Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR A 42 Search Results

    TRANSISTOR A 42 Result Highlights (5)

    Part
    ECAD Model
    Manufacturer
    Description
    Download
    Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A 42 Datasheets Context Search

    Catalog Datasheet
    MFG & Type
    Document Tags
    PDF

    Mitsubishi M54564

    Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
    Text: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide


    Original
    A/20V 16P2Z 16pin 225mil 05MIN. 20pin 300mil 20P2N 20P2E Mitsubishi M54564 M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p PDF

    Untitled

    Abstract: No abstract text available
    Text: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to


    Original
    NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D PDF

    N5 npn transistor

    Abstract: N5 transistor SC-88 419B-02 NSM46211DW6T1G NSM46211DW6
    Text: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to


    Original
    NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D N5 npn transistor N5 transistor SC-88 419B-02 NSM46211DW6 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original
    DTA143EE 416/SC PDF

    Untitled

    Abstract: No abstract text available
    Text: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to


    Original
    NSM11156DW6T1G NSM11156DW6T1G SC-88/SOT-363 NSM11156DW6/D PDF

    419B-02

    Abstract: NSM11156DW6T1G marking .544 sot363
    Text: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to


    Original
    NSM11156DW6T1G NSM11156DW6T1G SC-88/SOT-363 NSM11156DW6/D 419B-02 marking .544 sot363 PDF

    6aa marking

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original
    DTA114YE 416/SC 6aa marking PDF

    transistor sc59 marking

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a


    Original
    DTC114TE DTC114TE 416/SC transistor sc59 marking PDF

    6aa marking

    Abstract: 327 SOT-6
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114YE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a


    Original
    DTC114YE DTC114YE 416/SC 6aa marking 327 SOT-6 PDF

    419B-02

    Abstract: NSM21356DW6T1G SC marking code NPN transistor
    Text: NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21356DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series


    Original
    NSM21356DW6T1G NSM21356DW6T1G SC-88/SOT-363 NSM21356DW6/D 419B-02 SC marking code NPN transistor PDF

    419B-02

    Abstract: NSM21156DW6T1G marking .544 sot363 NSM21
    Text: NSM21156DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21156DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series


    Original
    NSM21156DW6T1G NSM21156DW6T1G SC-88/SOT-363 NSM21156DW6/D 419B-02 marking .544 sot363 NSM21 PDF

    Untitled

    Abstract: No abstract text available
    Text: NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21356DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series


    Original
    NSM21356DW6T1G NSM21356DW6T1G SC-88/SOT-363 NSM21356DW6/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NSM21156DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21156DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series


    Original
    NSM21156DW6T1G NSM21156DW6T1G SC-88/SOT-363 NSM21156DW6/D PDF

    NSB1706DMW5T1G

    Abstract: No abstract text available
    Text: NSB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original
    NSB1706DMW5T1G NSB1706DMW5T1G, SC-88A NSB1706DMW5T1/D NSB1706DMW5T1G PDF

    Untitled

    Abstract: No abstract text available
    Text: NSB1706DMW5T1G, NSVB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original
    NSB1706DMW5T1G, NSVB1706DMW5T1G NSB1706DMW5T1/D PDF

    marking 88A

    Abstract: marking code 88A NSB1706DMW5T1 NSB1706DMW5T1G NSB1706 u6 transistor 88a marking
    Text: NSB1706DMW5T1 Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original
    NSB1706DMW5T1 NSB1706DMW5T1, SC-88A NSB1706DMW5T1/D marking 88A marking code 88A NSB1706DMW5T1 NSB1706DMW5T1G NSB1706 u6 transistor 88a marking PDF

    SGA9289Z

    Abstract: MARKING P2Z SGA-9289z SGA9289ZSR rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9
    Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This


    Original
    SGA9289Z SGA9289Z OT-89 SGA9289Z" SGA9289ZSQ SGA9289ZSR SGA9289Z-EVB1 MARKING P2Z SGA-9289z rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9 PDF

    SGA9289Z

    Abstract: No abstract text available
    Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This


    Original
    SGA9289Z OT-89 SGA9289Z SGA9289Zâ SGA9289ZSQ SGA9289ZSR SGA9289Z-EVB1 PDF

    4420 Transistor

    Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
    Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


    Original
    ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748 PDF

    NTE198

    Abstract: No abstract text available
    Text: NTE198 Silicon NPN Transistor High Voltage Power Transistor Description: The NTE198 is a high voltage silicon NPN power transistor in a TO220 type package designed for use as a line operated audio output amplifier, switchmode power supply driver, and other switchmode


    Original
    NTE198 NTE198 PDF

    4420 Transistor

    Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
    Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


    Original
    ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23 PDF

    300V switching transistor

    Abstract: Vbe 40 transistor QCA300BA60
    Text: TRANSISTOR MODULE Hi- QCA300BA60 UL;E76102 M QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is


    Original
    QCA300BA60 E76102 QCA300BA60 200ns) 400mA 300V switching transistor Vbe 40 transistor PDF

    QCA300BA60

    Abstract: 675g M6 transistor
    Text: TRANSISTOR MODULE(Hi-β) QCA300BA60 UL;E76102 (M) QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr:200ns . The mounting base of the module is


    Original
    QCA300BA60 E76102 QCA300BA60 trr200ns) 113max IC300A, VCEX600V hFE750 Ic300A 675g M6 transistor PDF

    2n4261

    Abstract: 2N426 M1515
    Text: 2N 4261 Transistor by SEMICOA Semiconductors http://semicoa.com/transist/2n426 i .htm a semicoR SEMICONDUCTORS 2N4261 Transistor Case: TO-72 Qual Level: JAN - JANS Chip Geometry: 0014 Polarity: PNP The 2N4261 is a fast-switching, small signal silicon transistor.


    OCR Scan
    com/transist/2n426 2N4261 MIL-PRF-19500/51 com/transist/2n4261 2N426 M1515 PDF