NL27WZ14DFT2G
Abstract: A114 NL27WZ04 NL27WZ14 54 SC59-6
Text: NL27WZ14 Dual Schmitt-Trigger Inverter MARKING DIAGRAMS 6 6 M The NL27WZ14 is a high performance dual inverter with Schmitt−Trigger inputs operating from a 1.65 to 5.5 V supply. Pin configuration and function are the same as the NL27WZ04, but the inputs have hysteresis and, with its Schmitt trigger function, the
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NL27WZ14
NL27WZ14
NL27WZ04,
NL27WZ14DFT2G
A114
NL27WZ04
54 SC59-6
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Untitled
Abstract: No abstract text available
Text: T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •
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T2G6003028-FL
T2G6003028-FL
JESD22-A114
2002/95/EC
C15H12Br402)
J-STD-020.
EAR99
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transistor 4242 dm
Abstract: MBRM130L NCP1800 NCP1800DM41R2 NCP1800DM41R2G NCP1800DM42R2 NTGS3441T1 NTHD4P02FT1 cccv regulator
Text: NCP1800 Single−Cell Lithium Ion Battery Charge Controller The NCP1800 is a constant current, constant voltage CCCV lithium ion battery charge controller. The external sense resistor sets the full charging current, and the termination current is 10% of the
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NCP1800
NCP1800
NCP1800/D
transistor 4242 dm
MBRM130L
NCP1800DM41R2
NCP1800DM41R2G
NCP1800DM42R2
NTGS3441T1
NTHD4P02FT1
cccv regulator
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Untitled
Abstract: No abstract text available
Text: NCP1800 Single−Cell Lithium Ion Battery Charge Controller The NCP1800 is a constant current, constant voltage CCCV lithium ion battery charge controller. The external sense resistor sets the full charging current, and the termination current is 10% of the
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NCP1800
NCP1800
NCP1800/D
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transistor A114
Abstract: A114 A115 FPD1000V JESD22 A114 transistor
Text: PRELIMINARY • FEATURES 1.8 GHz ♦ 31 dBm Linear Output Power ♦ 16 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 41 dBm Output IP3 ♦ Maximum Stable Gain of 20 dB ♦ 50% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias 1W POWER PHEMT
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FPD1000V
FPD1000V
transistor A114
A114
A115
JESD22
A114 transistor
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Untitled
Abstract: No abstract text available
Text: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T2G4005528-FS
T2G4005528-FS
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A114
Abstract: A115 FPD4000V JESD22
Text: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Linear Output Power ♦ 11 dB Power Gain ♦ Useable Gain to 9 GHz ♦ 47 dBm Output IP3 ♦ 19 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD4000V
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FPD4000V
FPD4000V
A114
A115
JESD22
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A114
Abstract: A115 FPD2000V JESD22 Au Sn eutectic
Text: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 33 dBm Linear Output Power ♦ 14.5 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 44 dBm Output IP3 ♦ 20 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD2000V
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FPD2000V
FPD2000V
A114
A115
JESD22
Au Sn eutectic
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transistor A114
Abstract: transistor a114 diagram A114 transistor transistor a115
Text: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 33 dBm Linear Output Power ♦ 14.5 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 44 dBm Output IP3 ♦ 20 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD2000V
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FPD2000V
FPD2000V
transistor A114
transistor a114 diagram
A114 transistor
transistor a115
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transistor a114 diagram
Abstract: A114 A115 FPD1000V JESD22 transistor A114 transistor a115
Text: PRELIMINARY • FEATURES 1.8 GHz ♦ 31 dBm Linear Output Power ♦ 16 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 41 dBm Output IP3 ♦ Maximum Stable Gain of 20 dB ♦ 50% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias 1W POWER PHEMT
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FPD1000V
FPD1000V
transistor a114 diagram
A114
A115
JESD22
transistor A114
transistor a115
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Untitled
Abstract: No abstract text available
Text: T2G6003028-FS 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •
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T2G6003028-FS
T2G6003028-FS
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18w transistor
Abstract: No abstract text available
Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T2G6001528-Q3
T2G6001528-Q3
TQGaN25
18w transistor
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CRCW0805100F100
Abstract: Ghz dB transistor
Text: T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •
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T2G6000528-Q3
T2G6000528-Q3
CRCW0805100F100
Ghz dB transistor
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Untitled
Abstract: No abstract text available
Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T2G6001528-Q3
T2G6001528-Q3
TQGaN25
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UM3750
Abstract: A114 A115 FPD10000V JESD22 wedge Filtronic
Text: PRELIMINARY FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS • • PERFORMANCE 3.5 GHz (802.16-2004 WiMAX Modulation) ♦ 30 dBm Output Power, < 2.5% EVM ♦ 9.5 dB Power Gain ♦ Class AB Efficiency 10% (10V / 1A IDQ) GATE DRAIN ♦ Class B Efficiency 18% (8V / 300 mA IDQ)
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FPD10000V
FPD10000V
UM3750
A114
A115
JESD22
wedge
Filtronic
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transistor A114
Abstract: NCP3065 application NCP3065 A114 transistor NCP3065DR2G transistor a115 NCP3065MNTXG PWM IC 14 PIN FOR LED AND SOLAR DRIVER APPLICATION a114 transistor replacement NCV3065
Text: NCP3065, NCV3065 Up to 1.5 A Constant Current Switching Regulator for LEDs The NCP3065 is a monolithic switching regulator designed to deliver constant current for powering high brightness LEDs. The device has a very low feedback voltage of 235 mV nominal which is
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NCP3065,
NCV3065
NCP3065
transistor A114
NCP3065 application
A114 transistor
NCP3065DR2G
transistor a115
NCP3065MNTXG
PWM IC 14 PIN FOR LED AND SOLAR DRIVER APPLICATION
a114 transistor replacement
NCV3065
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Untitled
Abstract: No abstract text available
Text: T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •
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T2G6000528-Q3
T2G6000528-Q3
TQGaN25
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Untitled
Abstract: No abstract text available
Text: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T2G4005528-FS
T2G4005528-FS
TQGaN25
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Untitled
Abstract: No abstract text available
Text: T1G4004532-FS 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T1G4004532-FS
T1G4004532-FS
TQGaN25
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Untitled
Abstract: No abstract text available
Text: T1G2028536-FL 285W, 36V DC – 2 GHz, GaN RF Power Transistor Applications • • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers GPS Communications Avionics
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T1G2028536-FL
T1G2028536-FL
TQGaN25HV
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Untitled
Abstract: No abstract text available
Text: T1G6001032-SM 10W, 32V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T1G6001032-SM
T1G6001032-SM
TQGaN25
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Untitled
Abstract: No abstract text available
Text: T1G4012036-FL 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4012036-FL
T1G4012036-FL
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Untitled
Abstract: No abstract text available
Text: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4012036-FS
T1G4012036-FS
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Untitled
Abstract: No abstract text available
Text: T1G4004532-FL 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T1G4004532-FL
T1G4004532-FL
TQGaN25
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