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    TRANSISTOR 8522 Search Results

    TRANSISTOR 8522 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 8522 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    tip122 tip127 audio board

    Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
    Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents


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    Power247TM, tip122 tip127 audio board BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920 PDF

    TRANSISTORS BJT bc548

    Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
    Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002


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    OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302 PDF

    JLN 2003

    Abstract: 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR
    Text: PreliminaryData Sheet 2SC4226 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.


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    2SC4226 R09DS0022EJ0200 2SC4226 S21e2 2SC4226-A 2SC4226-T1 JLN 2003 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR PDF

    2SA1646

    Abstract: No abstract text available
    Text: Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Silicon Power Transistor Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-toemitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,


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    2SA1646 2SA1646-Z R07DS0048EJ0200 PDF

    2SA1646

    Abstract: 2SA1646-Z NEW TRANSISTOR
    Text: Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Silicon Power Transistor Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-toemitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,


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    2SA1646 2SA1646-Z R07DS0048EJ0200 2SA1646-Z NEW TRANSISTOR PDF

    IN5817 schottky diode symbol

    Abstract: 1N5817 595D IN5817 MA737 TC120 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222
    Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


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    TC120 600mA 300kHz TC120503EHA TC120 system420 D-81739 DS21365B-page IN5817 schottky diode symbol 1N5817 595D IN5817 MA737 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222 PDF

    marking sop-12

    Abstract: 2N2222 TRANSISTOR TOSHIBA
    Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


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    TC120 600mA 300kHz TC120 combinatio778-366 DS21365C-page marking sop-12 2N2222 TRANSISTOR TOSHIBA PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP180N055TUJ R07DS0181EJ0100 Rev.1.00 Dec 22, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance


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    NP180N055TUJ R07DS0181EJ0100 NP180N055TUJ AEC-Q101 NP180N055TUJ-E1-AY NP180N055TUJ-E2-AY O-263-7pin, PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP160N055TUJ R07DS0022EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance


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    NP160N055TUJ R07DS0022EJ0100 NP160N055TUJ AEC-Q101 O-263-7pin, PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP160N055TUJ R07DS0022EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance


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    NP160N055TUJ R07DS0022EJ0100 NP160N055TUJ AEC-Q101 O-263-7pin, PDF

    NP180N055

    Abstract: NP180N055TUJ
    Text: Preliminary Data Sheet NP180N055TUJ R07DS0181EJ0100 Rev.1.00 Dec 22, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance


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    NP180N055TUJ R07DS0181EJ0100 NP180N055TUJ AEC-Q101 NP180N055TUJ-E1-AY NP180N055TUJ-E2-AY O-263-7pin, NP180N055 PDF

    NP180N04TUJ

    Abstract: TO-263-7pin
    Text: Preliminary Data Sheet NP180N04TUJ R07DS0180EJ0100 Rev.1.00 Dec 17, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance


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    NP180N04TUJ R07DS0180EJ0100 NP180N04TUJ AEC-Q101 O-263-7pin, TO-263-7pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP33N075YDF R07DS0363EJ0100 Rev.1.00 Jun 30, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP33N075YDF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance


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    NP33N075YDF R07DS0363EJ0100 NP33N075YDF AEC-Q101 NP33N075YDF-E1-AY NP33N075YDF-E2-AY PDF

    NP160N04TUJ

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance


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    NP160N04TUJ R07DS0021EJ0100 NP160N04TUJ AEC-Q101 O-263-7pin, PDF

    NP109N04PUK

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP109N04PUK R07DS0544EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance


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    NP109N04PUK R07DS0544EJ0100 NP109N04PUK AEC-Q101 NP109N04PUK-E1-AY NP109N04PUK-E2-AY 800p/reel O-263 MP-25ZP) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP160N04TUK R07DS0543EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance


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    NP160N04TUK R07DS0543EJ0100 NP160N04TUK AEC-Q101 NP160N04TUK-E1-AY NP160N04TUK-E2-AY O-263-7pin MP-25ZT) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP50P04SLG R07DS0241EJ0100 Rev.1.00 Feb 09, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance


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    NP50P04SLG R07DS0241EJ0100 NP50P04SLG NP50P04SLG-E1-AY NP50P04SLG-E2-AY O-252 Item9044 PDF

    NP55N04SLG

    Abstract: NP55N04SLG-E2-AY NP55N04SLG-E1-AY
    Text: Preliminary Data Sheet NP55N04SLG R07DS0242EJ0100 Rev.1.00 Feb 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Channel temperature 175 degree rating


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    NP55N04SLG R07DS0242EJ0100 NP55N04SLG NP55N04SLG-E1-AY NP55N04SLG-E2-AY O-252 NP55N04SLG-E2-AY NP55N04SLG-E1-AY PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP89N04PUK R07DS0562EJ0100 Rev.1.00 Nov 07, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance


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    NP89N04PUK R07DS0562EJ0100 NP89N04PUK AEC-Q101 NP89N04PUK-E1-AY NP89N04PUK-E2-AY O-263 MP-25ZP) PDF

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR/TO SOCKETS TO SERIES TO-3 Power Transistor Sockets SPECIFY TO-3 PART NUMBER FROM THE CHART BELOW Quality sockets simplify transistor mounting, uses chassis as a heat sink. Integral mounting saddle is tapped for 6-32 NC screws. Body will not crack/chip during handling


    OCR Scan
    O-340-T O-340-G O-34O0-T T0-360-T 852-26904858-Fax: PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MSD42WT1/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information MSD42WT1 NPN Silicon General Purpose High Voltage Transistor Motorola Preferred Devices This NPN Silicon Planar Transistor is designed for general purpose amplifier


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    MSD42WT1/D MSD42WT1 SC-70/SOT-323 7-inch/3000 OUCHTONE1-602-244-6609 b3b7255 PDF

    B0159

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by B0159/0 SEMICONDUCTOR TECHNICAL DATA ESDI 59 Plastic Medium Power NPN Silicon Transistor . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTOR


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    B0159/0 BD159/D B0159 PDF

    h2d transistor

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MSB92W T1/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information MSB92WT1 PN P Silicon General Purpose High Voltage Transistor Motorola Preferred Devices This PNP Silicon Planar Transistor is designed for general purpose amplifier


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    MSB92W MSB92WT1 SC-70/SOT-323 7-inch/3000 OUCHTONE1-602-244-6609 MSB92WT1/D h2d transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BF721T1/D SEMICONDUCTOR TECHNICAL DATA BF721T1 PNP Silicon Transistor Motorola Preferred Device COLLECTOR 2,4 PNP SILICON TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage Rating


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    BF721T1/D BF721T1 PDF