TRANSISTOR A114 E Search Results

TRANSISTOR A114 E Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

TRANSISTOR A114 E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant	Original	2N7002K JESD22 OT-23	PDF
transistor A114 Abstract: A114 transistor 2N7002K transistor a114 esd 2n7002k 7k transistor 2N7002K transistor C101 A114 C101 JESD22 Text: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant	Original	2N7002K JESD22 OT-23 transistor A114 A114 transistor 2N7002K transistor a114 esd 2n7002k 7k transistor 2N7002K transistor C101 A114 C101	PDF
A114 Abstract: A115 FPD4000V JESD22 Text: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Linear Output Power ♦ 11 dB Power Gain ♦ Useable Gain to 9 GHz ♦ 47 dBm Output IP3 ♦ 19 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD4000V	Original	FPD4000V FPD4000V A114 A115 JESD22	PDF
A114 Abstract: A115 FPD2000V JESD22 Au Sn eutectic Text: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 33 dBm Linear Output Power ♦ 14.5 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 44 dBm Output IP3 ♦ 20 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD2000V	Original	FPD2000V FPD2000V A114 A115 JESD22 Au Sn eutectic	PDF
transistor A114 Abstract: transistor a114 diagram A114 transistor transistor a115 Text: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 33 dBm Linear Output Power ♦ 14.5 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 44 dBm Output IP3 ♦ 20 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD2000V	Original	FPD2000V FPD2000V transistor A114 transistor a114 diagram A114 transistor transistor a115	PDF
transistor a114 diagram Abstract: A114 A115 FPD1000V JESD22 transistor A114 transistor a115 Text: PRELIMINARY • FEATURES 1.8 GHz ♦ 31 dBm Linear Output Power ♦ 16 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 41 dBm Output IP3 ♦ Maximum Stable Gain of 20 dB ♦ 50% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias 1W POWER PHEMT	Original	FPD1000V FPD1000V transistor a114 diagram A114 A115 JESD22 transistor A114 transistor a115	PDF
UM3750 Abstract: A114 A115 FPD10000V JESD22 wedge Filtronic Text: PRELIMINARY FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS • • PERFORMANCE 3.5 GHz (802.16-2004 WiMAX Modulation) ♦ 30 dBm Output Power, < 2.5% EVM ♦ 9.5 dB Power Gain ♦ Class AB Efficiency 10% (10V / 1A IDQ) GATE DRAIN ♦ Class B Efficiency 18% (8V / 300 mA IDQ)	Original	FPD10000V FPD10000V UM3750 A114 A115 JESD22 wedge Filtronic	PDF
Untitled Abstract: No abstract text available Text: 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant	Original	2N7002KW JESD22 OT-323	PDF
Transistor p1f Abstract: MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS FPD4000AS Text: FPD4000AS 2.5W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 34.5 dBm Output Power (P1dB) ♦ 12 dB Power Gain (G1dB) ♦ 45 dBm Output IP3 ♦ 8V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website	Original	FPD4000AS FPD4000AS 200mA Transistor p1f MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 3, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are	Original	MRF6V2010N MRF6V2010NB	PDF
transistor A114 Abstract: a113 bolt AN1955 AN3263 MRF6V2010N A113 A114 A115 C101 JESD22 Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 12/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are	Original	MRF6V2010N MRF6V2010NB transistor A114 a113 bolt AN1955 AN3263 A113 A114 A115 C101 JESD22	PDF
marking codes transistors a1 sot-23 Abstract: A114 MAX8863 MAX8863REUK MAX8863SEUK MAX8863TEUK G1 SOT-23 Text: MAX8863 Pin-Compatible, Low-Dropout, 120 mA Linear Regulator Delivering up to 120 mA, the MAX8863 is a fixed output, low–dropout linear regulator that operates from a +2.5 V to +6.0 V input range. The 50 µA supply current remains independent of load, making these devices ideal for battery–operated portable equipment.	Original	MAX8863 MAX8863 r14525 MAX8863/D marking codes transistors a1 sot-23 A114 MAX8863REUK MAX8863SEUK MAX8863TEUK G1 SOT-23	PDF
F35V Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 1, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10010N MRF6V10010NR4 MRF6V10010N F35V	PDF
transistor equivalent table c101 Abstract: KEMET C1206C104K5RACTR CRCW12063301FKEA MRF6V10010N A03TKlc C1206C104K5RACTR Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 0, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10010N MRF6V10010NR4 MRF6V10010N transistor equivalent table c101 KEMET C1206C104K5RACTR CRCW12063301FKEA A03TKlc C1206C104K5RACTR	PDF

MRF6V2300N Abstract: MRF6V2300NB AN3263 A113 A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are	Original	MRF6V2300N MRF6V2300NB MRF6V2300NB AN3263 A113 A114 A115 AN1955 C101 JESD22	PDF
hatching machine Abstract: MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications	Original	MRF6V2150N MRF6V2150NB MRF6V2150N hatching machine MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22	PDF
transistor SMD P1f Abstract: R04003 A114 A115 FPD1000AS JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available	Original	FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f R04003 A114 A115 JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 7, 12/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications	Original	MRF6V2150N MRF6V2150NB	PDF
Untitled Abstract: No abstract text available Text: NCP130 300mA, Very Low Dropout Bias Rail CMOS Voltage Regulator The NCP130 is a 300 mA VLDO equipped with NMOS pass transistor and a separate bias supply voltage VBIAS . The device provides very stable, accurate output voltage with low noise suitable for space constrained, noise sensitive applications. In order to	Original	NCP130 300mA, NCP130 711AT NCP130/D	PDF
NCP7805 Abstract: 78XXT NCP7812TG Mj2955 power transistor A114 pnp MC7800 MJ2955 replacement isc MJ2955 transistor MJ2955 0,33 MF CAPACITOR Text: NCP7800 1.0 A Positive Voltage Regulators The NCP7800 series consists of 3 pin, fixed output, positive linear voltage regulators, suitable for a wide variety of applications. These regulators are extremely rugged, incorporating internal current limiting, thermal shutdown and safe-area compensation. With	Original	NCP7800 NCP7800 MC7800 NCP7800/D NCP7805 78XXT NCP7812TG Mj2955 power transistor A114 pnp MC7800 MJ2955 replacement isc MJ2955 transistor MJ2955 0,33 MF CAPACITOR	PDF
Untitled Abstract: No abstract text available Text: NCP120 150mA, Very Low Dropout Bias Rail CMOS Voltage Regulator The NCP120 is a 150 mA VLDO equipped with NMOS pass transistor and a separate bias supply voltage VBIAS . The device provides very stable, accurate output voltage with low noise suitable for space constrained, noise sensitive applications. In order to	Original	NCP120 150mA, NCP120 711AT NCP120/D	PDF
MRF6V2300NB Abstract: transistor A113 MRF6V2300N Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 5, 12/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are	Original	MRF6V2300N MRF6V2300NB transistor A113	PDF
Untitled Abstract: No abstract text available Text: Document Number: AFT26P100−4WS Rev. 1, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT26P100â	PDF
TRANSISTOR J477 Abstract: J890 Text: Document Number: AFT23S170−13S Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.	Original	AFT23S170â 13SR3 TRANSISTOR J477 J890	PDF

TRANSISTOR A114 E Search Results

TRANSISTOR A114 E Result Highlights (5)

TRANSISTOR A114 E Datasheets Context Search

Untitled

transistor A114

A114

A114

transistor A114

transistor a114 diagram

UM3750

Untitled

Transistor p1f

Untitled

transistor A114

marking codes transistors a1 sot-23

F35V

transistor equivalent table c101

MRF6V2300N

hatching machine

transistor SMD P1f

Untitled

Untitled

NCP7805

Untitled

MRF6V2300NB

Untitled

TRANSISTOR J477