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    TRANSISTOR A1 HB Search Results

    TRANSISTOR A1 HB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A1 HB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRA551F~KRA554F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ・With Built-in Bias Resistors. C ・Simplify Circuit Design. C A DIM A A1 B B1 C D H T A1


    Original     		PDF KRA551F KRA554F KRA553F KRA552F KRA551F

    KRA551F

    Abstract: KRA552F resistor 554f KRA553F KRA554F
    Text: SEMICONDUCTOR KRA551F~KRA554F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. C Simplify Circuit Design. C A DIM A A1 B B1 C D H T A1 Reduce a Quantity of Parts and Manufacturing Process.


    Original     		PDF KRA551F KRA554F KRA553F KRA552F KRA551F KRA552F resistor 554f KRA553F KRA554F

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRA551F~KRA554F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. C Simplify Circuit Design. C A DIM A A1 B B1 C D H T A1 Reduce a Quantity of Parts and Manufacturing Process.


    Original     		PDF KRA551F KRA554F KRA553F KRA552F KRA551F

    KTC814U

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC814U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FOR MUTING AND SWITCHING APPLICATION. FEATURES B B1 High Emitter-Base Voltage : VEBO=25V Min. High Reverse hFE A 6 2 5 3 4 C A1 Low on Resistance : RON=1 (Typ.), (IB=5mA) D MILLIMETERS _ 0.20


    Original     		PDF KTC814U KTC814U

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC814U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FOR MUTING AND SWITCHING APPLICATION. FEATURES B B1 High Emitter-Base Voltage : VEBO=25V Min. High Reverse hFE A 6 2 5 3 4 C A1 Low on Resistance : RON=1 (Typ.), (IB=5mA) D MILLIMETERS _ 0.20


    Original     		PDF KTC814U

    SMD transistor A1

    Abstract: IC 2003 E001 G003 CHIP COIL siemens matsua smd transistor A1 4 PIN
    Text: iC-WD SWITCH-MODE DUAL 5 V REGULATOR Rev A1, Page 1/12 FEATURES Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë APPLICATIONS Input voltage 8 to 36 Vdc Highly efficient step-down regulator Switching transistor and free-wheeling diode integrated Adjustment of the regulator cut-off current with external


    Original     		PDF D-55294 SMD transistor A1 IC 2003 E001 G003 CHIP COIL siemens matsua smd transistor A1 4 PIN

    9V-12V DC INPUT

    Abstract: IC marking code D3 CQ212 MMBD4448DW case 202 transistor pinouts MMBT2907A MMBTA06 mbta06
    Text: HBDM60V600W NEW PROD PR OD UCT COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) 6 5 4 Mechanical Data


    Original     		PDF HBDM60V600W OT-363 J-STD-020C MIL-STD-202, DS30701 9V-12V DC INPUT IC marking code D3 CQ212 MMBD4448DW case 202 transistor pinouts MMBT2907A MMBTA06 mbta06

    9V-12V DC INPUT

    Abstract: sot-363 u4 IC marking code D3 MARKING R6 SOT-363 MMBT2907A MMBTA06 hbdm60v600 U5A1 mmbd4448 MARKING HB01
    Text: HBDM60V600W Lead-free Green NEW PRODUCT COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features • · · Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) 6 5 4 Mechanical Data


    Original     		PDF HBDM60V600W OT-363 J-STD-020C MIL-STD-202, DS30701 9V-12V DC INPUT sot-363 u4 IC marking code D3 MARKING R6 SOT-363 MMBT2907A MMBTA06 hbdm60v600 U5A1 mmbd4448 MARKING HB01

    Untitled

    Abstract: No abstract text available
    Text: HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features Mechanical Data • • • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Sub-Component P/N


    Original     		PDF HBDM60V600W MMBT2907A MMBTA06 OT-363 J-STD-020D MIL-STD-202, DS30701

    case 202 transistor pinouts

    Abstract: hbdm60v600 TRANSISTOR ARRAY q2n* npn transistor L 450 diod TRANSISTOR ARRAY HBDM60V600W COMPLEX J-STD-020D MMBT2907A MMBTA06 mbta06
    Text: HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Please click here to visit our online spice models database. Features Mechanical Data • • • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1


    Original     		PDF HBDM60V600W MMBT2907A MMBTA06 OT-363 J-STD-020D DS30701 case 202 transistor pinouts hbdm60v600 TRANSISTOR ARRAY q2n* npn transistor L 450 diod TRANSISTOR ARRAY HBDM60V600W COMPLEX J-STD-020D mbta06

    J119 transistor

    Abstract: bipolar transistor ghz s-parameter 140C SGA-8543Z SiGe POWER TRANSISTOR
    Text: Preliminary SGA-8543Z Product Description Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can be


    Original     		PDF SGA-8543Z SGA-8543Z EDS-102583 J119 transistor bipolar transistor ghz s-parameter 140C SiGe POWER TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SGA-8543Z Product Description Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50 MHz to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can


    Original     		PDF SGA-8543Z SGA-8543Z EDS-102583

    GSA606-12

    Abstract: GSA606 InGaP HBT Gain Block MARKING HBT DC9000 ATC520L103KT16T
    Text: GSA606-12 InGaP HBT Gain Block Product Features Product Description ● DC to 7GHz Package The GSA606-12 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 1MHz to 6GHz frequency range with 15dB nominal gain at 2GHz. ● +15.7dBm P-1dB at 2GHz


    Original     		PDF GSA606-12 GSA606-12 28dBm GSA606 InGaP HBT Gain Block MARKING HBT DC9000 ATC520L103KT16T

    ATC520L103KT16T

    Abstract: ATC520L103KT16
    Text: GSA504-12 InGaP HBT Gain Block Product Features Product Description ● DC to 4GHz Package The GSA504-12 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 1MHz to 4GHz frequency range with 20dB nominal gain at 2GHz. ● +15 dBm P-1dB at 2GHz


    Original     		PDF GSA504-12 GSA504-12 ATC520L103KT16T ATC520L103KT16

    ATC520L103KT16T

    Abstract: MARKING HBT GSA612-12
    Text: GSA612-12 InGaP HBT Gain Block Product Features ● DC to 12GHz ● +12 dBm P-1dB at 2GHz ● +27 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 5.5 dB Noise Figure ● Internally-Matched to 50 Ω ● Unique 0805 Lead–Free/green package ● Available as bare die


    Original     		PDF GSA612-12 12GHz GSA612-12 12GHz ATC520L103KT16T MARKING HBT

    GSA804-12

    Abstract: s parameters 4ghz 4ghz s parameters transistor 4ghz transistor n ATC520L103KT16
    Text: GSA804-12 InGaP HBT Gain Block Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω ● 0805 Lead–Free/green package ● Available as bare die


    Original     		PDF GSA804-12 GSA804-12 s parameters 4ghz 4ghz s parameters transistor 4ghz transistor n ATC520L103KT16

    GSA603-12

    Abstract: GSA-603-12 gsa603
    Text: GSA603-12 InGaP HBT Gain Block Product Features ● DC to 3.5GHz ● +16 dBm P-1dB at 2GHz ● +28 dBm OIP3 at 2GHz ● 18 dB Gain at 2GHz ● 3.8 dB Noise Figure ● Internally-Matched to 50 Ω ● Unique 0805 Lead–Free/green package ● Available as bare die


    Original     		PDF GSA603-12 GSA603-12 GSA-603-12 gsa603

    ATC520L103KT16T

    Abstract: Amplifier SOT-89 c4 GSA804-89 s parameters 4ghz ATC520L103KT16
    Text: GSA804-89 InGaP HBT Gain Block Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω ● SOT-89 Lead–Free/green package ● Available as bare die


    Original     		PDF GSA804-89 OT-89 GSA804-89 ATC520L103KT16T Amplifier SOT-89 c4 s parameters 4ghz ATC520L103KT16

    SGA8543Z-EVB2

    Abstract: marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P
    Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The


    Original     		PDF SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809 SGA8543Z-EVB2 marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P

    Untitled

    Abstract: No abstract text available
    Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The


    Original     		PDF SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809

    Untitled

    Abstract: No abstract text available
    Text: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin


    Original     		PDF LX5512E 19dBm 64QAM, 54Mbps) LX5512E 16-pin 11b/g

    Untitled

    Abstract: No abstract text available
    Text: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin


    Original     		PDF LX5512E 45GHz 19dBm 130mA 19dBm 64QAM 54Mbps LX5512E

    FP6700

    Abstract: led tail light pwm dimming capacitor 22uf 450v FP6700SO sop16 pwm sop16 automotive SOP-16EP power factor correction buck topology FP6700-1 flyback led driver with pwm dimming
    Text: FP6700 fitipower integrated technology lnc. Universal High Brightness LED Driver Description The FP6700 is a PWM high-efficiency LED driver control IC. It allows efficient operation of High Brightness HB LEDs from voltage sources ranging from 8VDC up to 450VDC. The FP6700 controls an


    Original     		PDF FP6700 FP6700 450VDC. 300kHz. MS-012. FP6700-1 2-JUN-2009 led tail light pwm dimming capacitor 22uf 450v FP6700SO sop16 pwm sop16 automotive SOP-16EP power factor correction buck topology flyback led driver with pwm dimming

    QM50DY-H

    Abstract: transistor B A O 331
    Text: MITSUBISHI TRANSISTOR MODULES QM50DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-HB . • Ic Collector c u rre n t. BOA • V cex C ollector-em itter v o lta g e 600V • hre DC current g a in . 750


    OCR Scan     		PDF QM50DY-HB E80276 E80271 QM50DY-H transistor B A O 331