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    TRANSISTOR A 1030 Search Results

    TRANSISTOR A 1030 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A 1030 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AVF450

    Abstract: D 1803 TRANSISTOR TRANSISTOR 1003 1034 transistor TACAN ASI10575 395 transistor transistor b 1166
    Text: AVF450 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AVF450 is a high power common base bipolar transistor. It is designed for pulse applications for TACAN in 1030-1-90 MHz band. A 4x .062 x 45° 2xB C F E D G I FEATURES:


    Original     		PDF AVF450 AVF450 ASI10575 D 1803 TRANSISTOR TRANSISTOR 1003 1034 transistor TACAN ASI10575 395 transistor transistor b 1166

    HVV1011-600

    Abstract: hvvi 1090MHZ
    Text: HVV1011-600 Preliminary Datasheet L-Band High Power Pulsed Transistor 50µs Pulse Width, 2% Duty Cycle For 1030-1090MHz IFF/TPR/TCAS Applications DESCRIPTION PACKAGE The high power HVV1011-600 device is a high voltage silicon enhancement mode RF transistor


    Original     		PDF HVV1011-600 1030-1090MHz HVV1011-600 HV800 MIL-STD-883, EG-01-PO15X4 hvvi 1090MHZ

    a 103 m Transistor

    Abstract: A 103 TRANSISTOR transistor PD j6 1030 mhz transistor j6 PH1090-75L f103 TRANSISTOR 75
    Text: PH1090-75L AVIONICS PULSED POWER TRANSISTOR 75 WATTS, 1030 - 1090 MHz, 250µs PULSE, 10% DUTY M/A-COM PHI, INC. FEATURES OUTLINE DRAWING • Designed for Pulsed Avionics Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration


    Original     		PDF PH1090-75L DS181 a 103 m Transistor A 103 TRANSISTOR transistor PD j6 1030 mhz transistor j6 PH1090-75L f103 TRANSISTOR 75

    ASI10573

    Abstract: AVF350
    Text: AVF350 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: A .0 2 5 x 4 5 ° The ASI AVF350 is a high power Class C transistor, designed for Avionics Applications in 1030-1090 MHz. ØD C E F G FEATURES: H • Internal Input/Output Matching Networks


    Original     		PDF AVF350 AVF350 ASI10573 ASI10573

    1030-1

    Abstract: PH1090-15L
    Text: PH1090-15L AVIONICS PULSED POWER TRANSISTOR 15 WATTS, 1030 - 1090 MHz, 250µs PULSE, 10% DUTY M/A-COM PHI, INC. FEATURES OUTLINE DRAWING • Designed for Pulsed Avionics Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration


    Original     		PDF PH1090-15L DS180 1030-1 PH1090-15L

    MDS60L

    Abstract: MDS60 1090mhz 1030MHz-1090MHz
    Text: MDS60L 60 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 The MDS60L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes a double input prematch for broadband performance.


    Original     		PDF MDS60L MDS60L 56653X) 1030MHz 1090MHz MDS60 1090mhz 1030MHz-1090MHz

    MDS60L

    Abstract: 1030MHz-1090MHz
    Text: MDS60L 60 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 The MDS60L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes a double input prematch for broadband performance.


    Original     		PDF MDS60L MDS60L 56653X) 1030MHz 1090MHz 1030MHz-1090MHz

    1030-1090MHz

    Abstract: 4884 SM200 DS01A
    Text: HVV1011-035 L-Band High Power Pulsed Transistor 1030-1090MHz, 50µs, 5% Duty For TCAS and Mode-S Applications DESCRIPTION PACKAGE The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating


    Original     		PDF HVV1011-035 1030-1090MHz, HVV1011-035 429-HVVi EG-01-DS01A 1030-1090MHz 4884 SM200 DS01A

    1030

    Abstract: MDS170L 1030 PULSED
    Text: MDS170L 170 Watts, 36 Volts, Pulsed Avionics 1030/1090 MHz GENERAL DESCRIPTION The MDS170L is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030 - 1090 MHz. The transistor includes input and output prematch for broadband performance. The


    Original     		PDF MDS170L MDS170L 25oC2 1030 1030 PULSED

    1090

    Abstract: TPR175 transistor 388 DSA0039087 common base transistor
    Text: TPR175 NPN SILICON RF-MICROWAVE POWER TRANSISTOR PACKAGE STYLE DESCRIPTION: The ASI TPR175 is a common base transistor Designed for pulsed systems in the frequency band 1030-1090 MHz. FEATURES: • Common Base • Internal Matching Network • PG = 8.0 dB at 175 W/1090 MHz


    Original     		PDF TPR175 TPR175 1090 transistor 388 DSA0039087 common base transistor

    MDS400

    Abstract: No abstract text available
    Text: MDS400 400 Watts Pk, 45 Volts, 32µs, 2% Avionics 1030-1090 MHz GENERAL DESCRIPTION CASE OUTLINE The MDS400 is a COMMON BASE transistor capable of providing 400 Watts Peak, Pulsed, RF Output Power over the band 1030-1090 MHz. The transistor includes double input prematching for full broadband capability. Gold


    Original     		PDF MDS400 MDS400

    MDS150

    Abstract: max15020 6020V
    Text: MDS150 150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 The MDS150 is a high power COMMON BASE bipolar transistor. It is designed for MODE-S systems in the 1030 - 1090 MHz frequency band. The transistor includes input prematch for broadband performance. The device has


    Original     		PDF MDS150 MDS150 max15020 6020V

    1030 mhz

    Abstract: TPR700 700 v power transistor
    Text: TPR 700 700 Watts, 50 Volts, Pulsed Avionics 1030 – 1090 MHz GENERAL DESCRIPTION The TPR 700 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input


    Original     		PDF 25oC2 TPR700 1030 mhz TPR700 700 v power transistor

    Untitled

    Abstract: No abstract text available
    Text: MDS70 70 Watts, 50 Volts, Pulsed Avionics 1030 - 1090MHz GENERAL DESCRIPTION CASE OUTLINE 55CX, STYLE 1 The MDS70 is a COMMON BASE bipolar transistor. It is designed for MODE S pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor


    Original     		PDF MDS70 1090MHz MDS70 25oC2 150oC 200osite

    Untitled

    Abstract: No abstract text available
    Text: A$A Avionics Pulsed Power Transistor PH 1090-30S Preliminary 30 Watts, 1030-1090 MHz, 10 |is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


    OCR Scan     		PDF 1090-30S 5b422G5 GQG12D5

    TRANSISTOR HBA

    Abstract: 1035 transistor transistor A 1011 Capacitor 4.7 uf ss1090 ss-1090 electrolytic capacitor 47 1090 ATC100A PH1090-350L
    Text: PH1090-350L M/A-OOM Avionics Pulsed Power Transistor - 350 Watts, 1030-1090 MHz, 250|is Pulse, 10% Duty /MOCOVI ^ M RF & Microwave Products Outline Drawing1 Description M/A-COM’s PH1090-350L is a silicon bipolar NPN power transistor intended for use in L-band, 1.2 - 1.4 GHz avionics


    OCR Scan     		PDF PH1090-350L PH1090-350L 250ns TT47M63A ATC100A TRANSISTOR HBA 1035 transistor transistor A 1011 Capacitor 4.7 uf ss1090 ss-1090 electrolytic capacitor 47 1090

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    transistor 1047

    Abstract: transistor 931 transistor 1047 voltage rating 1090 ATC100A PH1090-550S transistor 1207 l0111
    Text: PH1090-550S M/A-OOM Avionics Pulsed Power Transistor - 550 Watts, 1030-1090 MHz, 10 is Pulse, 1% Duty /MOCOVI ^ M RF & Microwave Products Outline Drawing1 Description M /A -C O M ’ s P H 1090-550S is a silicon bipolar NPN transistor intended for use in L-band, 1.2 - 1.4 GHz avionics equipment


    OCR Scan     		PDF PH1090-550S PH1090-550S 10jaS) ATC100A transistor 1047 transistor 931 transistor 1047 voltage rating 1090 transistor 1207 l0111

    yb 0d

    Abstract: No abstract text available
    Text: Aß Avionics Pulsed Power Transistor PH 1090-400S Preliminary 400 Watts, 1030-1090 MHz, 10 [is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


    OCR Scan     		PDF 1090-400S yb 0d

    Untitled

    Abstract: No abstract text available
    Text: A/jÙi Avionics Pulsed Power Transistor PH 1090-75S Preliminary 75 Watts, 1030-1090 MHz, 10 is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


    OCR Scan     		PDF 1090-75S b42205

    Untitled

    Abstract: No abstract text available
    Text: Aß Avionics Pulsed Power Transistor PH 1090-15S Preliminary 15 Watts, 1030-1090 MHz, 10 jis Pulse, 1% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration


    OCR Scan     		PDF 1090-15S 5b422D5

    lc125

    Abstract: No abstract text available
    Text: Aß Avionics Pulsed Power Transistor PH 1090-6S Preliminary 6 Watts, 1030-1090 MHz, 10 is Pulse, 1% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration


    OCR Scan     		PDF 1090-6S Sb42ED5 lc125

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ObE D N AMER PHILIPS/DISCRETE 8 6 0 1 1 9 3 6 D • bb53T31 0014174 4 ■ r - BLY91A I V i. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 28 V . The transistor is resistance stabilized and


    OCR Scan     		PDF bb53T31 BLY91A