TRANSISTOR 9529 Search Results

TRANSISTOR 9529 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 9529 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
DARLINGTON TRANSISTOR ARRAY Abstract: No abstract text available Text: A Business Partner of Renesas Electronics Corporation. O P T O C O U P L E R S + S O L I D S TAT E R E L AY S www.cel.com 2013 California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound	Original		PDF
c125t Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK Text: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-	Original	DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA 005-Lr DTA114TUA DTC343TS -50mA, f-100MHz 50/1A rat10 C343T) c125t Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK	PDF
RF MOSFET MODULE Abstract: MOSFET Amplifier Module H46S Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M9595M RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp. DESCRIPTION The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the	Original	RA03M9595M 952-954MHz RA03M9595M RF MOSFET MODULE MOSFET Amplifier Module H46S	PDF
transistor marking code H11S Abstract: H11S marking CODE H11S rf transistor mar 8 RA05H9595M RA05H9595M-101 MOSFET Amplifier Module 150 mhz amplifier module 5w Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.	Original	RA05H9595M 952-954MHz RA05H9595M 954-MHz transistor marking code H11S H11S marking CODE H11S rf transistor mar 8 RA05H9595M-101 MOSFET Amplifier Module 150 mhz amplifier module 5w	PDF
SMD M05 sot23 Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly	Original	2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404	PDF
transistor 9527 Abstract: 9544 transistor transistor 9529 RF MOSFET MODULE ra RA Series 9522 transistor transistor 1w 9533 RA01L8693MA 9542 mitsubishi rfid reader module circuit diagrams Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the	Original	RA01L9595M 952-954MHz RA01L9595M transistor 9527 9544 transistor transistor 9529 RF MOSFET MODULE ra RA Series 9522 transistor transistor 1w 9533 RA01L8693MA 9542 mitsubishi rfid reader module circuit diagrams	PDF
f953 Abstract: H11S RA05H9595M RA05H9595M-101 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.	Original	RA05H9595M 952-954MHz RA05H9595M 954-MHz f953 H11S RA05H9595M-101	PDF
H11S Abstract: RA05H9595M RA05H9595M-101 Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.	Original	RA05H9595M 952-954MHz RA05H9595M 954-MHz H11S RA05H9595M-101	PDF
Untitled Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M9595 RA03M9595M 03M9595M RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp. DESCRIPTION The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the	Original	RA03M9595M 03M9595 952-954MHz RA03M9595M	PDF
MOSFET Amplifier Module Abstract: f953 945 mosfet Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M9595M RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp. DESCRIPTION The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the	Original	RA03M9595M 952-954MHz RA03M9595M MOSFET Amplifier Module f953 945 mosfet	PDF
Untitled Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456767 1234567675 345676758 RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp. DESCRIPTION The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the	Original	952-954MHz RA03M9595M RA03M9595M	PDF
mosfet 9544 Abstract: mosfet st 9544 transistor 9527 mosfet 9519 mosfet 9517 ST 9527 RF MOSFET MODULE 9529 mosfet 951 t40 9544 transistor Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the	Original	RA01L9595M 952-954MHz RA01L9595M mosfet 9544 mosfet st 9544 transistor 9527 mosfet 9519 mosfet 9517 ST 9527 RF MOSFET MODULE 9529 mosfet 951 t40 9544 transistor	PDF
transistor 9527 Abstract: T 9527 st 9535 9542 mitsubishi data sheet transistor 9527 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the	Original	RA01L9595M 952-954MHz RA01L9595M transistor 9527 T 9527 st 9535 9542 mitsubishi data sheet transistor 9527	PDF
mosfet st 9544 Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the	Original	RA01L9595M 952-954MHz RA01L9595M mosfet st 9544	PDF

Untitled Abstract: No abstract text available Text: SPECIFICATION FOR APPROVAL Customer： Description： Magnetic Buzzer Soberton Part No. ： ST-03BL-1 Date：2015-02-26 Customer Model No. ： Date of Approval Authorization Signature SOBERTON, INC. 211 N. First Street Minneapolis, MN. 55401 Tel：612-849-6205	Original	ST-03BL-1 860-1060mbar 1000PCS 330mmx330mmx30mm	PDF
Untitled Abstract: No abstract text available Text: SPECIFICATION FOR APPROVAL Customer： Description： Magnetic Buzzer SOBERTON Part No. ：ST-0402T Date：2015-06-26 Customer Model No. ： Date of Approval Authorization Signature 211 North First Street Minneapolis, MN 55401 Tel：612-849-6205 Fax：952-933-3120	Original	ST-0402T 860-1060mbar 3000PCS 330mmx330mmx30mm 1x3000PCS	PDF
Untitled Abstract: No abstract text available Text: SPECIFICATION FOR APPROVAL Customer： Description： Magnetic Buzzer Soberton Part No. ：ST-0402 Date：2015-06-04 Customer Model No. ： Date of Approval Authorization Signature 211 N. First Street Minneapolis, MN. 55401 Tel：612-849-6205 Fax：952-933-2130	Original	ST-0402 4000Test 860-1060mbar 3000PCS 330mmx330mmx30mm 1x3000PCS	PDF
factors on which internal internal resistance of a cell depends experiment Abstract: Simple PSpice Models Let You Simulate Common Battery 104 TANTALUM capacitor nec capacitor 220 microfarad A 16V avx taj MOSFET 2906 100NS LTC1154 22UF 47UH Text: TECHNICAL INFORMATION INCREASING RELIABILITY OF SMD TANTALUM CAPACITORS IN LOW IMPEDANCE APPLICATIONS by David Mattingly Applications Engineer Myrtle Beach, SC Abstract: High dv/dt conditions in low impedance circuits using surface mount tantalum capacitors is discussed.	Original	5M994-N factors on which internal internal resistance of a cell depends experiment Simple PSpice Models Let You Simulate Common Battery 104 TANTALUM capacitor nec capacitor 220 microfarad A 16V avx taj MOSFET 2906 100NS LTC1154 22UF 47UH	PDF
tape 3m 9448 Abstract: transistor 1548b MIL-T-55155 1547B transistor 3m 9448 ED203 str 6654 str g 8656 transistor 1547B str 8656 Text: D E S I G N E R S A N D M A N U FAC T U R E R S RoHS COMPLIANT ~ ISO 9001 CERTIFIED M55 C2-FM3 m 10/23/06 10:19 AM Page C2 Auto & Subminiature Fuse Holders pages 34-37 2 in 1 Fuse Holder page 35 Miniature USB Plugs & Sockets page 88 Thumbscrews & Knobs page 76-84	Original		PDF
w2f transistor Abstract: TRANSISTOR w2f w2h transistor 40673 TRANSISTOR capacitor 22nF 1206 transistor w2h transistor 40673 fet 40673 40673 capacitor 104 100v Text: A KYOCERA GROUP COMPANY AVX Multilayer Ceramic Feedthru Chip Capacitors And Arrays Feedthru 0805/1206 Capacitors Table of Contents W2F/W3F Series - 0805 & 1206 Feedthru Chips . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W2H/W3H Series - High Current Feedthru Capacitors . . . . . . . . . . . . . . . . . . . . 5	Original	S-FTCA00M703-C w2f transistor TRANSISTOR w2f w2h transistor 40673 TRANSISTOR capacitor 22nF 1206 transistor w2h transistor 40673 fet 40673 40673 capacitor 104 100v	PDF
Horizontal Transistor TT 2246 Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601 Text: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz	OCR Scan	HFA1105 HFA1115 350MHz 225MHz 000V/ps 50MHz. Horizontal Transistor TT 2246 ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601	PDF
GG44 Abstract: 0P295 OP295 Text: □ Dual/Quad Rail-to-Rail Operational Amplifiers 0P295/0P495 ANALOG DEVICES PIN CONN ECTIO N S FEATUR ES Rail-to-Rail Output Swing Single-Supply Operation: +3 V to 36 V Low Offset Voltage: 300 n-V Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1000 V/mV	OCR Scan	0P295/0P495 16-Lead 14-Lead OP-495 09E-14 IE-13 GG44 0P295 OP295	PDF
hep 154 silicon diode Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This	OCR Scan	MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp	PDF
signetics 10116 Abstract: NE5212 Signetics ne5212 NE5212N signetics ne5230 SE5212N wifi 5 watt amplifier circuit LT 4320 Text: NE/SA/SE5212 Signetics Transimpedance Amplifier 140MHz Product Specification Linear Products DESCRIPTION FEATURES The NE/SA/SE5212 is a 14ki2 transim pedance, wideband, low noise differen tial output amplifier, particularly suitable for signal recovery in fiber optic receiv	OCR Scan	NE/SA/SE5212 140MHz) NE/SA/SE5212 14ki2 140MHz NE5212 NE5230 signetics 10116 NE5212 Signetics NE5212N signetics ne5230 SE5212N wifi 5 watt amplifier circuit LT 4320	PDF

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TRANSISTOR 9529 Search Results

TRANSISTOR 9529 Result Highlights (5)

TRANSISTOR 9529 Datasheets Context Search

DARLINGTON TRANSISTOR ARRAY

c125t

RF MOSFET MODULE

transistor marking code H11S

SMD M05 sot23

transistor 9527

f953

H11S

Untitled

MOSFET Amplifier Module

Untitled

mosfet 9544

transistor 9527

mosfet st 9544

Untitled

Untitled

Untitled

factors on which internal internal resistance of a cell depends experiment

tape 3m 9448

w2f transistor

Horizontal Transistor TT 2246

GG44

hep 154 silicon diode

signetics 10116