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    TRANSISTOR A01 Search Results

    TRANSISTOR A01 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A01 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1047C

    Abstract: 2sb817c 2SB817
    Text: 2SB817C / 2SD1047C Ordering number : ENA0188 2SB817C / 2SD1047C PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 140V / 12A, AF 80W Output Applications Features • • • Large current capacitance. Wide ASO and high durability against breakdown.


    Original     		PDF ENA0188 2SB817C 2SD1047C 2SB817C A0188-4/4 2SD1047C 2SB817

    EM7164SU16

    Abstract: No abstract text available
    Text: Preliminary merging Memory & Logic Solutions Inc. EM7164SU16 Series 1Mx16 Single Transistor RAM Document Title 1M x 16 bit Single Transistor RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Jul. 11 , 2005 Preliminary 0.1 1’st Revision


    Original     		PDF EM7164SU16 1Mx16 690-7t 100ns 120ns

    EM7164SU16

    Abstract: EM7164SU16W DIE 8INCH T&R
    Text: Preliminary EM7164SU16W Series 1Mx16 Single Transistor RAM Document Title 1M x 16 bit Single Transistor RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Jun. 07 , 2005 Preliminary 0.1 2’nd Draft Add net die and pad coordinates


    Original     		PDF EM7164SU16W 1Mx16 100ns 120ns EM7164SU16 DIE 8INCH T&R

    ATC100B471JT200XT

    Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25N MRFE6VS25NR1 MRFE6VS25N ATC100B471JT200XT EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25N MRFE6VS25NR1 25cale

    TUI-lf-9

    Abstract: ATC700B392JT50X
    Text: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched


    Original     		PDF MMRF1016H MMRF1016HR5 7/2014Semiconductor, TUI-lf-9 ATC700B392JT50X

    CPH5516

    Abstract: No abstract text available
    Text: CPH5516 Ordering number : ENA0196 CPH5516 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Relay drivers, Lamp drivers, Motor drivers, IGBT gate drive. Features • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density


    Original     		PDF CPH5516 ENA0196 A0196-5/5 CPH5516

    Untitled

    Abstract: No abstract text available
    Text: CPH5516 Ordering number : ENA0196A SANYO Semiconductors DATA SHEET CPH5516 PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Relay drivers, Lamp drivers, Motor drivers, IGBT gate drive Features • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density


    Original     		PDF ENA0196A CPH5516 A0196-7/7

    CPH5516

    Abstract: No abstract text available
    Text: CPH5516 Ordering number : ENA0196 SANYO Semiconductors DATA SHEET CPH5516 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Relay drivers, Lamp drivers, Motor drivers, IGBT gate drive. Features • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density


    Original     		PDF CPH5516 ENA0196 A0196-5/5 CPH5516

    Untitled

    Abstract: No abstract text available
    Text: CPH5516 Ordering number : ENA0196A SANYO Semiconductors DATA SHEET CPH5516 PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Relay drivers, Lamp drivers, Motor drivers, IGBT gate drive Features • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density


    Original     		PDF CPH5516 ENA0196A A0196-7/7

    AG TRANSISTOR

    Abstract: Bipolar Junction Transistor siemens power transistor SOT363-Package amplifier siemens sot-363 transistor amplifier siemens bipolar transistor mobile rf power amplifier transistor RF POWER TRANSISTOR NPN
    Text: Application Note No. 048 Discrete & RF Semiconductors RF-GaAs-PA Drain Switch with Current Recycling This application note describes the usage of the SIEMENS BCP 72 pnp-bipolar junction transistor as drain switch of GaAs RF Power Amplifier stages. The base current of the switching transistor can be recycled to supply the driver


    Original     		PDF 150mV AG TRANSISTOR Bipolar Junction Transistor siemens power transistor SOT363-Package amplifier siemens sot-363 transistor amplifier siemens bipolar transistor mobile rf power amplifier transistor RF POWER TRANSISTOR NPN

    A9M15

    Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136


    Original     		PDF AFT09MS015N AFT09MS015NT1 A9M15 AFT09MS015N TRANSISTOR Z10 D55295 815 transistor

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136


    Original     		PDF AFT09MS015N AFT09MS015NT1

    2SA2179

    Abstract: 2SA21
    Text: 2SA2179 Ordering number : ENA0199 2SA2179 PNP Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching Applications Applications • High-speed switching applications switching regulators, drive circuit . Features • • • • Adoption of MBIT processes.


    Original     		PDF 2SA2179 ENA0199 A0199-4/4 2SA2179 2SA21

    2SC5957M

    Abstract: iT063
    Text: 2SC5957M Ordering number : ENA0152 2SC5957M NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage and high reliability. High-speed switching. Wide ASO. Adoption of MBIT process. Specifications


    Original     		PDF 2SC5957M ENA0152 PW300 cycle10% A0152-4/4 2SC5957M iT063

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136


    Original     		PDF AFT09MS015N AFT09MS015NT1

    TT2234

    Abstract: No abstract text available
    Text: TT2234 Ordering number : ENA0174 NPN Triple Diffused Planar Silicon Transistor TT2234 Color TV Horizontal Deflection Output Applications Features • • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).


    Original     		PDF TT2234 ENA0174 A0174-4/4 TT2234

    Untitled

    Abstract: No abstract text available
    Text: MCH3220 Ordering number : ENA0180 MCH3220 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • • Adoption of MBIT processes. Large current capacitance.


    Original     		PDF ENA0180 MCH3220 A0180-4/4

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    transistor tt 2222

    Abstract: BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56
    Text: PHILIPS INTERNATIONAL MIE D B 711üaEb ÜQ2flQ0ci 1 B P H I N A J L B LLY93 Y93A M A IN T EN A N C E TYPE T~33~/3 V.H.F. POWER TRANSISTOR '\ N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industriar and military transmitters with a supply voltage of 28 V, The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF LY93A BLY93A transistor tt 2222 BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56

    buz72a

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE QbE D • PowerMOS transistor fc,b53131 001443? T ■ BUZ72A -j-_ 3 ^- jj May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF b53131 BUZ72A BUZ72A_ T-39-11 0D14443

    SGS100MA010D1

    Abstract: S100M schematic diagram reverse forward motor
    Text: SGS-THOMSON SG S100M A010D 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSS ^D S on SGS100MA010D1 100 V 0.014 a • • • • • Id 120 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE EASY TO PARALLEL INDUSTRIAL APPLICATIONS:


    OCR Scan     		PDF S100M A010D A010D1 SGS100MA010D1 SGS100MA010D1 schematic diagram reverse forward motor