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    TRANSISTOR 955 MOTOROLA Search Results

    TRANSISTOR 955 MOTOROLA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 955 MOTOROLA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF184

    Abstract: transistor 955 MOTOROLA smd-transistor DATA BOOK MRF6522-10 AN1670 RO4003 SMD TRANSISTOR smd J225 Nippon capacitors
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1670/D AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France


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    PDF AN1670/D AN1670 MRF184 transistor 955 MOTOROLA smd-transistor DATA BOOK MRF6522-10 AN1670 RO4003 SMD TRANSISTOR smd J225 Nippon capacitors

    500 watts amplifier schematic diagram pcb layout

    Abstract: 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor
    Text: MOTOROLA Order this document by AN1670/D SEMICONDUCTOR APPLICATION NOTE AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note demonstrates the feasibility of a


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    PDF AN1670/D AN1670 500 watts amplifier schematic diagram pcb layout 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor

    J133 mosfet transistor

    Abstract: transistor j239 J143 MOSFET J239 mosfet transistor J104 MOSFET J122 transistor mosfet j133 J133 MOSFET J133 transistor J239 TRANSISTOR
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make


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    PDF MRF9002R2 MRF9002R2 J133 mosfet transistor transistor j239 J143 MOSFET J239 mosfet transistor J104 MOSFET J122 transistor mosfet j133 J133 MOSFET J133 transistor J239 TRANSISTOR

    J133 mosfet transistor

    Abstract: mosfet j133 J104 MOSFET j122 mosfet mosfet j122 9601 mosfet J122 transistor transistor z5 TRANSISTOR J15
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make


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    PDF MRF9002R2 MRF9002R2 J133 mosfet transistor mosfet j133 J104 MOSFET j122 mosfet mosfet j122 9601 mosfet J122 transistor transistor z5 TRANSISTOR J15

    J133 mosfet transistor

    Abstract: transistor 955 MOTOROLA
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device make


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    PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D J133 mosfet transistor transistor 955 MOTOROLA

    motorola MOSFET 935

    Abstract: J133 mosfet transistor transistor 955 MOTOROLA sps transistor
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make


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    PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola MOSFET 935 J133 mosfet transistor transistor 955 MOTOROLA sps transistor

    motorola rf Power Transistor

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET


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    PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola rf Power Transistor

    J239

    Abstract: motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET


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    PDF MRF9002R2/D MRF9002R2 J239 motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET


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    PDF MRF9045MR1 RDMRF9045MR1

    J133 mosfet transistor

    Abstract: transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor A113 MRF9002R2 RO4350 mosfet j133 MOTOROLA TRANSISTOR 935
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL


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    PDF MRF9002R2/D MRF9002R2 J133 mosfet transistor transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor A113 MRF9002R2 RO4350 mosfet j133 MOTOROLA TRANSISTOR 935

    RF-35-0300

    Abstract: 9601 mosfet 9450 transistor motorola MOSFET 935
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


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    PDF Cha41 MRF9030MR1 RF-35-0300 9601 mosfet 9450 transistor motorola MOSFET 935

    945 mosfet n

    Abstract: 93F2975 c17 dual mos 9450 transistor 52169
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it


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    PDF MRF9060MBR1 945 mosfet n 93F2975 c17 dual mos 9450 transistor 52169

    transistor A113

    Abstract: a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table
    Text: Freescale Semiconductor Technical Data Rev. 5, 1/2005 Will be replaced by MRF9002NT1 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


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    PDF MRF9002NT1 MRF9002R2 MRF9002R2 transistor A113 a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table

    3296 Variable Resistor terminals BOURNS

    Abstract: GRM42-6COG* murata GRM36COG560J50 GRM36COG101J50 GRM36COG100D50 GRM36COG010C50 617PT1026 murata frequency mixer gsm GRM42-6Y5V105 GRM42-6COG
    Text: TRF1020 GSM RECEIVER SLWS028B – MAY 1998 – REVISED SEPTEMBER 1998 D D D D D Operates from 2.75 V to 3.5 V Supply Low Current Consumption Low Profile Package: 48-pin Plastic Quad Flat Package PQFP Global System for Mobile Communications (GSM), Class 3, 4, or 5 Mobile Station (MS)


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    PDF TRF1020 SLWS028B 48-pin 3296 Variable Resistor terminals BOURNS GRM42-6COG* murata GRM36COG560J50 GRM36COG101J50 GRM36COG100D50 GRM36COG010C50 617PT1026 murata frequency mixer gsm GRM42-6Y5V105 GRM42-6COG

    2N2369 equivalent

    Abstract: 2N3227 2N2369 transistor equivalent transistor 2N2369 2N3227 MOTOROLA 2N2369 D4613 2N3221 transistor 2n2369 motorola semiconductor handbook
    Text: 2N2369 2N3227 NPN SILICON TRANSISTORS LOW CURRENT @ EPITAXIAL “@ HIGH-SPEED for SWITCHING @ @ APPLICATIONS e e . Switching Times and Saturation Voltage Specified at Two Current Levels l= at 10 mA and 100 mA ● @ @ Low Input and Output Capacitance CO~= Ci~ = 4 pf matimum


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    PDF 2N2369 2N3227 2N2369 equivalent 2N3227 2N2369 transistor equivalent transistor 2N2369 2N3227 MOTOROLA 2N2369 D4613 2N3221 transistor 2n2369 motorola semiconductor handbook

    E142 wafer format

    Abstract: HEL32 MR 4710 IC 300w power amplifier circuit diagram HEL05 klt22 HEL12 HEL31 HEL16 HLT22 HLT28
    Text: DL140/D Rev. 6, Jan-2001 High Performance ECL Data ECLinPS and ECLinPS Lite™ High Performance ECL Device Data ECLinPS, ECLinPS Lite, and Low Voltage ECLinPS DL140/D Rev. 6, Jan–2001  SCILLC, 2001 Previous Edition  2000 “All Rights Reserved”


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    PDF DL140/D Jan-2001 r14525 E142 wafer format HEL32 MR 4710 IC 300w power amplifier circuit diagram HEL05 klt22 HEL12 HEL31 HEL16 HLT22 HLT28

    MRF9002NR2

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


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    PDF MRF9002R2 MRF9002NR2 PFP-16

    J133 mosfet transistor

    Abstract: ON SEMICONDUCTOR J122 MRF9002R2 transistor a113 a113 transistor marking transistor RF
    Text: MRF9002R2 Rev. 5, 1/2005 Freescale Semiconductor Technical Data Will be replaced by MRF9002NT1 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


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    PDF MRF9002NT1 MRF9002R2 MRF9002R2 J133 mosfet transistor ON SEMICONDUCTOR J122 transistor a113 a113 transistor marking transistor RF

    ON SEMICONDUCTOR J122

    Abstract: MRF9002NR2
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


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    PDF MRF9002NR2 PFP-16 MRF9002R2 MRF9002R2 ON SEMICONDUCTOR J122

    J133 mosfet transistor

    Abstract: transistor j239 MRF9002NR2 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


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    PDF MRF9002R2 MRF9002NR2 PFP-16 J133 mosfet transistor transistor j239 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133

    power transistor unit j122

    Abstract: MRF9002NR2
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 7, 7/2005 RF Power Field Effect Transistor Array N -Channel Enhancement-Mode Lateral MOSFET MRF9002NR2 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device


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    PDF MRF9002NR2 MRF9002NR2 power transistor unit j122

    MRF186

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this


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    PDF MRF186/D MRF186 DEVICEMRF186/D

    MOTOROLA mac15 TRANSISTOR

    Abstract: MCR225-2FP 2FP TRANSISTOR mac21B motorola transistor mac15 MJF10012 MJF16006A RECTIFIER 638 MOTOROLA tolerancing "Power Semiconductor Applications"
    Text: MOTOROLA SC XST RS/ R F MbE D • b 3 b ? 2 S 4 DDTbESl b H MOTb Ç) Selection by Package (continued) THYRISTORS SCRs — Style 2 TRIACs — Style 3 Device T2500BFP T2500DFP T2500MFP T2500NFP MAC21B-4FP MAC218-6FP MAC218-8FP MAC218-10FP MAC228-4FP MAC228-6FP


    OCR Scan
    PDF T2500BFP T2500DFP T2500MFP T2500NFP MAC21B-4FP MAC218-6FP MAC218-8FP MAC218-10FP MAC228-4FP MAC228-6FP MOTOROLA mac15 TRANSISTOR MCR225-2FP 2FP TRANSISTOR mac21B motorola transistor mac15 MJF10012 MJF16006A RECTIFIER 638 MOTOROLA tolerancing "Power Semiconductor Applications"

    MTA3055E

    Abstract: a/MTA3055E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA3055E Fully Isolated TMOS E-FET ™ Power Field Effect TVansistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES rDS on = 0.15 OHM M AX 60 VOLTS


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    PDF MTA3055E MTA3055E a/MTA3055E