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    TRANSISTOR 9BB Search Results

    TRANSISTOR 9BB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 9BB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Super-247 Package

    Abstract: IRG4PSC71UD
    Text: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than


    Original     		PDF 1682A IRG4PSC71UD Super-247 O-247 Super-247 Package IRG4PSC71UD

    Untitled

    Abstract: No abstract text available
    Text: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than


    Original     		PDF 1682A IRG4PSC71UD Super-247 O-247

    IRG4IBC30W

    Abstract: No abstract text available
    Text: PD - 91791 PRELIMINARY IRG4IBC30W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • 2.5kV, 60s insulation voltage † • Industry-benchmark switching losses improve


    Original     		PDF IRG4IBC30W O-220 IRG4IBC30W

    diode lt 247

    Abstract: IRG4PSC71UD TB diode 1084 GE
    Text: PD - 91682 IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than


    Original     		PDF IRG4PSC71UD Super-247 O-247 diode lt 247 IRG4PSC71UD TB diode 1084 GE

    IGBT collector voltage 5kV

    Abstract: IRG4IBC30W
    Text: PD - 91791 PRELIMINARY IRG4IBC30W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • 2.5kV, 60s insulation voltage † • Industry-benchmark switching losses improve


    Original     		PDF IRG4IBC30W O-220 IGBT collector voltage 5kV IRG4IBC30W

    600V igbt dc to dc boost converter

    Abstract: 480V1 IRG4IBC20W
    Text: PD - 91785 PRELIMINARY IRG4IBC20W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • 2.5kV, 60s insulation voltage † • Industry-benchmark switching losses improve


    Original     		PDF IRG4IBC20W O-220 600V igbt dc to dc boost converter 480V1 IRG4IBC20W

    IRG4BC40W

    Abstract: No abstract text available
    Text: PD - 9.1654 IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC40W IRG4BC40W

    1w5301

    Abstract: 1n414b AN-944 1W530 high voltage gate drive transformer IC not gate data sheet DS0026 IRF130 AN944 transistor bipolar superficial
    Text: Application Note AN-944 Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs Table of Contents Page 1. Input behavior of a MOS-gated transistor . 1 2. Test Circuit. 1


    Original     		PDF AN-944 1w5301 1n414b AN-944 1W530 high voltage gate drive transformer IC not gate data sheet DS0026 IRF130 AN944 transistor bipolar superficial

    2N7261U

    Abstract: IRHE7130 2N7261 equivalent IRHE8130 JANSH2N7261U JANSR2N7261U
    Text: PD - 91806A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHE7130 IRHE8130 JANSR2N7261U JANSH2N7261U N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage


    Original     		PDF 1806A IRHE7130 IRHE8130 JANSR2N7261U JANSH2N7261U 100Volt, 1x106 2N7261U IRHE7130 2N7261 equivalent IRHE8130 JANSH2N7261U JANSR2N7261U

    OZ930

    Abstract: IRG4PC50W *g4pc50w
    Text: PD - 9.1657A IRG4PC50W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4PC50W OZ930 IRG4PC50W *g4pc50w

    IRG4BC20W

    Abstract: No abstract text available
    Text: PD - 9.1652A IRG4BC20W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC20W IRG4BC20W

    AN-994

    Abstract: IRG4BC30W-S
    Text: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC30W-S and10) AN-994 IRG4BC30W-S

    ic AM 12A

    Abstract: AN-994 IRG4BC30W-S
    Text: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC30W-S ic AM 12A AN-994 IRG4BC30W-S

    2N7261

    Abstract: 2N7261 equivalent reverse bias diode characterstics IRHF7130 IRHF8130 JANSH2N7261 JANSR2N7261
    Text: PD - 90653B IRHF7130 IRHF8130 JANSR2N7261 JANSH2N7261 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage


    Original     		PDF 90653B IRHF7130 IRHF8130 JANSR2N7261 JANSH2N7261 100Volt, 1x106 2N7261 2N7261 equivalent reverse bias diode characterstics IRHF7130 IRHF8130 JANSH2N7261 JANSR2N7261

    Untitled

    Abstract: No abstract text available
    Text: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC30W-S topol22

    IRG4BAC50W

    Abstract: No abstract text available
    Text: PD -93769 PROVISIONAL IRG4BAC50W INSULATED GATE BIPOLAR TRANSISTOR C Features • Designed expressly for switch-mode power supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BAC50W 150kHz IRG4BAC50W

    IRG4BC30W

    Abstract: AN-994 IRG4BC30W-S
    Text: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		PDF IRG4BC30W-S IRG4BC30W AN-994 IRG4BC30W-S

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier PD - 9.1586 IRG4PC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4PC30S O-247AC O-247AC

    IRG4PC40S

    Abstract: No abstract text available
    Text: International I R Rectifier PD - 9.1465A IRG4PC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4PC40S O-247AC O-247AC IRG4PC40S

    Untitled

    Abstract: No abstract text available
    Text: ft II P D - 9.1629 International IOR Rectifier IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve


    OCR Scan     		PDF IRG4BC30W 0D2flb53

    Untitled

    Abstract: No abstract text available
    Text: P D - 9.1593 International IOR Rectifier IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4BC30S O-22QAB S54S2

    Untitled

    Abstract: No abstract text available
    Text: International IG R Rectifier PD - 9.1455A IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4BC40S TQ-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1581 International I R Rectifier IRG4PC50S PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized tor minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4PC50S O-247AC

    IRG4BC20KD

    Abstract: IGBT IRG4BC20KD IRGBC20KD2 transistor iqr
    Text: PD -9.1509 International JQR Rectifier IRG4BC20KD PREUMNAHY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz . and Short


    OCR Scan     		PDF IRG4BC20KD T0220A8 IRG4BC20KD IGBT IRG4BC20KD IRGBC20KD2 transistor iqr