BUZ72A
Abstract: TA17401 TB334
Text: BUZ72A Data Sheet December 2001 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features • 9A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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BUZ72A
TA17401.
O-220Aopment.
BUZ72A
TA17401
TB334
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Untitled
Abstract: No abstract text available
Text: BUZ72A Semiconductor Data Sheet June 1999 9A, 100 V, 0.250 Ohm, N-Channel Power MOSFET File Number 2262.2 Features • 9A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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BUZ72A
TA17401.
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BUZ72A
Abstract: TA17401 TB334
Text: BUZ72A Data Sheet June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching
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BUZ72A
TA17401.
BUZ72A
TA17401
TB334
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transistor buz 36
Abstract: C67078-S1313-A3
Text: BUZ 72A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 72 A 100 V 9A 0.25 Ω TO-220 AB C67078-S1313-A3 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1313-A3
transistor buz 36
C67078-S1313-A3
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transistor buz 36
Abstract: C67078-S1327-A3
Text: BUZ 72AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 G D Pin 3 S Type VDS ID RDS on Package Ordering Code BUZ 72 AL 100 V 9A 0.25 Ω TO-220 AB C67078-S1327-A3 Maximum Ratings Parameter Symbol
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O-220
C67078-S1327-A3
transistor buz 36
C67078-S1327-A3
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C67078-S1327-A3
Abstract: No abstract text available
Text: BUZ 72 AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 72 AL 100 V 9A 0.25 Ω TO-220 AB C67078-S1327-A3 Maximum Ratings Parameter Symbol
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O-220
C67078-S1327-A3
C67078-S1327-A3
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C67078-S1313-A3
Abstract: BUZ72A
Text: BUZ 72 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 72 A 100 V 9A 0.25 Ω TO-220 AB C67078-S1313-A3 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1313-A3
C67078-S1313-A3
BUZ72A
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BU272A
Abstract: BUZ72A
Text: interrii BUZ72A Data Sheet June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET PART NUMBER BU272A PACKAGE TO-220AB BRAND BUZ72A NOTE: When ordering, use the entire part number. 2262.2 Features • 9A, 100 V This is an N-Channel enhancement mode silicon gate power
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BUZ72A
TA17401.
BU272A
O-220AB
BUZ72A
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NTE2301
Abstract: No abstract text available
Text: NTE2301 Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glassivated Base–Collector Junction
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NTE2301
NTE2301
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BUZ72A
Abstract: mosfet .5a 100v
Text: BUZ72A Data Sheet [ /Title BUZ7 2A /Subject (9A, 100V, 0.250 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features
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BUZ72A
O220AB
TA17401.
BUZ72A
mosfet .5a 100v
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BUZ71
Abstract: BUZ71A TB334 TO 220AB Mosfet TA9770 transistor buz71a
Text: BUZ71A Semiconductor Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET October 1998 File Number 2419.1 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as
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BUZ71A
BUZ71
TA9770.
BUZ71A
TB334
TO 220AB Mosfet
TA9770
transistor buz71a
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transistor buz71a
Abstract: BUZ71A TB334
Text: BUZ71A Data Sheet June 1999 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching
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BUZ71A
TA9770.
BUZ71of
transistor buz71a
BUZ71A
TB334
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BUZ71 application
Abstract: BUZ71 TB334
Text: BUZ71 Data Sheet June 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching
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BUZ71
TA9770.
BUZ71
BUZ71 application
TB334
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VF175-88
Abstract: RF GAIN LTD VF175 mosfet vhf power amplifier H101X all mosfet vhf power amplifier 175 w low-vhf amplifier
Text: VF175-88 175 W Low-VHF Amplifier Designed for VHF TV broadcast transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability • • • • • • 54 - 88 MHz 48 Volts Input/Output 50 Ω Pout : 175 W min
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VF175-88
40W267
VF175-88
RF GAIN LTD
VF175
mosfet vhf power amplifier
H101X
all mosfet vhf power amplifier
175 w low-vhf amplifier
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Untitled
Abstract: No abstract text available
Text: BUZ71A Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET June 1999 File Number 2419.2 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as
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BUZ71A
BUZ71
TA9770.
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BUZ71A
Abstract: TB334
Text: BUZ71A Data Sheet December 2001 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features • 13A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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BUZ71A
TA9770.
O-220ABopment.
BUZ71A
TB334
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BUZ71 application
Abstract: No abstract text available
Text: BUZ71 Data Sheet [ /Title BUZ7 1 /Subject (14A, 50V, 0.100 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features
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BUZ71
O220AB
TA9770.
BUZ71 application
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IRGPC50F
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD - 9.695A IRGPC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency
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IRGPC50F
10kHz)
O-247AC
IRGPC50F
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IRGPC50F
Abstract: No abstract text available
Text: PD - 9.695A IRGPC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.7V
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IRGPC50F
10kHz)
O-247AC
IRGPC50F
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IRGPC50F
Abstract: No abstract text available
Text: PD - 9.695A IRGPC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.7V
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IRGPC50F
10kHz)
O-247AC
IRGPC50F
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IRGPC50F
Abstract: pec 632 C9010
Text: PD - 9.695A IRGPC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.7V
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IRGPC50F
10kHz)
O-247AC
IRGPC50F
pec 632
C9010
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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Power Semiconductor Applications Philips Semiconductors
Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
Text: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2N109
2N1304
2N1305
2N1307
2N1613
2N1711
2N1893
2N2102
2N2148
2N2165
TRANSISTOR DATASHEET D1555
d1555 transistor
TRANSISTOR D1651
D1555
D1557
D1554
d1651
transistor s1854
transistor d1555
transistor d1878
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