/FL/FTL/rRL-70LV/80LV/10LV TheTC518512PL TC518512PL TC518512PL-LV D-194 TC518512PL/FL/FTL/TRL-70LV/80LV/1OLV D-195 TC518512 transistor D195

    Untitled

    Abstract: No abstract text available
    Text: BUZ76A Semiconductor Data Sheet October 1998 2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


    OCR Scan     		PDF BUZ76A TA17404.

    Untitled

    Abstract: No abstract text available
    Text: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		PDF IRF740 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier PD - 9 .1461C IRG4PC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF 1461C IRG4PC30U O-247AC O-247AC

    Untitled

    Abstract: No abstract text available
    Text: IRFP440 S e m iconductor Data Sheet July 1999 8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		PDF IRFP440 O-247

    Untitled

    Abstract: No abstract text available
    Text: 131,072 WORDS X 8 BIT CMOS PRELIMINARY PSEUDO STATIC RAM DESCRIPTION The TC518128A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518128A-LV Family utilizing one transistor dynamic memory’ cell with CMOS


    OCR Scan     		PDF TC518128A-LV TC518128A -10LV, -12LV 18128A L-80LV L-10LV

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 131,072 W ORDS X 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The 7C518129A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizing one transistor dynamic memory cel! with CMOS


    OCR Scan     		PDF 7C518129A-LV TC518129A-LV -12LV TC518129AFWL-80LV TC518129AFWL-10LV TC518129AFWL-12LV TC518129APL/AFL/AFWLâ -10LV,

    Untitled

    Abstract: No abstract text available
    Text: N EC ELECTRONICS INC 30E D L^27S55 0 02T77b b • T " .4 |-7 5 PHOTO INTERRUPTER PS4008 PHOTO INTERRUPTER DESCRIPTION PACKAGE DIMENSIONS The PS4008 photo coupled interrupter module containing a GaAs in millimeters inches light em itting diode and an NPN silicon photo-transistor,


    OCR Scan     		PDF 27S55 02T77b PS4008 PS4008 T-41-73

    20irj

    Abstract: EH25 0680L 2SA1934 2SC5176
    Text: TO SH IBA 2SA1934 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 934 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • Low Collector Saturation Voltage : VCE (sat)= - ° - 4V (Max.) at I q = - 3 A • High Speed Switching Time : tgtg^l.O/^s (Typ.)


    OCR Scan     		PDF 2SA1934 2SC5176 20irj EH25 0680L 2SA1934 2SC5176

    2SA1934

    Abstract: 2SC5176
    Text: TO SH IBA 2SA1934 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 934 (2SA1934) HIGH CURRENT SWITCHING APPLICATIONS Unit in mm DC-DC CONVERTER APPLICATIONS 10±0.2 101.2 • Low Collector Saturation Voltage : VCE (sat)= - ° - 4V (Max.) at I q = - 3 A


    OCR Scan     		PDF 2SA1934 2SA1934) 2SC5176 2SA1934 2SC5176

    TC518129AF-10

    Abstract: No abstract text available
    Text: 131,072 WORDS x 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518129A-LV Family is a 1M bit high-speed CMOS Pseudo-Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizes one transistor dynamic memory cell array with CMOS peripheral circuitry to achieve large capacity, high speed accesses, and low


    OCR Scan     		PDF TC518129A-LV TC518129APL/AFL-80LV TC518129APL/AFL-1OLV TC518129APL/AFL-12LV DIP32 TC518129APL TC518129AF-10

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 4 ÔE L06IC/NEH0RY •=10=17240 D G S 5 D 7 S D ■lit! 131,072 WORDS x 8 BIT CMOS PSEUDO STATIC RAM PRELIMINARY DESCRIPTION The TC518129A-LV Fam ily is a 1M bit high speed CMOS Pseudo Static RAM organized a s 131,072 w ords b y 8 bits. The TC518129A-LV fam ily utilizing one transistor dynamic m em ory cell w ith CMOS


    OCR Scan     		PDF L06IC/NEH0RY TC518129A-LV TC518129APL/AFL/AFWLâ -10LV, -12LV TC518129AFTL/ATRLâ

    S0426

    Abstract: 2SC417 2SC4177 F210 T460 T540 40yw 2181M 0427J TC6215
    Text: Silicon Transistor 2SC4177 f t ftw i t 7 "' -y K I C J B t L T o j g / J ' ^ ^ - r i ) ») , o2SA1611 t 3 >7° 'J / >9 m m f l t t . t. : mm) 2 . 1 + 0.1 U T-lfIfi-C'ë â i “o 1.25 ± 0 . 1 ohFE^SS^o hpE * 200 TY P . Vce = 6.0 V, Ic — 1.0 mA) o SiBEt>* ¡Ht'0


    OCR Scan     		PDF 2SC4177 o2SA1611 S0426 2SC417 2SC4177 F210 T460 T540 40yw 2181M 0427J TC6215

    V54C128

    Abstract: No abstract text available
    Text: gr VITELIC f V54C128 FAMILY HIGH PERFORMANCE, 128K x 8 BIT, PSEUDOSTA TIC, CMOS RAM ADVANCED 80/80L 10/10L 12/12L CE Access Time, tCEA 80 ns 100 ns 120 ns OE Access Time, (tQEA) 35 ns 40 ns 50 ns Min. Read-Write Cycle Time, (tRC) 130 ns 160 ns 190 ns HIGH PERFORMANCE V54C128


    OCR Scan     		PDF V54C128 80/80L V54C128 10/10L 12/12L 32-pin

    transistor D128

    Abstract: TC518129 D128 transistor transistor d133 ksh 200 TRANSISTOR equivalent TRANSISTOR 80l
    Text: TOSHIBA TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 TC518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. TheTC518129B utilizes


    OCR Scan     		PDF TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 C518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L TC518129B TheTC518129B D-132 TC518129BPL/BSPL/BFL/BFWL/BFTL-70/80/10 C518129BPL/BSPL/BFL/BFWL/BFTL-70L/80L/1OL D-133 transistor D128 TC518129 D128 transistor transistor d133 ksh 200 TRANSISTOR equivalent TRANSISTOR 80l

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 TC518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B utilizes


    OCR Scan     		PDF TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 C518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L TC518129B D-133

    TC518129

    Abstract: TC518129cpl transistor d155
    Text: TOSHIBA TC518129CPL/CFWL/CFTL-70/80/10 TC518129CPL/CFWL/CFTL-70L/80L/ 10L SILICON GATE CMOS p r e l im in a r y 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129C is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129C utilizes


    OCR Scan     		PDF TC518129CPL/CFWL/CFTL-70/80/10 TC518129CPL/CFWL/CFTL-70L/80L/ TC518129C TC518129CPL/CFWL/CFTL-70L/80L/1OL 1--L/08 D-157 TC518129 TC518129cpl transistor d155