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    TRANSISTOR A 2761 Search Results

    TRANSISTOR A 2761 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A 2761 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5211DW1T1 SERIES Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a


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    MUN5211DW1T1 MUN5211DW1T1 T-363 b3b72SS MUN5215DW1T1 3b7255 PDF

    2761 l transistor

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5211DW1T1 SERIES Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network M otorola P referred D evices The BRT Bias Resistor Transistor contains a single transistor with a


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    MUN5211DW1T1 T-363 MUN5215DW1T1 MUN5216DW1T1 2761 l transistor PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    phototransistor sensitive to green light

    Abstract: photoelectric burglar alarm silicon solar cell phototransistor sensitive to yellow light photo resistor light APPLIED SOLAR ENERGY solar cell Solar sun sensor light sensitive burglar alarm project silicon photocell
    Text: CADMIUM SULPHIDE PHOTOCIELL SILICON SOLAR CELL PHOTO TRANSISTOR DISPLAY AND OPTO ELECTRONIC D EVICES 276-116 CADMIUM SULPHIDE PHOTOCELL GENERAL DESCRIPTION A c a d m i u m s u l p h i d e p h o t o c o l l i s a l i ghl v a r i a b l e r e s i s t o r w h i c h i s m o s t


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    2SC2742

    Abstract: 2749 n2761
    Text: - 5 - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    500MHz, 7-C-25X) V-25T! Tc-25 2SC2742 2749 n2761 PDF

    mcr-s-10-50-ui-dci

    Abstract: hall current transducer 5A MCR-S-10-50-UI-SW-DCI 2814728 24v relays phoenix sw dip-10 MCR-S10-50-UI-SW-DCI-NC TRANSISTOR SUBSTITUTION OUT04 MCR-S-10-50-UI-SW-DCI-NC
    Text: MCR-S-…-DCI Current Transducer up to 55 A, Programmable and Configurable INTERFACE Data Sheet 1 PHOENIX CONTACT - 06/2006 Description MCR-S-…-DCI current transducers offer users the option of ordering a preconfigured device, configuring the device themselves via DIP switches or programming it with


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    MCR-S-10-50-UI-DCI hall current transducer 5A MCR-S-10-50-UI-SW-DCI 2814728 24v relays phoenix sw dip-10 MCR-S10-50-UI-SW-DCI-NC TRANSISTOR SUBSTITUTION OUT04 MCR-S-10-50-UI-SW-DCI-NC PDF

    3D24N2Y

    Abstract: transistor sc 238 9008 transistor transistor sc 308 SAL 41 transistor 9013 1008 transistor X2C70 transistor D 1002 3D24N
    Text: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB R U N O F U N K U N D FE R N SE H E N AUSGABE: M m ri r a d i o - t e i e v i s i o n l 1 9 8 4 14-16 S e ite 1 - 1 2 Mitteilung aus dem VSB RFT Industrievertrieb R.u.F. Leipzig Serviceinformationen zuin neuen Auto-Stereo-Kassettenabspielgerät


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    Ge1012 3D24N2Y transistor sc 238 9008 transistor transistor sc 308 SAL 41 transistor 9013 1008 transistor X2C70 transistor D 1002 3D24N PDF

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


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    DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148 PDF

    2761 l transistor

    Abstract: transistor k 2761 S921TS a 2761 to-220 k 2761 transistor ic 921 2761 a 14A3DIN TRANSISTOR BC 239 c transistor A 2761
    Text: TELEFUNKEN ELECTRONIC 17E D fi'îEOQ'ïb ODOTbSB M • ALG6 m S 921TS • S 923 TS r - 3i-i-r Silicon PNP Epitaxial Planar RF Transistors Applications; For telephone sets, telecommunication circuits, video driver and power stages in TV receivers and monitors and general in circuits with high supply voltage


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    921TS 15A3DIN E--07 2761 l transistor transistor k 2761 S921TS a 2761 to-220 k 2761 transistor ic 921 2761 a 14A3DIN TRANSISTOR BC 239 c transistor A 2761 PDF

    A3064LKA

    Abstract: TRANSISTOR 3064
    Text: Data Sheet 27612.21 3064 HALL-EFFECT GEAR-TOOTH SENSOR —AC COUPLED X The A3064LKA ac-coupled Hall-effect gear-tooth sensor is a monolithic integrated circuit that switches in response to changing differential magnetic fields created by moving ferrous targets. This


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    A3064LKA PH-011-1 MH-015 TRANSISTOR 3064 PDF

    DC gear motors transfer function

    Abstract: No abstract text available
    Text: PRELIMINARY INFORMATION subject to change without notice April 27, 2001 X Data Sheet 27612.21 3064 HALL-EFFECT GEAR-TOOTH SENSOR —AC COUPLED The A3064LKA ac-coupled Hall-effect gear-tooth sensor is a monolithic integrated circuit that switches in response to changing


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    A3064LKA MH-015 DC gear motors transfer function PDF

    transistor k 2761

    Abstract: k 2761 transistor poly silicon resistor C1230 hfe 118 transistor 338 transistor A 2761 poly1 poly2 resistor C1206 cox 15um
    Text: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage


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    C1230 C1230 transistor k 2761 k 2761 transistor poly silicon resistor hfe 118 transistor 338 transistor A 2761 poly1 poly2 resistor C1206 cox 15um PDF

    transistor k 2761

    Abstract: C1230 C1206
    Text: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage


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    C1230 C1230 C1230-4-98 transistor k 2761 C1206 PDF

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


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    C1206

    Abstract: No abstract text available
    Text: ISO 9001 Registered Process C1206 BiCMOS 1.2µm 6.4GHz Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage


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    C1206 C1206 C1206-4-98 PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor PDF

    C1206

    Abstract: C1221 100x100um
    Text: ISO 9001 Registered Process C1221 BiCMOS 1.2µm High Resistance Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage


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    C1221 C1221 C1221-4-98 C1206 100x100um PDF

    C1206

    Abstract: C1221
    Text: ISO 9001 Registered Process C1221 BiCMOS 1.2µm High Resistance Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage


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    C1221 C1221 C1206 PDF

    transistor k 2761

    Abstract: C1206 TRANSISTOR C1206
    Text: ISO 9001 Registered Process C1206 BiCMOS 1.2µm 6.4GHz Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage


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    C1206 C1206 C1206-4-98 transistor k 2761 TRANSISTOR C1206 PDF

    thermistor 10 SP

    Abstract: 275-217 Diode 1N40 12 volt relay SPDT relay 12 Volt 1N4001 RELAY 47K variable resistor Q1 2N3904 276-007 2N3904
    Text: www.thermistor.com Temperature Controller POWER SUP PLY R1 47K RT1 TIVE POSI U1A 1 3 + 2 C1 FD M 2N3904 typ 10 ical 1 Meg ITIVE R4 PSE OLECT VALU WER E PLY 2 K1 5 WE PO PLY UP RS C10MFD 1 DT ER 2 R 1 TO RT MIS ER TH 3 + - EN OP ED OS CL 8 8 4 4 1 2 3 N O MM


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    2N3904 2N3904. LM741CN. thermistor 10 SP 275-217 Diode 1N40 12 volt relay SPDT relay 12 Volt 1N4001 RELAY 47K variable resistor Q1 2N3904 276-007 PDF

    "battery protection"

    Abstract: hall effect sensor 4 pin transistor 010C FH-008 Hall Effect 3 pin ugn temperature sensor IC tooth hall Sensor diagram UGN HALL UGS3060KA FILTER Y5S
    Text: HALL-EFFECT GEAR-TOOTH SENSORS—AC COUPLED Data Sheet 27612.20 3059 AND 3060 3059 AND 3060 HALL-EFFECT GEAR-TOOTH SENSORS —AC COUPLED X The UGN/UGS3059KA and UGN/UGS3060KA ac-coupled Halleffect gear-tooth sensors are monolithic integrated circuits that switch


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    UGN/UGS3059KA UGN/UGS3060KA PH-011 "battery protection" hall effect sensor 4 pin transistor 010C FH-008 Hall Effect 3 pin ugn temperature sensor IC tooth hall Sensor diagram UGN HALL UGS3060KA FILTER Y5S PDF

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


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    0.01 uF non polarized capacitor

    Abstract: No abstract text available
    Text: 3059 AND 3060 Data Sheet 27612.20* 3059 AND 3060 HALL-EFFECT GEAR-TOOTH SENSORS —AC COUPLED HALL-EFFECT GEAR-TOOTH SENSORS —AC COUPLED X The UGN/UGS3059KA and UGN/UGS3060KA ac-coupled Halleffect gear-tooth sensors are monolithic integrated circuits that switch


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    UGN/UGS3059KA UGN/UGS3060KA PH-011 0.01 uF non polarized capacitor PDF