A933
Abstract: A933 S BA7626F BA7626FS SSOP-A16 a933 transistor
Text: High performance video signal switcher Five inputs Dual Circuits Video Signal Switchers BA7626F,BA7626FS No.11066EAT01 ●Description The BA7626F/FS is a 5-input video signal switching circuit with a broadband 6 dB amplifier that was developed for AV amplifier input switching. Just by devising a transistor buffer in the output, player switching of two VCR or other videotape
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BA7626F
BA7626FS
11066EAT01
BA7626F/FS
R1120A
A933
A933 S
BA7626FS
SSOP-A16
a933 transistor
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R5524N004A
Abstract: RL56 R5524N R5524
Text: R5524N SERIES USB HIGH-SIDE POWER SWITCH NO.EA-188-110622 OUTLINE The R5524N series is CMOS-based high-side MOSFET switch ICs for Universal Serial Bus USB applications. Using Nch FET as a switching transistor, low ON resistance (Typ.100mΩ) and reverse current
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R5524N
EA-188-110622
Room403,
Room109,
10F-1,
R5524N004A
RL56
R5524
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CNY70
Abstract: No abstract text available
Text: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E D Features • •
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CNY70
CNY70
2002/95/EC
2002/96/EC
18-Jul-08
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sensor cny70
Abstract: CNY70 ir sensing circuit using CNY70
Text: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E D Features • •
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CNY70
CNY70
2002/95/EC
2002/96/EC
08-Apr-05
sensor cny70
ir sensing circuit using CNY70
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Untitled
Abstract: No abstract text available
Text: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E D Features • •
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CNY70
CNY70
2002/95/EC
2002/96/EC
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area CNY70, a compact reflective optical sensor incudes IR-Emitter and Phototransistor with daylight suppression filter. Recommended range of operation is from
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CNY70
CNY70,
2002/95/EC
2002/96/EC
08-Apr-05
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ALD1105PBL
Abstract: ALD1105 inverter 4v to 12v n channel mosfet 500 mA 400 v
Text: ADVANCED LINEAR DEVICES, INC. ALD1105 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are
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ALD1105
ALD1105
ALD1116
ALD1117
ALD1103.
CERDIP-14
ALD1105PBL
inverter 4v to 12v
n channel mosfet 500 mA 400 v
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5V GATE TO SOURCE VOLTAGE MOSFET
Abstract: cascode mosfet current mirror Monolithic Transistor Pair mosfet pair ALD1103 ALD1105 ALD1116 ALD1117 differential pair cascode CMOS differential amplifier cascode
Text: ADVANCED LINEAR DEVICES, INC. ALD1105 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET GENERAL DESCRIPTION APPLICATIONS The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are
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ALD1105
ALD1105
ALD1116
ALD1117
ALD1103.
5V GATE TO SOURCE VOLTAGE MOSFET
cascode mosfet current mirror
Monolithic Transistor Pair
mosfet pair
ALD1103
differential pair cascode
CMOS differential amplifier cascode
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PMV31XN
Abstract: C3137
Text: PMV31XN µTrenchMOS extremely low level FET Rev. 01 — 26 February 2003 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV31XN in SOT23. 2. Features
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PMV31XN
PMV31XN
MSB003
MBB076
C3137
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP3N50E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable
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PHP3N50E
PHX2N60E
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP3N50E GENERAL DESCRIPTION PHX2N60E QUICK REFERENCE DATA SYMBOL N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high
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PHP3N50E
PHX2N60E
OT186A
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ld2sc
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchWIOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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BUK9514-55
T0220AB
ld2sc
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transistor c1945
Abstract: C1945 c1946 A 2531 IC A 2531 transistor c1946 Insulation25 C1949 transformer
Text: mm QUALITY • [ techn o lo g ies DUAL HIGH-SPEED TRANSISTOR OPTOCOUPLERS HCPL-2530 HCPL-2531 PACKAGE DIMENSIONS DESCRIPTIOI The HCPL-2530/31 dual optocouplers contain two completely separated 700 nm GaAsP LED emitters each optically coupled to a high speed photodetector transistor.
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HCPL-2530
HCPL-2531
HCPL-2530/31
CMR--10
insulation--2500
C1952
transistor c1945
C1945
c1946
A 2531
IC A 2531
transistor c1946
Insulation25
C1949 transformer
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d1106
Abstract: LD1116 LD 1106
Text: E> A dvanced L in e a r ALD1106/ALD1116 D e v ic e s , In c . QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS The A LD 1106/A LD 1116 are m onolithic quad/dual N-channel enhance m entm ode m atched M O SFET transistor arrays intended fo r a broad range
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ALD1106/ALD1116
1106/A
106/A
106/ALD1116
d1106
LD1116
LD 1106
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Untitled
Abstract: No abstract text available
Text: HD6631OT- TFT-Type LCD Driver for VDT Description The HD66310T is a drain bus driver for TFT-type (thin film transistor) LCDs. It receives 3-bit digital data for one dot, selects a level from eight voltage levels, and outputs the level to an LCD.
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HD6631OT---------------
HD66310T
HD66310T00)
HD66310T0015)
HD66310T
04iaclQB
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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2103F
Abstract: No abstract text available
Text: T O SH IB A RN2101 F~RN2106F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2101F, RN2102F, RN2103F RN2104F, RN2105F, RN2106F SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • With Built-in B ias Resistors •
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RN2101
RN2106F
RN2101F,
RN2102F,
RN2103F
RN2104F,
RN2105F,
1101F
1106F
2103F
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gs 1117 ax
Abstract: 1117 S Transistor Transistor b 1117 c 1117 ald 1106 LD1103 ic 1117
Text: I f\ A dvanced L in e a r D e v ic e s , In c . J ALD1107/ALD1117 QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY APPLICATIONS GENERAL DESCRIPTION The ALD 1107/ALD 1117 are m onolithic quad/dual P-channel enhance m entm ode matched M O SFET transistor arrays intended fo r a broad range
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ALD1107/ALD1117
1107/ALD
107/A
ALD1106
ALD1106
1107/A
ALD1101
LD1102
LD1103)
gs 1117 ax
1117 S Transistor
Transistor b 1117
c 1117
ald 1106
LD1103
ic 1117
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GG3C
Abstract: NDP405A cq 532 stablizer circuit diagram NDP405B NDP406A NDP406B NDP405 110981
Text: a t i o n a Semiconductor l October 1991 NDP405A/NDP405B, NDP406A/NDP406B N-Channel Enhancement Mode Power Field Effect Transistor G e n e ra l D e s c r ip tio n F e a tu re s These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high
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NDP405A/NDP405B,
NDP406A/NDP406B
0V-00)
GG3C
NDP405A
cq 532
stablizer circuit diagram
NDP405B
NDP406A
NDP406B
NDP405
110981
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HD66310T
Abstract: lcd 8x2 supply voltage 3.3 volt
Text: H D 66310T - TFT-Type LCD D river fo r VD T Description The HD66310T is a drain bus driver for TFT-type (thin film transistor) LCDs. It receives 3-bit digital data for one dot, selects a level from eight voltage levels, and outputs the level to an LCD.
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66310T
HD66310T00)
HD66310T0015)
HD66310T
HD66310T
lcd 8x2 supply voltage 3.3 volt
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N1106
Abstract: No abstract text available
Text: TOSHIBA RN1101-RN1106 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1101, RN1102, RN1103, RN1104, RN1105, RN1106 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. 1 .6 Í 02 0.8 ± 0.1 "O oo +I •
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RN1101-RN1106
RN1101,
RN1102,
RN1103,
RN1104,
RN1105,
RN1106
RN2101
RN2106
RN1101
N1106
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2SK3265
Abstract: No abstract text available
Text: T O S H IB A 2SK3265 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK3265 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • •
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2SK3265
2SK3265
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