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    TRANSISTOR 8507 Search Results

    TRANSISTOR 8507 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 8507 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BFG67 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave


    Original     		PDF BFG67 BFG67 D-74025 11-Nov-99

    Untitled

    Abstract: No abstract text available
    Text: BFG67 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave


    Original     		PDF BFG67 BFG67 D-74025 11-Nov-99

    Untitled

    Abstract: No abstract text available
    Text: BFG67 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave


    Original     		PDF BFG67 BFG67 D-74025 11-Nov-99

    BFG67

    Abstract: 2 GHz ic marking v3
    Text: BFG67 Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave


    Original     		PDF BFG67 BFG67 D-74025 11-Nov-99 2 GHz ic marking v3

    silicon npn planar rf transistor sot 143

    Abstract: BFG67 2 GHz ic
    Text: BFG67 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave


    Original     		PDF BFG67 BFG67 D-74025 11-Nov-99 silicon npn planar rf transistor sot 143 2 GHz ic

    marking V3

    Abstract: No abstract text available
    Text: BFG67 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 2 1 • Small feedback capacitance • Low noise figure • High transition frequency 4 3 Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated


    Original     		PDF BFG67 OT-143 D-74025 23-Aug-04 marking V3

    BFG92A

    Abstract: transistor marking P8
    Text: BFG92A Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure


    Original     		PDF BFG92A BFG92A D-74025 11-Nov-99 transistor marking P8

    FET 4900

    Abstract: CP CLARE 4367 MOS FET SOT-223 MOS FET SOT-223 ON CPC5602C CPC5602CTR CPC5604A CPC5610A CPC5611A
    Text: CPC5602C N Channel Depletion Mode FET Description The CPC5602C is an “N” channel depletion mode Field Effect Transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage


    Original     		PDF CPC5602C CPC5602C OT-223 DS-CPC5602C-Rev. FET 4900 CP CLARE 4367 MOS FET SOT-223 MOS FET SOT-223 ON CPC5602CTR CPC5604A CPC5610A CPC5611A

    BFG93A

    Abstract: marking r8
    Text: BFG93A Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 1 13 579


    Original     		PDF BFG93A BFG93A 50mprove D-74025 11-Nov-99 marking r8

    sot23 marking zs

    Abstract: No abstract text available
    Text: BFR193T / BFR193TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 1 • Low noise figure • High transition frequency fT = 8 GHz • Excellent large-signal behaviour 3 2 Applications 1 For low-noise, high-gain applications such as power


    Original     		PDF BFR193T BFR193TW OT-23 BFR193TW OT-323 D-74025 24-Aug-04 sot23 marking zs

    Untitled

    Abstract: No abstract text available
    Text: BFG92A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency


    Original     		PDF BFG92A BFG92A D-74025 11-Nov-99

    Untitled

    Abstract: No abstract text available
    Text: BFG93A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 1 13 579 94 9279


    Original     		PDF BFG93A BFG93A D-74025 11-Nov-99

    Untitled

    Abstract: No abstract text available
    Text: BFG93A VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 2 1 • High power gain • Low noise figure • High transition frequency 4 3 Applications RF amplifier up to GHz range. Electrostatic sensitive device. Observe precautions for handling.


    Original     		PDF BFG93A OT-143 D-74025 23-Aug-04

    transistor marking P8

    Abstract: silicon npn planar rf transistor sot 143 BFG92A
    Text: BFG92A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency


    Original     		PDF BFG92A BFG92A D-74025 11-Nov-99 transistor marking P8 silicon npn planar rf transistor sot 143

    Untitled

    Abstract: No abstract text available
    Text: BFG92A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency


    Original     		PDF BFG92A BFG92A D-74025 11-Nov-99

    Untitled

    Abstract: No abstract text available
    Text: BFG93A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 1 13 579 94 9279


    Original     		PDF BFG93A BFG93A D-74025 11-Nov-99

    Untitled

    Abstract: No abstract text available
    Text: BFG92A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency


    Original     		PDF BFG92A BFG92A D-74025 11-Nov-99

    silicon npn planar rf transistor sot 143

    Abstract: sot-143 vishay telefunken BFG93A
    Text: BFG93A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 1 13 579 94 9279


    Original     		PDF BFG93A BFG93A 20design D-74025 11-Nov-99 silicon npn planar rf transistor sot 143 sot-143 vishay telefunken

    TPCP8507

    Abstract: No abstract text available
    Text: TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications Unit: mm DC/DC Converters 0.33±0.05 0.05 M A High DC current gain: hFE = 120～300 IC = 0.1 A • Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max)


    Original     		PDF TPCP8507 TPCP8507

    Untitled

    Abstract: No abstract text available
    Text: TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications Unit: mm DC/DC Converters 0.33±0.05 0.05 M A High DC current gain: hFE = 120~300 IC = 0.1 A • Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max)


    Original     		PDF TPCP8507

    Untitled

    Abstract: No abstract text available
    Text: BFR193T / BFR193TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Low noise figure High transition frequency fT = 8 GHz e3 Excellent large-signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BFR193T BFR193TW 2002/95/EC 2002/96/EC OT-23 BFR193TW OT-323 D-74025 28-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: National t? S e m i c o n d u c t o r S eptem ber 1996 " A D VA N C E IN FO R M A TIO N N D H 8507N Dual N-Channel Enhancement M ode Field Effect Transistor General Description Features SuperSOT -8 N-Channel enhancem ent mode power field effect transistors are produced using


    OCR Scan     		PDF 8507N

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    Untitled

    Abstract: No abstract text available
    Text: Na l i o n al s e m i c o n d u i- t o r S e p te m b e r 1 9 9 6 ADVANC E IN FO R M A TIO N N D H 8507N Dual N-Channel Enhancement Mode Field Effect Transistor Features General Description SuperS0T™-8 N-Channel enhancement mode power field effect transistors are produced using


    OCR Scan     		PDF 8507N 0025in_ 300ps,