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    TRANSISTOR A06 Search Results

    TRANSISTOR A06 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A06 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • Suitable for general switching & amplification • Well suited for portable application E B Marking : A06


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    MMBT3906T OT-523F MMBT3904T MMBT3906T PDF

    marking A06

    Abstract: marking A06 amplifier KTMC1060SC MMBT3904T MMBT3906T transistor j25
    Text: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • Suitable for general switching & amplification Marking : A06 • Well suited for portable application


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    MMBT3906T OT-523F MMBT3904T MMBT3906T marking A06 marking A06 amplifier KTMC1060SC transistor j25 PDF

    a0629

    Abstract: 2SC3807MP A0629-1 VEBO-15V IT11926
    Text: 2SC3807MP Ordering number : ENA0629 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807MP 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers.


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    2SC3807MP ENA0629 VEBO15V) A0629-4/4 a0629 2SC3807MP A0629-1 VEBO-15V IT11926 PDF

    transistor A2210

    Abstract: ENA0667B 2sa2210 2SA2210-1E
    Text: 2SA2210 Ordering number : ENA0667B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes


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    ENA0667B 2SA2210 150ement, A0667-7/7 transistor A2210 ENA0667B 2sa2210 2SA2210-1E PDF

    transistor A2210

    Abstract: 2SA2210
    Text: 2SA2210 Ordering number : ENA0667B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes


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    2SA2210 ENA0667B A0667-7/7 transistor A2210 2SA2210 PDF

    transistor A2210

    Abstract: a2210 2sa2210
    Text: 2SA2210 Ordering number : ENA0667A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes


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    ENA0667A 2SA2210 A0667-5/5 transistor A2210 a2210 2sa2210 PDF

    2SA2210

    Abstract: equivalent transistor 2sa2210 A0667-1 2SA221 A0667
    Text: 2SA2210 Ordering number : ENA0667 SANYO Semiconductors DATA SHEET 2SA2210 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • • • Adoption of MBIT processes.


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    2SA2210 ENA0667 A0667-4/4 2SA2210 equivalent transistor 2sa2210 A0667-1 2SA221 A0667 PDF

    2SC6084

    Abstract: No abstract text available
    Text: 2SC6084 Ordering number : ENA0630 SANYO Semiconductors DATA SHEET 2SC6084 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).


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    2SC6084 ENA0630 A0630-4/4 2SC6084 PDF

    2SA2210-1E

    Abstract: transistor A2210
    Text: Ordering number : ENA0667B 2SA2210 Bipolar Transistor http://onsemi.com –50V, –20A, Low VCE sat PNP TO-220F-3SG Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes Low collector-to-emitter saturation voltage


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    ENA0667B 2SA2210 O-220F-3SG A0667-7/7 2SA2210-1E transistor A2210 PDF

    A06 smd

    Abstract: A06 smd transistor SMD A06 a06 transistor A05 smd A05 SOT marking a06 CMBTA05 CMBTA06 transistor A06
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


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    OT-23 CMBTA05 CMBTA06 C-120 A06 smd A06 smd transistor SMD A06 a06 transistor A05 smd A05 SOT marking a06 CMBTA05 CMBTA06 transistor A06 PDF

    MMDTA06

    Abstract: a06 transistor marking a06
    Text: MMDTA06 ADVANCE INFORMATION 80V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data • • • • • • • • • • BVCEO > 80V ICM = 1A Peak Pulse Current General purpose NPN transistors ideally suited for low power


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    MMDTA06 AEC-Q101 J-STD-020 MIL-STD-202, DS35114 MMDTA06 a06 transistor marking a06 PDF

    a06 smd transistor

    Abstract: A06 SMD SMD A06 smd marking A06 A05 smd a06 transistor transistor A05 marking A06 CMBTA05 CMBTA06
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


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    ISO/TS16949 OT-23 CMBTA05 CMBTA06 C-120 a06 smd transistor A06 SMD SMD A06 smd marking A06 A05 smd a06 transistor transistor A05 marking A06 CMBTA05 CMBTA06 PDF

    P2640

    Abstract: 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel
    Text: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


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    TP2640 DSFP-TP2640 A062609 P2640 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel PDF

    P-Channel FET 100v to92

    Abstract: FAST DMOS FET Switches p-CHANNEL 125OC TP2635
    Text: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


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    TP2635 DSFP-TP2635 A062209 P-Channel FET 100v to92 FAST DMOS FET Switches p-CHANNEL 125OC TP2635 PDF

    Untitled

    Abstract: No abstract text available
    Text: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling


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    TP2635 DSFP-TP2635 A062209 PDF

    Untitled

    Abstract: No abstract text available
    Text: VN2222NC N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2222NC is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.


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    VN2222NC VN2222NC MS-030, DSPD-20CDIPCNC, B061608. DSFP-VN2222NC A061608 PDF

    Untitled

    Abstract: No abstract text available
    Text: fcT I ISI E G 2SC D • Ö235b05 G0G4352 T NPN Silicon Planar Transistor BD 424 T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets


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    235b05 G0G4352 Q62702-D1068 PDF

    Transistor 2SC 2166

    Abstract: transistor IR 652 P 2166 1j1 bsv 81 X12X15
    Text: ESC D • aE35b05 0004602 H ■ S I E G , yvjr-// NPN Transistor for Switching Applications SIEMENS AKTIENGESELLSCHAF - BSV 65 ° ' BSV 65 is an epitaxial NPN silicon planar switching transistor in TO 2 3 6 plastic package 2 3 A 3 DIN 4 1 8 6 9 designed for use in thick and thin film circuits.


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    aE35b05 BSV65 Transistor 2SC 2166 transistor IR 652 P 2166 1j1 bsv 81 X12X15 PDF

    c111m

    Abstract: Transistor 2SC 2166 TRANSISTOR C-111 Q62702-S355 Q62702-S428 1E0C BSV65 Q62702-S347 Q62702-S348 Q62702-S406
    Text: ESC D • aE 35b05 0 0 0 4 6 0 2 H ■ S I E G NPN Transistor for Switching Applications SIEMENS AKTIENGESELLSCHAF - , ° y v jr-// BSV 65 ' BSV 65 is an epitaxial NPN silicon planar switching transistor in TO 2 3 6 plastic package 23 A 3 DIN 41869 designed for use in thick and thin film circuits.


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    Q62702-S fi235bOS BSV65 c111m Transistor 2SC 2166 TRANSISTOR C-111 Q62702-S355 Q62702-S428 1E0C BSV65 Q62702-S347 Q62702-S348 Q62702-S406 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors NPN General Purpose Transistor I SSTA06/M MSTA06/M PS A06 # External dimensions Units : mm •F eatures 1 ) B V ceo < 4 0 V (lc = *1 m A ) SSTA06 2 ) Complements the SSTA56/MMSTA56/MPSA56. 0 .9 5 ± g ; f 1 9 ± 0 .2 •P ackage, mark and packaging specifications


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    SSTA06/M MSTA06/M SSTA06 SSTA56/MMSTA56/MPSA56. MMSTA06 MPSA06 O-220FN O-220FN O220FP PDF

    sta06

    Abstract: mark T116
    Text: Transistors I NPN General Purpose Transistor SST A06/MMSTA06/MPSA06 •Features •Externa dimensions Units : mm) Í ) B V c e o < 4 0 V ( I c ^ lm A ) 2 ) Com plem ents the SS T A 56 /M M S T A 5 6/M PS A 56 . SSTA06 •Package, mark and packaging specifications


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    A06/MMSTA06/MPSA06 STA06 PSA06 SSTA06 STA06, SSTA06 MMSTA06 MPSA06 mark T116 PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N -P-N transistor Marking CMBTA05 = IH CMBTA06 = IG PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 "^^009 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _K02 0.89" 0.60 0.40


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    CMBTA05 CMBTA06 PDF