transistor j02 527
Abstract: S822T S822TRW S822TW marking 822
Text: S822T/S822TW/S822TRW Vishay Semiconductors Silicon NPN Planar RF Transistor Observe precautions for handling. Electrostatic sensitive device. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features
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S822T/S822TW/S822TRW
S822T
S822TW
S822TRW
D-74025
20-Jan-99
transistor j02 527
marking 822
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S852T
Abstract: S852TW transistor d 945
Text: S852T/S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage
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S852T/S852TW
S852T
S852TW
D-74025
20-Jan-99
transistor d 945
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Untitled
Abstract: No abstract text available
Text: S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage
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S852T/S852TW
S852T
S852TW
D-74025
20-Jan-99
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S852T
Abstract: S852TW
Text: S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage
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S852T/S852TW
S852T
S852TW
D-74025
20-Jan-99
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PDF
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h11e
Abstract: transistor j02 527 S822T
Text: S822T/S822TW/S822TRW Vishay Telefunken Silicon NPN Planar RF Transistor Observe precautions for handling. Electrostatic sensitive device. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage
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Original
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S822T/S822TW/S822TRW
S822T
S822TW
S822TRW
D-74025
20-Jan-99
h11e
transistor j02 527
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PDF
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Untitled
Abstract: No abstract text available
Text: S822T/S822TW/S822TRW Vishay Telefunken Silicon NPN Planar RF Transistor Observe precautions for handling. Electrostatic sensitive device. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage
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Original
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S822T/S822TW/S822TRW
S822T
S822TW
S822TRW
34nges
D-74025
20-Jan-99
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PDF
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marking WS2 sot
Abstract: No abstract text available
Text: Not for new design, this product will be obsoleted soon S822T / S822TW / S822TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Comments SOT-143 Electrostatic sensitive device. Observe precautions for handling. 3 2 Features • • • • •
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S822T
S822TW
S822TRW
OT-143
OT-343
2002/95/EC
2002/96/EC
OT-343R
OT-143
marking WS2 sot
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TRANSISTOR w22
Abstract: S822T S822TRW S822TW
Text: S822T / S822TW / S822TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Comments SOT-143 Electrostatic sensitive device. Observe precautions for handling. 3 2 Features • • • • • • • 4 Low supply voltage Low current consumption e3
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S822T
S822TW
S822TRW
OT-143
2002/95/EC
2002/96/EC
OT-343
OT-343R
S822T
OT-143
TRANSISTOR w22
S822TRW
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S822T
Abstract: S822TRW S822TW TRANSISTOR w22
Text: S822T/S822TW/S822TRW Vishay Telefunken Silicon NPN Planar RF Transistor Observe precautions for handling. Electrostatic sensitive device. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage
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Original
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S822T/S822TW/S822TRW
S822T
S822TW
S822TRW
D-74025
20-Jan-99
TRANSISTOR w22
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transistor j02 527
Abstract: marking WS2 sot
Text: S822T / S822TW / S822TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Comments SOT-143 Electrostatic sensitive device. Observe precautions for handling. 3 2 Features • • • • • • • 4 Low supply voltage Low current consumption e3
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Original
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S822T
S822TW
S822TRW
OT-143
OT-343
2002/95/EC
2002/96/EC
OT-343R
OT-143
transistor j02 527
marking WS2 sot
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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TRANSISTOR 85050
Abstract: No abstract text available
Text: S822T / S822TW / S822TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Comments SOT-143 Electrostatic sensitive device. Observe precautions for handling. 3 2 Features • • • • • 4 Low supply voltage Low current consumption 50 Ω input impedance at 945 MHz
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S822T
S822TW
S822TRW
OT-143
OT-343
OT-343R
OT-143
OT-343
TRANSISTOR 85050
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Untitled
Abstract: No abstract text available
Text: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation: VCE (sat) = 0.14 V (max)
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TPCP8505
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TPCP8505
Abstract: BR 8505
Text: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 8 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max)
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TPCP8505
12oducts
TPCP8505
BR 8505
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toshiba ta 8505
Abstract: No abstract text available
Text: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 8 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max)
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TPCP8505
toshiba ta 8505
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PDF
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Untitled
Abstract: No abstract text available
Text: TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process TPCP8505 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation: VCE (sat) = 0.14 V (max)
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TPCP8505
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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OCR Scan
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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PDF
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8505N
Abstract: No abstract text available
Text: National t? S e m i c o n d u c t o r S eptem ber 1996 " A D VA N C E IN FO R M A TIO N N D H 8505N Dual N-Channel Enhancement M ode Field Effect Transistor General Description Features SuperSOT -8 N-Channel enhancem ent mode power field effect transistors are produced using
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OCR Scan
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8505N
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PDF
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lc 945 p transistor
Abstract: transistor 2 FC 945 VISHAY MARKING SJ transistor CB 945 lc 945 p transistor BU 184
Text: VfSMAY _ S822T/S822TW ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.
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OCR Scan
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S822T/S822TW
S822T
S822TW
20-Jan-99
lc 945 p transistor
transistor 2 FC 945
VISHAY MARKING SJ
transistor CB 945
lc 945 p
transistor BU 184
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PDF
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lc 945 p transistor
Abstract: No abstract text available
Text: _ S852T/S852TW VfSMAY ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.
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OCR Scan
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S852T/S852TW
S852T
S852TW
20-Jan-99
lc 945 p transistor
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PDF
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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OCR Scan
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PDF
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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OCR Scan
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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PDF
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Untitled
Abstract: No abstract text available
Text: Na l i o n a l s e m i c o n d u i- t o r S e p te m b e r 1 9 9 6 ADVANC E IN FO R M A TIO N N D H 8505N Dual N-Channel Enhancement Mode Field Effect Transistor Features General Description SuperS0T™-8 N-Channel enhancement mode power field effect transistors are produced using
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OCR Scan
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8505N
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PDF
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Untitled
Abstract: No abstract text available
Text: National September 1996 Semiconductor” A D VA N C E IN FO R M A TIO N NDH8505N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOT -8 N-Channel enhancem ent mode power field effect transistors are produced using
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OCR Scan
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NDH8505N
300ps,
NDH8505N
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PDF
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