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    TRANSISTOR A006 Search Results

    TRANSISTOR A006 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A006 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A008 amplifier TRANSISTOR

    Abstract: FET transistors with s-parameters high power FET transistor s-parameters transistor A006 Hewlett-Packard transistor microwave 1084 transistor RF Transistor s-parameter hewlettpackard rf transistor A004R RF transistors with s-parameters
    Text: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf


    Original     		PDF 5091-8350E 5966-0935E AT-41511 5964-3853E AT-32063 5966-0781E A008 amplifier TRANSISTOR FET transistors with s-parameters high power FET transistor s-parameters transistor A006 Hewlett-Packard transistor microwave 1084 transistor RF Transistor s-parameter hewlettpackard rf transistor A004R RF transistors with s-parameters

    a006

    Abstract: less miserable
    Text: Mounting Considerations for Packaged Microwave Semiconductors Application Note A006 Introduction Soldering There are three kinds of connections that must be made when a device is mounted onto a circuit board. A mechanical attachment is needed to physically hold the


    Original     		PDF 5091-8696E a006 less miserable

    Indium tin oxide transmission

    Abstract: a006 transistor A006
    Text: Mounting Considerations for Packaged Microwave Semiconductors Application Note A006 Introduction There are three kinds of connections that must be made when a device is mounted onto a circuit board. A mechanical attachment is needed to physically hold the device to the circuit. Electrical attachments are


    Original     		PDF 5091-8696E Indium tin oxide transmission a006 transistor A006

    transistor A006

    Abstract: bipolar transistor s-parameter a006 A004R Catalog Bipolar Transistor A008 AN1084 RF Transistor s-parameter A008 amplifier TRANSISTOR A008 TRANSISTOR
    Text: Application Information The following application information is either published in this catalog or available from your local Hewlett-Packard sales office, authorized distributor, or representative. Technical information is also available on the WWW at: www.hp.com/go/rf


    Original     		PDF AT-41511 AN-1131 AT-32063 transistor A006 bipolar transistor s-parameter a006 A004R Catalog Bipolar Transistor A008 AN1084 RF Transistor s-parameter A008 amplifier TRANSISTOR A008 TRANSISTOR

    a006

    Abstract: AN-A004R
    Text: Mounting Considerations for Packaged Microwave Semiconductors Application Note A006 Introduction Soldering There are three kinds of connections that must be made when a device is mounted onto a circuit board. A mechanical attachment is needed to physically hold the


    Original     		PDF 5091-8696E AV02-2030EN a006 AN-A004R

    ATF-13484

    Abstract: ATF at 2.4 Ghz bipolar transistor 2.4 ghz s-parameter ATF pHEMT ATF-36163 ATF13136 amplifier TRANSISTOR 12 GHZ low noise design ATF 10136 bipolar transistor ghz s-parameter phemt biasing ATF-36077
    Text: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf


    Original     		PDF 5091-8350E 5966-0779E 5965-1235E ATF-36163 5965-5956E ATF-36077 5966-0783E ATF-36077 ATF-13484 ATF at 2.4 Ghz bipolar transistor 2.4 ghz s-parameter ATF pHEMT ATF13136 amplifier TRANSISTOR 12 GHZ low noise design ATF 10136 bipolar transistor ghz s-parameter phemt biasing ATF-36077

    ATF-13484

    Abstract: atf 36163 Low Noise Amplifier low noise design ATF 10136 A008 amplifier TRANSISTOR amplifier TRANSISTOR 12 GHZ ATF pHEMT ATF13484 A007 transistor atf Microwave GaAs FET catalogue
    Text: Application Information The following application information is either published in this catalog or available from your local Hewlett-Packard sales office, authorized distributor, or representative. Technical information is also available on the WWW at: www.hp.com/go/rf


    Original     		PDF ATF-10236 ATF-10136, ATF-13736, ATF-13484 ATF-21186 ATF-36163 ATF-36163 ATF-36077 ATF-13484 atf 36163 Low Noise Amplifier low noise design ATF 10136 A008 amplifier TRANSISTOR amplifier TRANSISTOR 12 GHZ ATF pHEMT ATF13484 A007 transistor atf Microwave GaAs FET catalogue

    handling of beam lead diodes

    Abstract: 4435 fet 9571 transistor Hewlett-Packard microwave pin diode transistor s2p A004R 5091-9074E 5964 fet a006 A001
    Text: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf


    Original     		PDF 5964-3902E handling of beam lead diodes 4435 fet 9571 transistor Hewlett-Packard microwave pin diode transistor s2p A004R 5091-9074E 5964 fet a006 A001

    atmel lot marking

    Abstract: ATMEL 634 AT35500 transistor WL 431 atmel h 306 AT89C51SND1C JESD22-A110 Q100 flash "high temperature data retention" mechanism 0.35uM STI
    Text: AT89C51SND1C QualPack Qualification Package AT89C51SND1C FLASH C51 Microcontroller MP3 Decoder AT89C51SND1C SEPTEMBER 2002 Rev. 0 – 2002 September 1 AT89C51SND1C QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


    Original     		PDF AT89C51SND1C AT89C51SND1C atmel lot marking ATMEL 634 AT35500 transistor WL 431 atmel h 306 JESD22-A110 Q100 flash "high temperature data retention" mechanism 0.35uM STI

    C51 Microcontroller

    Abstract: 7144 transistor equivalent ATMEL 634 atmel lot marking flash "high temperature data retention" mechanism failure rate TDDB JESD22-A110 T89C51CC01 T89C51CC02
    Text: T89C51CC01 QualPack Qualification Package T89C51CC01 CAN / FLASH C51 Microcontroller T89C51CC01 CAN / FLASH C51 Microcontroller JANUARY 2002 Rev. 0 – 2002 January 1 T89C51CC01 QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


    Original     		PDF T89C51CC01 T89C51CC01 C51 Microcontroller 7144 transistor equivalent ATMEL 634 atmel lot marking flash "high temperature data retention" mechanism failure rate TDDB JESD22-A110 T89C51CC02

    ATMEL 634

    Abstract: AT355 AT89C51RB2 AT89C51RC2 PDIL40 T89C51IC2
    Text: AT89C51RB2 / RC2 & T89C51IC2 QualPack Qualification Package AT89C51RB2 / RC2 & T89C51IC2 FLASH C51 Microcontrollers AT89C51RB2 / RC2 & T89C51IC2 June 2002 Rev. 1 – 2002 June 1 AT89C51RB2 / RC2 & T89C51IC2 QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


    Original     		PDF AT89C51RB2 T89C51IC2 T89C51IC2 ATMEL 634 AT355 AT89C51RC2 PDIL40

    AT89C51RD2 -um

    Abstract: AT89C51RD2 AT89C51E2 atmel package marking atmel at89c51ed2 AT89C51ED2 ATMEL 634 AT89C51ED2 UM AT89C5131 JESD22-A101
    Text: AT89C51RD2 / AT89C51ED2 QualPack Qualification Package AT89C51ED2 FLASH 8-bit C51 Microcontroller 64 Kbytes FLASH, 2 Kbytes EEPROM AT89C51RD2 / AT89C51ED2 JULY 2003 Rev. 0 – 2003 July 1 AT89C51RD2 / AT89C51ED2 QualPack 1 Table of contents 1 TABLE OF CONTENTS. 2


    Original     		PDF AT89C51RD2 AT89C51ED2 AT89C51ED2 AT89C51RD2 -um AT89C51E2 atmel package marking atmel at89c51ed2 ATMEL 634 AT89C51ED2 UM AT89C5131 JESD22-A101

    AT89C5131

    Abstract: JESD22-A118 T89C51CC01 T89C51AC2 JESD22-A101 Q100 T89C51AC2 TS16949 ATMEL package qualification
    Text: T89C51AC2 QualPack Qualification Package T89C51AC2 FLASH C51 Microcontroller with A/D Converter T89C51AC2 FLASH C51 Microcontroller OCTOBER 2003 Rev. 1– 2003 October 1 T89C51AC2 QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


    Original     		PDF T89C51AC2 T89C51AC2 AT89C5131 JESD22-A118 T89C51CC01 T89C51AC2 JESD22-A101 Q100 TS16949 ATMEL package qualification

    DAC 371-8

    Abstract: W588A080 a006 W588A009 W588A020 W588A003 W588A006 W588A012 winbond io W588A025
    Text: W588AXXX Data Sheet 8-BIT MCU WITH VOICE SYNTHESIZER PowerSpeechTM Series Table of Contents1. GENERAL DESCRIPTION . 2 2. FEATURES . 2


    Original     		PDF W588AXXX DAC 371-8 W588A080 a006 W588A009 W588A020 W588A003 W588A006 W588A012 winbond io W588A025

    MTBF calculation

    Abstract: AT89C5131 T89C51CC02 JESD22-A110 TSS463 JESD22-A101 JESD22-A118 Q100 TS16949 AT89C5114
    Text: T89C51CC02 QualPack Qualification Package T89C51CC02 CAN Networking with FLASH 8-bit C51 T89C51CC02 OCTOBER 2003 Rev. 1 – 2003 October 1 T89C51CC02 QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


    Original     		PDF T89C51CC02 T89C51CC02 MTBF calculation AT89C5131 JESD22-A110 TSS463 JESD22-A101 JESD22-A118 Q100 TS16949 AT89C5114

    W588A080

    Abstract: W588A003 W588A020 W588A015
    Text: W588AXXX Data Sheet 8-BIT MCU WITH VOICE SYNTHESIZER PowerSpeechTM Series Table of Contents1. GENERAL DESCRIPTION . 2 2. FEATURES . 2


    Original     		PDF W588AXXX W588A080 W588A003 W588A020 W588A015

    TQFP-80

    Abstract: AT83C51SND1C AT89C5131 T85C5121 JESD22-A101 JESD22-A110 Q100 TQFP80 TS16949 atmel 442
    Text: AT83C51SND1C QualPack Qualification Package AT83C51SND1C C51 Microcontroller MP3 Decoder AT83C51SND1C September 2003 Rev. 0 – 2003 September 1 AT83C51SND1C QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


    Original     		PDF AT83C51SND1C AT83C51SND1C TQFP-80 AT89C5131 T85C5121 JESD22-A101 JESD22-A110 Q100 TQFP80 TS16949 atmel 442

    JESD22-A110

    Abstract: T80C51ID2 3M Philippines
    Text: T83C51RB2 / RC2 – T83C51IB2 / IC2 – T80C51ID2 QualPack Qualification Package T83C51RB2 / RC2 – T83C51IB2 / IC2 – T80C51ID2 ROM and ROMless C51 Microcontrollers T83C51RB2 / RC2 – T83C51IB2 / IC2 – T80C51ID2 February 2002 Rev. 0 – 2002 February


    Original     		PDF T83C51RB2 T83C51IB2 T80C51ID2 T80C51ID2 JESD22-A110 3M Philippines

    Hewlett-Packard transistor microwave

    Abstract: a006 ANA004R AVANTEK transistor AN-A004R
    Text: application note m HEWLETT PACKARD Mounting Considerations For Packaged Microwave Semiconductors AN-A006 INTRODUCTION used to ensure the portion coming into contact when the semiconductor is at zero volts, both DC and AC. Even voltages smaller in magnitude than the breakdowns can cause


    OCR Scan     		PDF 276-68S753 5091-8696E Hewlett-Packard transistor microwave a006 ANA004R AVANTEK transistor AN-A004R

    transistor A006

    Abstract: microwave oscillator design AN1084 Catalog Bipolar Transistor RF Transistor s-parameter A004R
    Text: warn H EW LETT* IS S A PACKARD Application Information The following application information is either published in this catalog or available from your local Hewlett-Packard sales office, authorized distributor, or representative. Technical information is also available on the WWW at:


    OCR Scan     		PDF AT-41511Silicon AN-1131 AT-32063 transistor A006 microwave oscillator design AN1084 Catalog Bipolar Transistor RF Transistor s-parameter A004R

    high power FET transistor s-parameters

    Abstract: transistor 9455 PRIMER transistor A006
    Text: | 2 3 | HEW LETT 1"HA P A C K A R D Applications The applicatim i notes represented by these abstracts are available fro m y o u r local Hewlett-Packard sales office or nearest Hewlett-Packard authorized d istrib u to r or representative. Techn ical inform ation is aiso available on the WWW at:


    OCR Scan     		PDF A004E 5964-3431E AT-32063 5091-8824E 5966-0781E 5091-8819E high power FET transistor s-parameters transistor 9455 PRIMER transistor A006

    CGA10-016

    Abstract: No abstract text available
    Text: . H Ig h -R riia b illty A S IC s CGA10 Series These data sheets are provided for technical guidance only. The final device performance may vary depending upon the final device design and configuration. Continuous Gate* Technology 2-Micron CMOS Gate-Array Series


    OCR Scan     		PDF CGA10 CGA10-016

    HRMA-0470B

    Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
    Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic


    OCR Scan     		PDF E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61

    transistor A006

    Abstract: handling of beam lead diodes Hewlett-Packard transistor microwave A004R
    Text: Tf,]¡\ H EW LETT* VXM PA CK A R D Applications The application notes represented by these abstracts are available from, yo u r local Hewlett-Packard sales office or nearest Hewlett-Packard authorized d istrib u to r or representative. Technical info rm a tio n is also available on the WWW at:


    OCR Scan     		PDF 5964-3902E transistor A006 handling of beam lead diodes Hewlett-Packard transistor microwave A004R