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    TRANSISTOR 83F Search Results

    TRANSISTOR 83F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 83F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor tl 430 c

    Abstract: No abstract text available
    Text: , Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 BDY46 Silicon NPN Power Transistor usA DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 300V(Min.) • DC Current Gain: hFE=20(Min.)@lc = 2A • Collector-Emitter Saturation Voltage:V CE <sat)=1.5V(Max)@lc =


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    PDF BDY46 transistor tl 430 c

    transistor b 1238

    Abstract: 83ADJ
    Text: PJ1581/PJ1582/PJ1583 Dual Input Low Dropout Voltage Regulator T he PJ1581/PJ1582/PJ1583 family is a positive TO-220-5L adjustable and fixed voltage regulator developed to TO-263-5L provide 5A, 3A, 1.5A with Higher efficiency than currently available devices. All internal circuit is designed to operate


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    PDF PJ1581/PJ1582/PJ1583 O-220-5L O-263-5L 700mV 100mV PJ1581/PJ1582/PJ1583 O-263-5L transistor b 1238 83ADJ

    5AC312

    Abstract: ap-325 GAL programming Guide gal programming algorithm intel 28F256 adaptive algorithm AP-325, Guide to Flash Memory Reprogramming electric blanket 28F010 28F020
    Text: AP-325 APPLICATION NOTE Guide to First Generation Flash Memory Reprogramming APPLICATIONS ENGINEERING STAFF March 1994 Order Number 292059-002 Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in


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    PDF AP-325 5AC312 5AC312 ap-325 GAL programming Guide gal programming algorithm intel 28F256 adaptive algorithm AP-325, Guide to Flash Memory Reprogramming electric blanket 28F010 28F020

    A 69157 scr

    Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
    Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer


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    PDF 90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3

    PM55L-048

    Abstract: LW - 6052 Clock Display LED PM35L-048 PM35S-048 5 pin relay 12vdc 4088 UP 5035 LCD METER diagram wiring mitsubishi elevator digital dC Ammeter stu 4465 OMRON plc programming manual ZEN-10C1DR-D-V2
    Text: ND3% BASE1 XXXX7196-1888-1-P 1888 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 19-07-11 Hour: 11:01 TS:TS date TS time PANEL INSTRUMENTATION Find Datasheets Online ANALOG 2% CENTURY PANEL METERS ROUND AND RECTANGULAR PANEL METERS Attractive, easy-to-read meters in black


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    PDF 55F5412 55F5413 55F5252 55F5253 55F5254 55F5255 55F5256 55F5257 SCE016XD3SU2B SCE028LD3DP2B PM55L-048 LW - 6052 Clock Display LED PM35L-048 PM35S-048 5 pin relay 12vdc 4088 UP 5035 LCD METER diagram wiring mitsubishi elevator digital dC Ammeter stu 4465 OMRON plc programming manual ZEN-10C1DR-D-V2

    220v AC voltage stabilizer schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
    Text: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.


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    PDF Batte48 220v AC voltage stabilizer schematic diagram 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008

    A 69157 scr

    Abstract: HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41
    Text: ND3% BASE1 XXXX4641-1306-1-P 1306 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 14:59 TS:TS date TS time LEDS & ACCESSORIES Find Datasheets Online LED DESIGN KITS • THROUGH-HOLE LEDS POWER LINE DESIGNER KIT HIGH-INTENSITY LED LAMPS CONT. T- 13⁄4 (5mm)


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    PDF 74K5145 74K5144 74K5146 74K5147 74K5166 74K5170 71K0256 71K0273 71K0255 71K0272 A 69157 scr HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41

    80960JA

    Abstract: 80960JD 80960JF 272852 intel DOC
    Text: 80960JA/JF/JD SPECIFICATION UPDATE Release Date: July, 1996 Order Number: 272852-001 The 80960JA/JF/JD may contain design defects or errors known as errata. Characterized errata that may cause the 80960JA/JF/JD’s behavior to deviate from published specifications are


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    PDF 80960JA/JF/JD 80960JA/JF/JD Figure12-5 80960JA 80960JD 80960JF 272852 intel DOC

    STR750FVx

    Abstract: EN331 CAPACITOR 10uf 50v E2-5 mrc-C
    Text: STR750F ARM7TDMI-S 32-bit MCU with Flash, SMI, 3 std 16-bit timers, PWM timer, fast 10-bit ADC, I2C, UART, SSP, USB and CAN • Core – ARM7TDMI-S 32-bit RISC CPU – 54 DMIPS @ 60 MHz ■ Memories – Up to 256 KB Flash program memory 10k erase/write cycles, retention 20 yrs at


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    PDF STR750F 32-bit 16-bit 10-bit 16KBytes STR750FVx EN331 CAPACITOR 10uf 50v E2-5 mrc-C

    TRANSISTOR D400

    Abstract: LFBGA144 TQFP100 TQFP144
    Text: STR73xF ARM7TDMI 32-bit MCU with Flash, 3x CAN, 4 UARTs, 20 timers, ADC, 12 comm. interfaces • Core – ARM7TDMI 32-bit RISC CPU – 32 MIPS @ 36 MHz ■ Memories – Up to 256 Kbytes FLASH program memory 10,000 cycles endurance, data retention 20 years @ 85° C


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    PDF STR73xF 32-bit TQFP100 TQFP144 LFBGA144 32kHz TRANSISTOR D400 TQFP144

    TRANSISTOR D400

    Abstract: transistor D400 pin diagram application LFBGA144 diode 107 10K STR73x TQFP100 TQFP144 STR731FV0T6 STR730FZ1H6 K1153
    Text: STR73xF ARM7TDMI 32-bit MCU with Flash, 3x CAN, 4 UARTs, 20 timers, ADC, 12 comm. interfaces • Core – ARM7TDMI 32-bit RISC CPU – 32 MIPS @ 36 MHz ■ Memories – Up to 256 Kbytes FLASH program memory 10,000 cycles endurance, data retention 20 years @ 85° C


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    PDF STR73xF 32-bit TQFP100 TQFP144 LFBGA144 32kHz TRANSISTOR D400 transistor D400 pin diagram application diode 107 10K STR73x TQFP144 STR731FV0T6 STR730FZ1H6 K1153

    Untitled

    Abstract: No abstract text available
    Text: STR73xFxx ARM7TDMI 32-bit MCU with Flash, 3x CAN, 4 UARTs, 20 timers, ADC, 12 comm. interfaces Features • ■ ■ ■ ■ Core – ARM7TDMI 32-bit RISC CPU – 32 MIPS @ 36 MHz Memories – Up to 256 Kbytes Flash program memory 10,000 cycles endurance, data retention


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    PDF STR73xFxx 32-bit

    4202 BD TRANSISTOR datasheet

    Abstract: 4202 BD TRANSISTOR MKV440-D15 B25667C6167 B25667C3497A375 B44066D7025 h/h/TSM-HV200 health data sheet egypt
    Text: EPCOS Product Profile 2013 Power Factor Correction Power Quality Solutions www.epcos.com Contents Power Quality Solutions Preview PFC capacitor series overview PQS key components overview Important notes PFC capacitors ¼ PhaseCap Premium 230 … 800 V, 5.0 … 33 kvar


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    PDF BR604, BR6000, BR7000, BR7000-T, BR7000-I BR7000-SOFT MC7000-3 4202 BD TRANSISTOR datasheet 4202 BD TRANSISTOR MKV440-D15 B25667C6167 B25667C3497A375 B44066D7025 h/h/TSM-HV200 health data sheet egypt

    TRANSISTOR D400

    Abstract: LFBGA144 transistor D400 switch diagram application STR736FV1 eic 57 210 TQFP100 TQFP144 b1176 J324 St P211
    Text: STR73xFxx ARM7TDMI 32-bit MCU with Flash, 3x CAN, 4 UARTs, 20 timers, ADC, 12 comm. interfaces Features • ■ ■ ■ ■ Core – ARM7TDMI 32-bit RISC CPU – 32 MIPS @ 36 MHz Memories – Up to 256 Kbytes Flash program memory 10,000 cycles endurance, data retention


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    PDF STR73xFxx 32-bit TRANSISTOR D400 LFBGA144 transistor D400 switch diagram application STR736FV1 eic 57 210 TQFP100 TQFP144 b1176 J324 St P211

    UPD434000

    Abstract: CZ-70
    Text: NEC JUPD434000 524,288 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description The ¿JPD434000 is a 524,288-word by 8-bit static RAM fabricated with advanced silicon-gate technology. CMOS peripheral circuits and N-channel memory cells with thin-film transistor TFT loads make the


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    PDF uPD434000 JPD434000 288-word /PD434000 The/jPD43 15/uA JJPD434000 D434000 JUPD434000 CZ-70

    CTC 880 transistor

    Abstract: CTC 313 transistor 3 pin CTC 880 transistor GSM0102 CTC 313 transistor pin diagram T1L112 ctc 313 npn transistor
    Text: T O ñ H EW LETT’ m LEM PA CK A R D 4.8 V NPN Silicon Bipolar Common Em itter Transistor Technical Data AT-38086 Features • 4.8 Volt Pulsed pulse width = 577 usee, duty cycle = 12.5% /CW Operation 85 mil Plastic Surface Mount Package Outline 86 • +28 dBm Pulsed Pout


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    PDF AT-38086 AT-38086 CTC 880 transistor CTC 313 transistor 3 pin CTC 880 transistor GSM0102 CTC 313 transistor pin diagram T1L112 ctc 313 npn transistor

    UPD4216402

    Abstract: No abstract text available
    Text: SEC NEC Electronics Inc. pPD4216402, 4217402 4,194,304 x 4-Bit Dynamic CMOS RAM Advance Information Description The /JPD4216402 and the juPD4217402 are staticcolumn dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-voit


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    PDF uPD4216402 uPD4217402 /iPD4217402 PD4217402LE-60 LE-70 LE-80 LE-10 /PD4217402V-60 /iPD4217402G5-60 G5-70

    UPD4216402

    Abstract: No abstract text available
    Text: NEC pPD4216402, 4217402 4,194,304 X 4-Bit Dynamic CMOS RAM NEC Electronics Inc. Advance Information Description The /JPD4216402 and the /JPD4217402 are staticcolumn dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt


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    PDF uPD4216402 /JPD4217402

    upd434000

    Abstract: D434000GW-55L
    Text: NEC JUPD434000 524,288 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description 524,288-w ord by 8-bit organization Single + 5 -v o lt pow er supply Fully static o peration — no clock or refreshing T TL -com patible inputs and outputs Com m on I/O using three-state outputs


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    PDF uPD434000 /VPD434000 288-w /JPD434000 32-pin pPD434000 63FM-8622A JUPD434000 JHPD434000 D434000GW-55L

    VA140

    Abstract: No abstract text available
    Text: JJPD424102 4,194,304 X 1-Bit Dynamic CMOS RAM F l Mlí V NEC Electronics Inc. Pin Identification The pPD424102 is a static-column dynamic RAM orga­ nized as 4,194,304 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced polycide technology using trench capacitors mini­


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    PDF uPD424102 pPD424102 PD424102 JJPD424102 ffPD424102 fiPD424102 pPD424102 JPD424102 VA140

    Untitled

    Abstract: No abstract text available
    Text: five 10 1992 NEC JJPD434000 524,288 X 8-Bit Static CMOS RAM NEC Electronics Inc. Preliminary Description T he ^PD434000 is a 524,288-w ord by 8-bit static RAM fab ricated with advanced silicon-gate technology.


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    PDF JJPD434000 PD434000 288-w 32-pin

    83FM-6613A

    Abstract: No abstract text available
    Text: SEC NEC Electronics Inc. Description The /JPD424102 is a static-colum n dynam ic RAM orga­ nized as 4,194,304 words by 1 bit and designed to o p e ra te from a single + 5 -v o lt pow er supply. Advanced polycide technology using trench capacitors mini­ m izes silicon area and provides high s to ra g e cell c a ­


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    PDF uPD424102 63IH-6921B JUPD424102 83FM-6613A

    8676A

    Abstract: No abstract text available
    Text: NEC pPD424101 4,194,304 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description Pin Identification The ¿/PD424101 is a nibble-m ode dynam ic RAM orga­ nized as 4,194,304 words by 1 bit and designed to o perate from a single + 5 -v o lt power supply. Advanced


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    PDF uPD424101 /PD424101 JUPD424101 fiPD424101 5B-16 8676A

    Untitled

    Abstract: No abstract text available
    Text: CCT i f '9& fiPD 424102 4,194,304 x 1-Bit jW /X V * F ImJ W NEC Electronics Inc. Dynamic CMOS RAM Preliminary September Description Pin Identification The /L7PD424102 is a static-column dynamic RAM orga­


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    PDF /L7PD424102