mpsa09
Abstract: MPS-A09 transistor D 982
Text: MPS-A09 SILICON NPN SILICON ANNULAR TRANSISTOR NPN SILICON AMPLIFIER TRANSISTOR . designed for preamplifier applications in audio amplifiers. • Collector-Emitter Breakdown Voltage — B V c E O ” 50 v dc (Min) @ lc = 1.0 m Adc • Low Noise Figure —
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MPS-A09
mpsa09
MPS-A09
transistor D 982
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2sc 103 transistor
Abstract: transistor BD 430
Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^f’ 33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 429 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 430 it is particularly suitable for use in
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Q62702-D1069
-T-33-OS
fl23SbQS
BD429
2sc 103 transistor
transistor BD 430
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BD429
Abstract: D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor
Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^ f’33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 4 2 9 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 3 0 it is particularly suitable for use in
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fl23Sfc
Q62702-D1069
BD429
fnb33
D1069
Q62702-D1069
fcdc
2SC 102
bD 106 transistor
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MPSU57
Abstract: MPS-U07 MPS-U57 MPSU57 motorola transistor a 953 037s transistor dm 506 724 motorola NPN Transistor
Text: MOTOROL A SC XSTRS/R F 1EE D | fc.3t?aSM OGflSSOT a | T - Î 3- I 7 MOTOROLA SEMICONDUCTOR MPS-U57 TECHNICAL DATA AMPLIFIER TRANSISTOR PNP SILICON ANNULAR AMPLIFIER TRANSISTOR * PNP SILICON . . . designed for general-purpose, high-voltage amplifier and driver
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MPS-U57
MPS-U07
MPSU57
MPS-U07
MPS-U57
MPSU57 motorola
transistor a 953
037s
transistor dm 506
724 motorola NPN Transistor
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BFS20R
Abstract: IC mark A09 BFS 65 Q62702-F350 Q62702-F589 a10 transistor
Text: 2sc D m aaastas oooMb^s ? « s i e g r NPN Silicon RF Transistor BFS 20 BFS 20 R SIEMENS A K T I E N 6E SE LL SCH AF BFS 20 is an epitaxial NPN silicon planar RF transistor in TO 236 plastic package 23 A 3 DIN 41 869 , intended for use in film circuits. The transistor BFS 20 is marked "NA". It is also available upon request with changed
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a23Sb05
Q62702-F350
Q62702-F589
BFS20R
IC mark A09
BFS 65
Q62702-F350
Q62702-F589
a10 transistor
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Untitled
Abstract: No abstract text available
Text: 2SC D B A23SbDS □ ÜQH'iÜfc» S « S I E G _ „ _ , , J ~ i ' r — t '- S NPN Silicon Planar Transistor 2 N 3019 _ SIEMENS A K T I E N G E S E L L S C H A F -2 N 3019 is an epitaxial NPN silicon planar transistor in TO 39 case 5 C 3 DIN 41873 .
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A23SbDS
fl53SbOS
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC TS » 0 S 0 4 3 3 Ô 0 0 0 3 7 4 '} 4 • A L GR T -9 1 -0 1 P R O C E S S YJA Process YJA PNP Power Darlington Transistor Process Y JA is an epitaxial planar P N P silicon Darlington transistor. It is designed for use in highgain, high-power applications. It is the P N P comple
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0S0433A
T-91-01
10jxA
000375D
T-91-Ã
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CPH3249A
Abstract: No abstract text available
Text: CPH3249A Ordering number : ENA0902 SANYO Semiconductors DATA SHEET CPH3249A NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage. Ultrahigh-speed switching. Wide ASO. Adoption of MBIT process.
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CPH3249A
ENA0902
PW300
cycle10%
600mm20
A0902-4/4
CPH3249A
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CPH3249
Abstract: No abstract text available
Text: CPH3249 Ordering number : ENA0920 SANYO Semiconductors DATA SHEET CPH3249 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage. Ultrahigh-speed switching. Wide ASO. Adoption of MBIT process.
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CPH3249
ENA0920
PW300
cycle10%
600mm20
A0920-4/4
CPH3249
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2SC6083A
Abstract: RL-400
Text: 2SC6083A Ordering number : ENA0900 SANYO Semiconductors DATA SHEET 2SC6083A NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process.
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2SC6083A
ENA0900
A0900-4/4
2SC6083A
RL-400
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2SC608
Abstract: 2SC6083A
Text: 2SC6083A Ordering number : ENA0900A SANYO Semiconductors DATA SHEET 2SC6083A NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process.
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2SC6083A
ENA0900A
PW300s,
cycle10%
A0900-4/4
2SC608
2SC6083A
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sot 23 x 316
Abstract: fet sot-89 marking code P-Channel FET 100v to92
Text: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN5325
DSFP-TN5325
A091408
sot 23 x 316
fet sot-89 marking code
P-Channel FET 100v to92
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2SC6089
Abstract: SANYO 2SC6089 IT13093 A0995
Text: 2SC6089 Ordering number : ENA0995 SANYO Semiconductors DATA SHEET 2SC6089 NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . Adoption of high reliability HVP process.
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2SC6089
ENA0995
A0995-4/4
2SC6089
SANYO 2SC6089
IT13093
A0995
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Untitled
Abstract: No abstract text available
Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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DN3765
DSFP-DN3765
A091208
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2sc6091
Abstract: No abstract text available
Text: 2SC6091 Ordering number : ENA0994 SANYO Semiconductors DATA SHEET 2SC6091 NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . Adoption of high reliability HVP process.
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2SC6091
ENA0994
A0994-4/4
2sc6091
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2SC6090
Abstract: 2SC6090LS ENA0996 2SC609 IT03005
Text: 2SC6090LS Ordering number : ENA0996 SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor 2SC6090LS Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . Adoption of high reliability HVP process.
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2SC6090LS
ENA0996
A0996-4/4
2SC6090
2SC6090LS
ENA0996
2SC609
IT03005
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Untitled
Abstract: No abstract text available
Text: VN2110 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► The Supertex VN2110 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VN2110
DSFP-VN2110
A091508
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dn5s
Abstract: marking code sot-89 AA
Text: DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► This low threshold depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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DN3535
DSFP-DN3535
A091208
dn5s
marking code sot-89 AA
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Untitled
Abstract: No abstract text available
Text: VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2224 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VN2224
DSFP-VN2224
A091508
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Untitled
Abstract: No abstract text available
Text: TN2501 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN2501
110pF
DSFP-TN2501
A091208
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Untitled
Abstract: No abstract text available
Text: VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN0106
DSFP-VN0106
A091508
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transistor vn2222
Abstract: No abstract text available
Text: VN2222LL N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2222LL is an enhancement-mode normally-off transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate
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VN2222LL
DSFP-VN2222LL
A091508
transistor vn2222
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A090-1
Abstract: 2SC6117 A0901-1
Text: 2SC6117 Ordering number : ENA0901 SANYO Semiconductors DATA SHEET 2SC6117 NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications Features • • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).
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2SC6117
ENA0901
A0901-4/4
A090-1
2SC6117
A0901-1
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A09 RF Amplifier
Abstract: A09 amplifier A09 SOT23 4 npn transistor ic RF POWER TRANSISTOR NPN TSA1036CX TSC2411 TSC2411CX
Text: TSC2411 General Purpose NPN Transistor SOT-23 PRODUCT SUMMARY Pin Definition: 1. Base 2. Emitter 3. Collector BVCEO 40V BVCBO 75V IC 600mA VCE SAT Features ● ● Ordering Information Driver Stage of AF Amplifier General Purpose Switching Application Part No.
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TSC2411
OT-23
600mA
TSC2411CX
380mA
TSA1036CX
A09 RF Amplifier
A09 amplifier
A09 SOT23
4 npn transistor ic
RF POWER TRANSISTOR NPN
TSA1036CX
TSC2411
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