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    TRANSISTOR 86 Y Search Results

    TRANSISTOR 86 Y Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 86 Y Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC1008

    Abstract: No abstract text available
    Text: 东莞市华远电子有限公 司 DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR（NPN ） TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.8 W（Tamb=25℃）


    Original     		PDF 2SC1008 O--92 270TYP 050TYP 2SC1008

    2SA1235A

    Abstract: 0F1M
    Text: 东莞市华远电子有限公 司 DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 SOT-23 Plastic-Encapsulate Transistors SOT—23 2SA1235A TRANSISTOR（ PNP ） 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES


    Original     		PDF OT-23 OT--23 2SA1235A 037TPY 950TPY 550REF 022REF 2SA1235A 0F1M

    Untitled

    Abstract: No abstract text available
    Text: Agilent AT-41586 Low Cost General Purpose Transistors Data Sheet Features The AT-41586 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface protection. 86 Plastic Package


    Original     		PDF AT-41586 AT41586 5965-8908E 5989-2651EN

    MAX713 equivalent

    Abstract: MAX713 15V-to-40V MAX726 pnp transistor OP AMP 5A OUTPUT "Switching Regulator" npn switching transistor Ic 5A PWM SWITCH MODE AN86
    Text: Maxim > App Notes > BATTERY MANAGEMENT Keywords: Switch-Mode Battery Charger Delivers 5A Jul 09, 1998 APPLICATION NOTE 86 Switch-Mode Battery Charger Delivers 5A The fast-charge controller IC3 Figure 1 normally directs current to the battery via an external pnp transistor.


    Original     		PDF com/an86 MAX713: APP86, Appnote86, MAX713 equivalent MAX713 15V-to-40V MAX726 pnp transistor OP AMP 5A OUTPUT "Switching Regulator" npn switching transistor Ic 5A PWM SWITCH MODE AN86

    an5296

    Abstract: AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 FN532 CA30
    Text: CA3146, CA3146A, CA3183, CA3183A T O DU C T TE PR E O DU C L R O P S E T OB U 3 BSTIT , CData 308Sheet LE SU 86 A POSSIB 3046, CA30 CA May 2001 FN532.6 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a


    Original     		PDF CA3146, CA3146A, CA3183, CA3183A FN532 CA3183A, CA3183 CA3146A an5296 AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 CA30

    STM6967

    Abstract: No abstract text available
    Text: Green Product STM6967 S a mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 86 @ VGS=-10V -60V


    Original     		PDF STM6967 STM6967

    K60A08J

    Abstract: TK60A08J1
    Text: TK60A08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ TK60A08J1 Switching Regulator Application • Unit: mm High-Speed switching • Small gate charge: Qg = 86 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.)


    Original     		PDF TK60A08J1 K60A08J TK60A08J1

    TK60D08J1

    Abstract: No abstract text available
    Text: TK60D08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ TK60D08J1 Switching Regulator Application • Unit: mm High-Speed switching • Small gate charge: Qg = 86 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.)


    Original     		PDF TK60D08J1 TK60D08J1

    Untitled

    Abstract: No abstract text available
    Text: 4.8 V NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38086 Features • 4.8 Volt Pulsed pulse width = 577 µsec, duty cycle = 12.5% /CW Operation 85 mil Plastic Surface Mount Package Outline 86 • +28 dBm Pulsed Pout @ 900 MHz, Typ. • +23.5 dBm CW Pout


    Original     		PDF AT-38086 AT-38086 5965-5959E 5966-3835E

    2N 326 Transistor

    Abstract: transistor ESM 3004 DARLINGTON ESM 30 npn 1000V 100a ESM4016 ESM 3004 transistor BU 184 transistor ESM 3001 transistor ESM 2060T darlington NPN 600V 8a transistor
    Text: SUPERSWITCH high power transistor MU 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV


    OCR Scan     		PDF 130CIV 109DP O-220 104DP CB-70 2N 326 Transistor transistor ESM 3004 DARLINGTON ESM 30 npn 1000V 100a ESM4016 ESM 3004 transistor BU 184 transistor ESM 3001 transistor ESM 2060T darlington NPN 600V 8a transistor

    BUK445-600B

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D • hbS3T31 003D575 Philips Semiconductors PowerMOS transistor PINNING -S O T 1 86 PIN BUK445-600B QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF hbS3T31 BUK445-600B -SOT186 BUK445-600B

    TIL186

    Abstract: No abstract text available
    Text: TILI 86-1, TILI 86-2, TIL186-3, TIL186 4 AC INPUT OPTOCOUPLERS 0 2 9 8 1 , DECEMBER 1 9 8 6 -R E V IS E D JUNE 198 9 • A-C Signal Input • Choice of Four Current Transfer Ratios • Gallium Arsenide Dual-Diode Infrared Sources Coupled to a Silicon NPN Photo-Transistor


    OCR Scan     		PDF TIL186-3, TIL186 E65085 aA186

    Philips transistor k1

    Abstract: BUK445-600B
    Text: N AMER PH IL IPS/DISCRETE bTE D • hbS3T31 003D575 2ST « A P X Philips Semiconductors Product Specification PowerMOS transistor PINNING -S O T 1 86 PIN QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF 003D575 BUK445-600B PINNING-SOT186 /V-12 Philips transistor k1

    74c74

    Abstract: No abstract text available
    Text: -JSntnm [p[M>}[p yj Tr ©ÄTTÄIL ( MEDIUM VOLTAGE, FAST SWITCHING Devices. Inc NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* * (FORMERLY 86) CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)


    OCR Scan     		PDF 305mm) 74c74

    Untitled

    Abstract: No abstract text available
    Text: i - 86D 0 1 86 0 m ObE D N AUER PHILIPS/DISCRETE D T - bbSBTBl DDIMDIS 3 T" 7 3 BLX97 MAINTENANCE TYPE U.H.F. LINEAR POWER TRANSISTOR N-P-N m ulti-em itter silicon planar epitaxial transistor primarily fo r use in linear u.h.f. amplifiers for television transposers and transmitters.


    OCR Scan     		PDF BLX97 class-78

    BLU51

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE OLE D 86 D 0 1 1 2 4 ^53^31 0Q133b2 □ D 7- - 3 3 - BLU 51 A V.H.F./U.H.F. PUSH-PULL POWER TRANSISTOR N-P-N silicon planar epitaxial push-pull transistor designed fo r use in m ilitary and professional wideband applications in the 30 to 400 MHz range.


    OCR Scan     		PDF 0Q133L BLU51 BLU51

    BLW 95

    Abstract: No abstract text available
    Text: h*\E t> m b b s a ^ a i o o s T H b i o?i i IAPX N A PIER PHILIPS/DISCRETE BLW 86 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF

    transistor c1684

    Abstract: C1685 R transistor optocoupler H11A1 C1685 transistor TRANSISTOR C1685 C1685 C1684 transistor C1661
    Text: TRANSISTOR OUTPUT OPTOCOUPLER PTOELECIRDNICS H11A1 DESCRIPTION PACKAGE DIMENSIONS t ~ r~ J-3 6-86 MAX 6.10 w J ' 03 J_ if f g j 8.89 _ 8.38 _ 0.2 a T - The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from


    OCR Scan     		PDF H11A1 H11A1 E90700 C1683 C1684 C1685 C1296A transistor c1684 C1685 R transistor optocoupler H11A1 C1685 transistor TRANSISTOR C1685 C1684 transistor C1661

    2N705

    Abstract: I960 ARMv Germanium mesa
    Text: MIL-S-19500/86A 20 March 19o4_ SUPERSEDING MII/-S-19500/86 NAVY 6 June I960 ' MILITARY SPECIFICATION TRANSISTOR, PNP, GERMANIUM TYPE 2N705 This specification has been approved bv the Department of Defense agd is mandatory for use by the Department^ of the Armv. the Navv.


    OCR Scan     		PDF MH/-S-19500/86A I/-S-19500/86 2N705 MIL-S-19500 T0-18) MIL-S-19500. ruL-S-19500 2N705 I960 ARMv Germanium mesa

    2005A

    Abstract: 2SC3000 J160 transistor marking JB
    Text: Ordering number ; EN 86 6 C 2SC 3000 NPN Epitaxial P lanar Silicon Transistor HF Amp Applications Features . FBET series . High fT and small ere. Absolute H a x l m Ratings at Ta=2 5C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    OCR Scan     		PDF 2SC3000 2034/2034A SC-43 7tlt17D7b 2005A 2SC3000 J160 transistor marking JB

    Asg TRANSISTOR

    Abstract: 008a AT-42086 AT-42086-TR1 T-31-21 Avantek amplifier AVANTEK transistor
    Text: AVANTEK INC EOE D AVANTEK • 11411ht GDGb4Tà AT-42086 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 86 Plastic Package Features • • • • • • b High Output Power: 20.5 dBm typical Pi dB at 2.0 GHz High Gain at 1 dB Compression:


    OCR Scan     		PDF 11411ht AT-42086 AT-42086 CA95054 Asg TRANSISTOR 008a AT-42086-TR1 T-31-21 Avantek amplifier AVANTEK transistor

    HTGB

    Abstract: No abstract text available
    Text: W hpl HEW LETT mL'fim P A C K A R D 4.8 V NPN Silicon Bipolar Common Em itter Transistor Technical Data AT-38086 Features • 4.8 Volt Pulsed p ulse width = 577 [isec, duty cycle = 12.5% /CW Operation 85 mil Plastic Surface Mount Package Outline 86 • +28 dBm Pulsed Pout


    OCR Scan     		PDF AT-38086 AT-38086 5965-5959E 0Qlb711 HTGB

    120v 10a transistor

    Abstract: No abstract text available
    Text: SOLITRON DEVICES INC fib D E | A3hAb02 D002£7b 0 ~f~ 'T'~ 3 } ~ ° * ELEMENT NUMBER 186 MEDIUM VOLTAGE, FAST SWITCHING NPN E P IT A X IA L/T R IP L E DIFFUSED PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 A Aluminum FO RM ERLY 86


    OCR Scan     		PDF A3hAb02 305mm) 700pF 700pF 2N3597, 2N3599, 2N5539, SDT8301 120v 10a transistor

    CTC 880 transistor

    Abstract: CTC 313 transistor 3 pin CTC 880 transistor GSM0102 CTC 313 transistor pin diagram T1L112 ctc 313 npn transistor
    Text: T O ñ H EW LETT’ m LEM PA CK A R D 4.8 V NPN Silicon Bipolar Common Em itter Transistor Technical Data AT-38086 Features • 4.8 Volt Pulsed pulse width = 577 usee, duty cycle = 12.5% /CW Operation 85 mil Plastic Surface Mount Package Outline 86 • +28 dBm Pulsed Pout


    OCR Scan     		PDF AT-38086 AT-38086 CTC 880 transistor CTC 313 transistor 3 pin CTC 880 transistor GSM0102 CTC 313 transistor pin diagram T1L112 ctc 313 npn transistor