C570X7R1H106KT000N
Abstract: 771-BLF642112 SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 blf642 C570x
Text: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent
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BLF642
771-BLF642112
BLF642
C570X7R1H106KT000N
SOT467
Technical Specifications of DVB-T2 Transmitter
DVB-T2
blf642,112
C570x
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APT13003Z-E1
Abstract: transistor 2808 APT13003 bcd
Text: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003 is a high voltage, high speed switching NPN Power transistor specially designed for off-line switch mode power supplies with low output power.
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APT13003
APT13003
APT13003Z-E1
transistor 2808
APT13003 bcd
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Technical Specifications of DVB-T2 Transmitter
Abstract: No abstract text available
Text: BLP10H610 Broadband LDMOS driver transistor Rev. 2 — 22 April 2014 Objective data sheet 1. Product profile 1.1 General description A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz. Table 1.
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BLP10H610
Technical Specifications of DVB-T2 Transmitter
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Untitled
Abstract: No abstract text available
Text: BLF888D; BLF888DS UHF power LDMOS transistor Rev. 1 — 5 March 2014 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter
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BLF888D;
BLF888DS
BLF888D
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smd transistor L33
Abstract: SMD l33 Transistor transistor smd l33 BLF879P smd transistor l32 2663 transistor j337 IEC C20 dimension J17-15 J0582
Text: BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF879P
771-BLF879P112
BLF879P
smd transistor L33
SMD l33 Transistor
transistor smd l33
smd transistor l32
2663 transistor
j337
IEC C20 dimension
J17-15
J0582
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Untitled
Abstract: No abstract text available
Text: BLF888D; BLF888DS UHF power LDMOS transistor Rev. 2 — 27 June 2014 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter
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BLF888D;
BLF888DS
BLF888D
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AP2132
Abstract: 2132mp REGULATOR 2A psop-8 2132mp-2.5g1
Text: Data Sheet 2A CMOS LDO Regulator AP2132 General Description Features The AP2132 are positive voltage regulator ICs fabricated by CMOS process. It consists of a voltage reference, an error amplifier, a power transistor, a resistor network for setting output voltage, a current
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AP2132
AP2132
2132mp
REGULATOR 2A psop-8
2132mp-2.5g1
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet 2A CMOS LDO Regulator AP2132 General Description Features The AP2132 are positive voltage regulator ICs fabricated by CMOS process. It consists of a voltage reference, an error amplifier, a power transistor, a resistor network for setting output voltage, a current
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AP2132
AP2132
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R5524N001
Abstract: R5524N002 r5524n
Text: R5524N SERIES USB HIGH-SIDE POWER SWITCH NO.EA-188-100618 OUTLINE The R5524N series is CMOS-based high-side MOSFET switch ICs for Universal Serial Bus USB applications. Using Nch FET as a switching transistor, low ON resistance (Typ.100mΩ) and reverse current
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R5524N
EA-188-100618
980mA)
Room403,
Room109,
R5524N001
R5524N002
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resistor 220 ohm
Abstract: capacitor siemens 4700 35 resistor 4700 ohm 200B G200 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM P220ECT-ND th 2167 20237 P220E
Text: PTF 10065 30 Watts, 1.93–1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization
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P220ECT-ND
1-877-GOLDMOS
1522-PTF
resistor 220 ohm
capacitor siemens 4700 35
resistor 4700 ohm
200B
G200
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
P220ECT-ND
th 2167
20237
P220E
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resistor 220 ohm
Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM capacitor siemens 4700 35 200B G200 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Text: PTF 10065 30 Watts, 1.93–1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization
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P220ECT-ND
1-877-GOLDMOS
1522-PTF
resistor 220 ohm
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
capacitor siemens 4700 35
200B
G200
2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
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RP110
Abstract: No abstract text available
Text: RP110x SERIES 150mA Low Supply Current LDO REGULATOR NO.EA-239-100610 OUTLINE The RP110x Series is a voltage regulator LDO IC, which has been developed using the CMOS process technology, with high output voltage accuracy, ultra-low supply current, and low ON-resistance transistor. The IC
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RP110x
150mA
EA-239-100610
Room403,
Room109,
RP110
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control circuit of induction cooker
Abstract: induction cooker circuit "induction cooker" circuit AP3902P-E1 ap3902 induction cooker china induction cooker circuit 700VCBO induction cooker transistor IC for induction cooker
Text: Product Brief LOW POWER PWM SWITCH FOR OFF-LINE SMPS Description The AP3902 PWM power switch consists of a fixed-frequency current-mode PWM controller and a high voltage transistor. It is specifically designed for high performance off-line switching power supplies or non-isolated small
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AP3902
AP3902
AP3902P-G1
AP3902P-E1
control circuit of induction cooker
induction cooker circuit
"induction cooker" circuit
AP3902P-E1
induction cooker
china induction cooker circuit
700VCBO
induction cooker transistor
IC for induction cooker
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25 uF capacitor
Abstract: RAYTHEON RMPA61800
Text: RMPA61800 Dual-Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61800 is a fully monolithic dual channel power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT
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RMPA61800
RMPA61800
25 uF capacitor
RAYTHEON
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CGD942C
Abstract: No abstract text available
Text: CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.
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CGD942C
OT115J
CGD942C
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CGD944C
Abstract: No abstract text available
Text: CGD944C 870 MHz, 25 dB gain power doubler amplifier Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.
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CGD944C
OT115J
CGD944C
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RAYTHEON
Abstract: Raytheon Company RMPA61810 2 watt rf transistor
Text: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to maximize
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RMPA61810
RMPA61810
RAYTHEON
Raytheon Company
2 watt rf transistor
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CGY1047
Abstract: No abstract text available
Text: CGY1047 1 GHz, 27 dB gain GaAs push-pull amplifier Rev. 2 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.
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CGY1047
OT115J
2002/95/EC,
CGY1047
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Untitled
Abstract: No abstract text available
Text: BUK95/962R8-30B TrenchMOS logic level FET Rev. 02 — 14 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.
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BUK95/962R8-30B
BUK952R8-30B
O-220AB)
BUK962R8-30B
OT404
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TRANSISTOR 1003
Abstract: CGD1042HI
Text: CGD1042HI 1 GHz, 22 dB gain GaAs high output power doubler Rev. 2 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
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CGD1042HI
OT115J
2002/95/EC,
TRANSISTOR 1003
CGD1042HI
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CGD1044H
Abstract: No abstract text available
Text: CGD1044H 1 GHz, 25 dB gain high output power doubler Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
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CGD1044H
OT115J
CGD1044H
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bly89a
Abstract: Transistor bly89a
Text: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every
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Q01414fl
BLY89A
7Z675I
bly89a
Transistor bly89a
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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MOC1005
Abstract: MOC1006 VQE 24 led VDE0113 VDE0160 VDE0832 VDE0833 transistor J5X
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC1005 M O C 1006 6-P in D IP O p to is o la to rs Transistor O utput These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • •
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
IEC204/
VDE0113,
VDE0160,
VDE0832,
VDE0833,
MOC1005
MOC1006
VQE 24 led
VDE0113
VDE0160
VDE0832
VDE0833
transistor J5X
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