Untitled
Abstract: No abstract text available
Text: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
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NE58219
2SC5004
2SC5004
NE58219-A
2SC5004-A
NE58219-T1-A
2SC5004-T1-A
perfor516
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NEC JAPAN 237 521 02
Abstract: transistor zo 607 2SC5004
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2SC5004
2SC5004
NEC JAPAN 237 521 02
transistor zo 607
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transistor zo 607
Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
Text: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
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NE58219
2SC5004
2SC5004
NE58219
NE58219-T1
2SC5004-T1
transistor zo 607
zo 607 MA
2SC5004-T1
NE58219-T1
nec 237 521 02
NE582
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TD2400
Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Text: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5007
2SC5007
TD2400
transistor zo 607
2SC5007-T1
NEC 1555
AK-804 164-1-1
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Untitled
Abstract: No abstract text available
Text: TLP291 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP291 Power Supplies Programmable Controllers Hybrid ICs Unit: mm TLP291 consists of photo transistor, optically coupled to a gallium arsenide infrared emitting diode. TLP291 is housed in the SO4 package, very small
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TLP291
TLP291
3750Vrms)
11-3C1
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MJE2955
Abstract: 2N3645 bc557 BC307 BC212
Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu The facturer
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O-92SP
O-237
O-220
O-928>
iO051
MJE2955
2N3645
bc557
BC307
BC212
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2n5863
Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
Text: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V
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0QD007fl
T0-102
2n5863
MJ2965
TO61 package
12J5
2N8307
2n3713
2N4901
2n3447
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2508DF
Abstract: bu2508df
Text: N A PIER P H I L I P S / D I S C R E T E bbS3T31 0026357 673 * A P X b'lE D Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
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bbS3T31
BU2508DF
002fl3b2
OT199;
2508DF
bu2508df
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NEC 1357
Abstract: LA 8873 TRANSISTOR C 4460
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the
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2SC5004
2SC5004
NEC 1357
LA 8873
TRANSISTOR C 4460
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D 1437 transistor
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the
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2SC5004
D 1437 transistor
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5N520
Abstract: 5n52 2N3268 2N1938 2n60n 2N3265 5n5202 606J 2N4866 2N6278
Text: GENERAL TRANSISTOR CORP EME D • 3120001 000Q070 3 ■ 1^3 3 ^ 0 / General Transistor Corporation CASE 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 lc<MAX) = 2 0 to 6 0 A VcEO(SUS) a 4 Û-3 0 0 V
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0-300V
2N1938
2N1937
2N3265
2N6260
2N6261
2N6315
2N6317
2N6316
2N6318
5N520
5n52
2N3268
2N1938
2n60n
2N3265
5n5202
606J
2N4866
2N6278
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2N2464
Abstract: transistor 2n2270 2N6369 D 756 transistor
Text: GENERAL TRANSISTOR CORP 2ME D • BTaflODl 00QD074 0 ■ General Transistor Corporation "T 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL S IG N A L TRANSISTORS NPN General Purpose Typ» No,
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00QD074
100TT
T0-102
2N2464
transistor 2n2270
2N6369
D 756 transistor
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marking QE
Abstract: No abstract text available
Text: Central CZT751 Semiconductor Corp. SURFACE MOUNT PNP HIGH CURRENT SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT751 type is a PNP Silicon Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high
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CZT751
OT-223
100MHz
OT-223
14-November
marking QE
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE » bb53^31 0D26D50 775 • APX PN2369 PN2369A SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor in plastic TO-92 envelope intended fo r switching applications. Q UICK REFERENCE D A T A Collector-em itter voltage
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0D26D50
PN2369
PN2369A
bbS3T31
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic futl-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK446-800A/B
BUK446
-800A
-800B
OT186
II-60
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transistor NEC B 617
Abstract: nec. 5.5 473
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5007
2SC5007
transistor NEC B 617
nec. 5.5 473
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Transistor 2SA 2SB 2SC 2SD
Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)
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O-126
O-126
T0-220AB,
O-220
2SC4544
2SC4448
2SC3612
2BC4201
Transistor 2SA 2SB 2SC 2SD
S-AU27M
S2000A inverter
P4005
S-AV21H
S-AU27
3182N
2sb 834 transistor
Transistor 2SC4288A
Drive IC 2SC3346
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lg 7445
Abstract: TLP621-2
Text: T O SH IB A TLP621,TLP621-2,TLP621-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TIPK71 TIPfi?1-7 TIPR71-A • m m g m g ■ » ■ PRO G RAM M ABLE CONTROLLER A C /D C -IN PU T MODULE SOLID STATE RELAY The T O S H IB A TLP621, -2, and -4 consists of a photo-transistor
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TLP621
TLP621-2
TLP621-4
TIPK71
TIPR71-A
TLP621,
TLP621-4
lg 7445
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT11F GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.
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BUT11F
OT186
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK454-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effeet power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,
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BUK454-200A/B
BUK474-200A/B
-SOT186A
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK454-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,
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BUK454-200A/B
BUK474-200A/B
BUK474
-200A
-200B
-SOT186A
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PDF
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2SC5012-T1
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •
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2SC5012
2SC5012-T1
2SC5012-T2
2SC5012-T1
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TRANSISTOR GB 558
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •
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2SC5013
2SC5013-T1
2SC5013-T2
TRANSISTOR GB 558
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