tip122 tip127 audio board
Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents
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Power247TM,
tip122 tip127 audio board
BUK 450-1000
Transistor Selection Guide
tip122 tip127 audio amp
FJL6920 equivalent
car amp
TIP41/TIP42
kse13009
TRANSISTOR TIP31
FJL6920
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TRANSISTORS BJT bc548
Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002
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OT-623F
OT-323
OT-23
OT-89
OT-223
O-92S
O-226AE
O-92L
TRANSISTORS BJT bc548
jfet selection guide
J210 D2 PAK
PN4302
TN2102A
BJT BC546
FJN965
MPF102 JFET data sheet
KSP13
ks3302
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JLN 2003
Abstract: 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR
Text: PreliminaryData Sheet 2SC4226 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
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2SC4226
R09DS0022EJ0200
2SC4226
S21e2
2SC4226-A
2SC4226-T1
JLN 2003
2SC4226 APPLICATION NOTES
newmarket transistor
2SC4226-T1
2SC4226-T1-A
2SC4226-A
Korea Electronics TRANSISTOR
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2SA1646
Abstract: No abstract text available
Text: Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Silicon Power Transistor Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-toemitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,
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2SA1646
2SA1646-Z
R07DS0048EJ0200
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2SA1646
Abstract: 2SA1646-Z NEW TRANSISTOR
Text: Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Silicon Power Transistor Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-toemitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,
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2SA1646
2SA1646-Z
R07DS0048EJ0200
2SA1646-Z
NEW TRANSISTOR
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IN5817 schottky diode symbol
Abstract: 1N5817 595D IN5817 MA737 TC120 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222
Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small
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TC120
600mA
300kHz
TC120503EHA
TC120
system420
D-81739
DS21365B-page
IN5817 schottky diode symbol
1N5817
595D
IN5817
MA737
TC120303EHA
TC120333EHA
TC120503EHA
equivalent components for transistor 2N2222
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PDF
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marking sop-12
Abstract: 2N2222 TRANSISTOR TOSHIBA
Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small
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TC120
600mA
300kHz
TC120
combinatio778-366
DS21365C-page
marking sop-12
2N2222 TRANSISTOR TOSHIBA
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NP180N055TUJ R07DS0181EJ0100 Rev.1.00 Dec 22, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance
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NP180N055TUJ
R07DS0181EJ0100
NP180N055TUJ
AEC-Q101
NP180N055TUJ-E1-AY
NP180N055TUJ-E2-AY
O-263-7pin,
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NP160N055TUJ R07DS0022EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance
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NP160N055TUJ
R07DS0022EJ0100
NP160N055TUJ
AEC-Q101
O-263-7pin,
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NP160N055TUJ R07DS0022EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance
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NP160N055TUJ
R07DS0022EJ0100
NP160N055TUJ
AEC-Q101
O-263-7pin,
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NP180N055
Abstract: NP180N055TUJ
Text: Preliminary Data Sheet NP180N055TUJ R07DS0181EJ0100 Rev.1.00 Dec 22, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance
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NP180N055TUJ
R07DS0181EJ0100
NP180N055TUJ
AEC-Q101
NP180N055TUJ-E1-AY
NP180N055TUJ-E2-AY
O-263-7pin,
NP180N055
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NP180N04TUJ
Abstract: TO-263-7pin
Text: Preliminary Data Sheet NP180N04TUJ R07DS0180EJ0100 Rev.1.00 Dec 17, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance
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NP180N04TUJ
R07DS0180EJ0100
NP180N04TUJ
AEC-Q101
O-263-7pin,
TO-263-7pin
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NP33N075YDF R07DS0363EJ0100 Rev.1.00 Jun 30, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP33N075YDF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance
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NP33N075YDF
R07DS0363EJ0100
NP33N075YDF
AEC-Q101
NP33N075YDF-E1-AY
NP33N075YDF-E2-AY
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NP160N04TUJ
Abstract: No abstract text available
Text: Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance
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NP160N04TUJ
R07DS0021EJ0100
NP160N04TUJ
AEC-Q101
O-263-7pin,
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NP109N04PUK
Abstract: No abstract text available
Text: Preliminary Data Sheet NP109N04PUK R07DS0544EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance
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NP109N04PUK
R07DS0544EJ0100
NP109N04PUK
AEC-Q101
NP109N04PUK-E1-AY
NP109N04PUK-E2-AY
800p/reel
O-263
MP-25ZP)
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NP160N04TUK R07DS0543EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance
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NP160N04TUK
R07DS0543EJ0100
NP160N04TUK
AEC-Q101
NP160N04TUK-E1-AY
NP160N04TUK-E2-AY
O-263-7pin
MP-25ZT)
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NP50P04SLG R07DS0241EJ0100 Rev.1.00 Feb 09, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance
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NP50P04SLG
R07DS0241EJ0100
NP50P04SLG
NP50P04SLG-E1-AY
NP50P04SLG-E2-AY
O-252
Item9044
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NP55N04SLG
Abstract: NP55N04SLG-E2-AY NP55N04SLG-E1-AY
Text: Preliminary Data Sheet NP55N04SLG R07DS0242EJ0100 Rev.1.00 Feb 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Channel temperature 175 degree rating
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NP55N04SLG
R07DS0242EJ0100
NP55N04SLG
NP55N04SLG-E1-AY
NP55N04SLG-E2-AY
O-252
NP55N04SLG-E2-AY
NP55N04SLG-E1-AY
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NP89N04PUK R07DS0562EJ0100 Rev.1.00 Nov 07, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance
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NP89N04PUK
R07DS0562EJ0100
NP89N04PUK
AEC-Q101
NP89N04PUK-E1-AY
NP89N04PUK-E2-AY
O-263
MP-25ZP)
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR/TO SOCKETS TO SERIES TO-3 Power Transistor Sockets SPECIFY TO-3 PART NUMBER FROM THE CHART BELOW Quality sockets simplify transistor mounting, uses chassis as a heat sink. Integral mounting saddle is tapped for 6-32 NC screws. Body will not crack/chip during handling
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OCR Scan
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O-340-T
O-340-G
O-34O0-T
T0-360-T
852-26904858-Fax:
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MSD42WT1/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information MSD42WT1 NPN Silicon General Purpose High Voltage Transistor Motorola Preferred Devices This NPN Silicon Planar Transistor is designed for general purpose amplifier
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OCR Scan
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MSD42WT1/D
MSD42WT1
SC-70/SOT-323
7-inch/3000
OUCHTONE1-602-244-6609
b3b7255
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PDF
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B0159
Abstract: No abstract text available
Text: MOTOROLA Order this document by B0159/0 SEMICONDUCTOR TECHNICAL DATA ESDI 59 Plastic Medium Power NPN Silicon Transistor . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTOR
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OCR Scan
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B0159/0
BD159/D
B0159
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PDF
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h2d transistor
Abstract: No abstract text available
Text: MOTOROLA Order this document by MSB92W T1/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information MSB92WT1 PN P Silicon General Purpose High Voltage Transistor Motorola Preferred Devices This PNP Silicon Planar Transistor is designed for general purpose amplifier
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OCR Scan
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MSB92W
MSB92WT1
SC-70/SOT-323
7-inch/3000
OUCHTONE1-602-244-6609
MSB92WT1/D
h2d transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BF721T1/D SEMICONDUCTOR TECHNICAL DATA BF721T1 PNP Silicon Transistor Motorola Preferred Device COLLECTOR 2,4 PNP SILICON TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage Rating
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OCR Scan
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BF721T1/D
BF721T1
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PDF
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