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    TRANSISTOR 902 Search Results

    TRANSISTOR 902 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 902 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    transistor Common Base configuration

    Abstract: IB0810M50 IB0810M12 f 0952 radar circuit component transistor Common collector configuration ballast 300 watt Transistor Data Book
    Text: Part Number: Integra IB0810M12 TECHNOLOGIES, INC. 12 Watt L-Band Radar Transistor Frequency : Output Power : Power Gain : Efficiency : Output VSWR : Pulse Width : Duty Factor : Collector Voltage : Driver Transistor Use as driver transistor IB0810M50. for Bandwidth


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    IB0810M12 IB0810M50. IB0810M12-SF-REV-NC transistor Common Base configuration IB0810M50 IB0810M12 f 0952 radar circuit component transistor Common collector configuration ballast 300 watt Transistor Data Book PDF

    BFR540

    Abstract: MSB003 BFR540 philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 The transistor is encapsulated in a


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    BFR540 BFR540 MSB003 BFR540 philips PDF

    BFR540

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1995 September 1999 Aug 23 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR540 The transistor is encapsulated in a


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    BFR540 BFR540 125006/03/pp16 MSB003 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    PR37 RESISTOR

    Abstract: PR37 resistors
    Text: N AUER PHILIPS/DISCRETE b^E » bbS3^31 □□2'ISIS D72 BLW96 IAPX H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, A B and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents


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    BLW96 PR37 RESISTOR PR37 resistors PDF

    D 400 F 6 F BIPOLAR TRANSISTOR

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope


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    BUK866-400IZ 300us) D 400 F 6 F BIPOLAR TRANSISTOR PDF

    nec 2401 831

    Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and


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    2SC5010 2SC5010 nec 2401 831 nec 2401 2SC5010-T1 437 20000 marking 83 7749 transistor PDF

    BFC505

    Abstract: MBG20 IC vco 900 1800 mhz MGG216
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFC505 NPN wideband cascode transistor Product specification Supersedes data of 1995 Sep 01 File under Discrete Semiconductors, SC14 1996 Oct 08 Philips Semiconductors Product specification NPN wideband cascode transistor


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    BFC505 OT353 BFC505 MBG20 IC vco 900 1800 mhz MGG216 PDF

    BFC520

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFC520 NPN wideband cascode transistor Product specification Supersedes data of 1996 Oct 08 File under Discrete Semiconductors, SC14 1997 Sep 10 Philips Semiconductors Product specification NPN wideband cascode transistor


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    BFC520 OT353 SCA55 127127/00/03/pp12 BFC520 PDF

    MRC026

    Abstract: MRC027 MRC024 MRC029 MRC025 MRC028 BFS520 N2 SC70 MRC021
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS520 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS520 • High transition frequency


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    BFS520 OT323 MBC870 OT323 MRC026 MRC027 MRC024 MRC029 MRC025 MRC028 BFS520 N2 SC70 MRC021 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFS505 NPN 9 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFS505 PINNING • Low current consumption PIN DESCRIPTION 3 handbook, 2 columns


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    BFS505 OT323 MBC870 OT323. OT323 R77/03/pp14 PDF

    transistor NEC B 617

    Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and


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    2SC5010 2SC5010 transistor NEC B 617 nec 2035 744 zo 607 p 408 7749 transistor ic 151 811 transistor 3568 PDF

    MRC027

    Abstract: MRC021 MRC025 BFR520T SC75 MRC028 MAM337
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR520T NPN 9 GHz wideband transistor Preliminary specification 1999 Oct 18 Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor BFR520T PINNING FEATURES • High power gain PIN DESCRIPTION


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    M3D173 BFR520T OT416 budgetnum/ed/pp12 MRC027 MRC021 MRC025 BFR520T SC75 MRC028 MAM337 PDF

    BFR520

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR520 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 telephones CT1, CT2, DECT, etc. ,


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    BFR520 BFR520 MSB003 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AflER PHILIPS/DISCRETE 86D 01812 ObE D b b s a ' m oam osa a • BLX92A D r-3 3 - 4 5 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V, The transistor is resistance stabilized and is guaranteed to withstand severe


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    BLX92A QQ14D5 PDF

    MRC016

    Abstract: MRC013 MRC020 MRC012 MRC017 BFS505 Ghz dB transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS505 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFS505 PINNING • Low current consumption


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    BFS505 OT323 MBC870 OT323 OT323. MRC016 MRC013 MRC020 MRC012 MRC017 BFS505 Ghz dB transistor PDF

    MRC002

    Abstract: MRC005 MRC008 BFS540 MRC003 philips bfs540
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFS540 PINNING • High power gain


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    BFS540 OT323 MBC870 OT323 OT323. MRC002 MRC005 MRC008 BFS540 MRC003 philips bfs540 PDF

    bfr505

    Abstract: MSB003 mra723 transistor ZO 103 MA
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR505 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR505 PINNING • High power gain


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    BFR505 BFR505 MSB003 mra723 transistor ZO 103 MA PDF

    MSB003

    Abstract: BFR540
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Aug 23 2000 May 30 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 FEATURES DESCRIPTION


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    M3D088 BFR540 613516/04/pp16 MSB003 BFR540 PDF

    BFG541 application sheet

    Abstract: bfg541 V 904 RL 805
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG541 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG541 PINNING • High power gain


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    BFG541 BFG541 application sheet bfg541 V 904 RL 805 PDF

    MRC005

    Abstract: MRC008 BFS540 MRC006
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BFS540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 05 2000 May 30 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 FEATURES DESCRIPTION


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    M3D102 BFS540 OT323 MBC870 R77/04/pp13 MRC005 MRC008 BFS540 MRC006 PDF

    MRC016

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS505 NPN 9 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFS505 PINNING • Low current consumption PIN DESCRIPTION 3 handbook, 2 columns


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    BFS505 OT323 R77/03/pp14 771-BFS505-T/R MRC016 PDF

    BFS505

    Abstract: MRC013 a 103 m Transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS505 NPN 9 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFS505 PINNING • Low current consumption PIN DESCRIPTION 3 handbook, 2 columns


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    BFS505 OT323 MBC870 OT323. OT323 R77/03/pp14 BFS505 MRC013 a 103 m Transistor PDF