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    TRANSISTOR 9024 Search Results

    TRANSISTOR 9024 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 9024 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor Common Base configuration

    Abstract: IB0810M50 IB0810M12 f 0952 radar circuit component transistor Common collector configuration ballast 300 watt Transistor Data Book
    Text: Part Number: Integra IB0810M12 TECHNOLOGIES, INC. 12 Watt L-Band Radar Transistor Frequency : Output Power : Power Gain : Efficiency : Output VSWR : Pulse Width : Duty Factor : Collector Voltage : Driver Transistor Use as driver transistor IB0810M50. for Bandwidth


    Original     		PDF IB0810M12 IB0810M50. IB0810M12-SF-REV-NC transistor Common Base configuration IB0810M50 IB0810M12 f 0952 radar circuit component transistor Common collector configuration ballast 300 watt Transistor Data Book

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1012S800 Preliminary TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1012S800 is designed for L-Band avionics systems operating at 1025 to 1150 MHz.


    Original     		PDF IB1012S800 IB1012S800 IB1012S800-REV-PR1-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1011M70 Preliminary TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M70 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.


    Original     		PDF IB1011M70 IB1011M70 IB1011M70-REV-PR1-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1214M375 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor The high power pulsed radar transistor device part number IB1214M375 is designed for L-Band radar systems operating over the instantaneous bandwidth of


    Original     		PDF IB1214M375 IB1214M375 IB1214M375-REV-PR1-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1011M20 Preliminary TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M20 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.


    Original     		PDF IB1011M20 IB1011M20 IB1011M20-REV-PR1-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1214M32 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M32 is designed for L-Band radar systems operating over


    Original     		PDF IB1214M32 IB1214M32 IB1214M32-REV-NC-DS-REV-B

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1214M150 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M150 is designed for L-Band radar systems operating


    Original     		PDF IB1214M150 IB1214M150 IB1214M150-REV-NC-DS-REV-A

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2226M160 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2226M160 is designed for S-Band radar systems operating


    Original     		PDF IB2226M160 IB2226M160 IB2226M2160 IB2226M160-REV-PR1-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1011S350 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor device part number IB1011S350 is designed for L-Band radar systems operating


    Original     		PDF IB1011S350 IB1011S350 1090MHz. D1977-2 IB1011S350-REV-NC-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1214M55 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high fT L-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB1214M55 is designed for L-Band radar systems operating over


    Original     		PDF IB1214M55 IB1214M55 IB1214M55-REV-NC-DS-REV-C

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB0810M50 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB0810M50 is designed for L-Band radar systems operating


    Original     		PDF IB0810M50 IB0810M50 IB0810M50-REV-NC-DS-REV-A

    D1790

    Abstract: No abstract text available
    Text: Part Number: Integra IB1011S70 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor device part number IB1011S70 is designed for L-Band radar systems operating


    Original     		PDF IB1011S70 IB1011S70 1090MHz. IB1011S70- D1790

    bd 142 transistor

    Abstract: No abstract text available
    Text: Part Number: Integra IB0912L200 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band JTIDS Transistor Class C Operation − High Efficiency The high power pulsed transistor device part number IB0912L200 is designed for systems operating over the instantaneous bandwidth of


    Original     		PDF IB0912L200 IB0912L200 IB0912L200-REV-NC-DS-REV-C bd 142 transistor

    D1788

    Abstract: No abstract text available
    Text: Part Number: Integra IB1011S250 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor device part number IB1011S250 is designed for L-Band radar systems operating


    Original     		PDF IB1011S250 IB1011S250 1090MHz. IB1011S250-REV-NC-DS-REV-A D1788

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2731MH110 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2731MH110 is designed for S-Band radar systems operating over


    Original     		PDF IB2731MH110 IB2731MH110 IB2731MH110-REV-NC-DS-REV-B

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2856S250 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT Pulsed Medical Transistor Class C Operation − High Efficiency The high power pulsed transistor part number IB2856S250 is designed to operate in class C mode. This common base


    Original     		PDF IB2856S250 IB2856S250 IB2856S250-REV-NC-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB3135MH65 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high f T S-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB3135MH65 is designed for S-Band radar systems operating over the


    Original     		PDF IB3135MH65 IB3135MH65 IB3135MH65-REV-NC-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB3135MH75 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high f T S-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB3135MH75 is designed for S-Band radar systems operating over the


    Original     		PDF IB3135MH75 IB3135MH75 IB3135MH75-REV-NC-DS-REV-A

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB450S500 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT UHF Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB450S500 is designed for UHF radar systems operating at 450 MHz. While operating


    Original     		PDF IB450S500 IB450S500 IB450S500-REV-NC-DS-REV-C

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2931MH55 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2931MH55 is designed for S-Band radar systems operating over the


    Original     		PDF IB2931MH55 IB2931MH55 IB2931MH55-REV-NC-DS-REV-NC

    bd 142 transistor

    Abstract: No abstract text available
    Text: Part Number: Integra IB0810M12 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB0810M12 is designed for L-Band radar systems operating over the instantaneous


    Original     		PDF IB0810M12 IB0810M12 IB0810M12-REV-NC-DS-REV-A bd 142 transistor

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1214M6 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M6 is designed for L-Band radar systems operating over


    Original     		PDF IB1214M6 IB1214M6 IB1214M6-REV-PR1-DS-REV-B

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF