TRANSISTOR A12 Search Results

TRANSISTOR A12 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR A12 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
1348 transistor Abstract: MPS-A12 Text: Silicon 21 Darlington Transistor M P S-A 12 The General Electric MPS-A12 is a Silicon Planar Epitaxial Passivated NPN Darlington Transistor is designed for preamp lifier input applications where high impedance is a requirement. SYMBOL Collector to Emitter	OCR Scan	MPS-A12 1348 transistor	PDF
sd1441 Abstract: SD-1441 Text: SD1441 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1441 is a12.5 V epitaxial silicon NPN plannar transistor. Designed primarily for VHF communication in the 175 MHz frequency. PACKAGE STYLE .500 6L FLG A C FEATURES: 1 3 2x Ø N FULL R • 175 MHz 12.5 V	Original	SD1441 SD1441 SD-1441	PDF
2SC2782 Abstract: NPN 2SC2782 transistor 2sc2782 Text: 2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG A C 1 3 2x Ø N FULL R D FEATURES: 2 • 175 MHz 12.5 V	Original	2SC2782 2SC2782 to175 NPN 2SC2782 transistor 2sc2782	PDF
2SC6141 Abstract: a1288 2SA222 2SA2221 2SC614 2SA22 A1288-1 230v to 5v dc circuit diagrams Text: 2SA2221/2SC6141 Ordering number : ENA1288 SANYO Semiconductors DATA SHEET 2SA2221/2SC6141 Applications • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 230V / 15A, AF100W Output Applications 230V / 15A, AF100W output applications.	Original	2SA2221/2SC6141 ENA1288 AF100W AF100W 2SA2221 A1288-4/4 2SC6141 a1288 2SA222 2SA2221 2SC614 2SA22 A1288-1 230v to 5v dc circuit diagrams	PDF
BA1200T Abstract: No abstract text available Text: Standard ICs High voltage, high current Darlington transistor array BA12001B/BA12002/BA12003B/BA12003BF/ BA12004B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high voltage withstand resistance and consisting of seven circuits of Darlington transistors.	OCR Scan	BA12001B/BA12002/BA12003B/BA12003BF/ BA12004B BA12001B, BA12002, BA12003B, BA12003BF, BA12004B BA1200T	PDF
kl2 t1 transistor Abstract: No abstract text available Text: FF 50 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values Therm ische Eigenschaften Therm al properties 0,155 "C/W Rthjc DC, pro Baustein / per module C/W DC, pro Baustein / per module	OCR Scan	10-2I-- kl2 t1 transistor	PDF
itt 3906 Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222 Text: SPRflGUE "ZT SERIES TPQ QUAD TRAHSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are eight NPN types, Five PNP types, and nine NPN/PNP dual complementary pairs.	OCR Scan	14-lead MC1439G MC1439P1 MC1741CG MC1741CP1 MC3003 MC3491P* MC7437L MC7438L MC75451P itt 3906 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222	PDF
IC 4047 Abstract: A1210 BTA1210E3 Text: CYStech Electronics Corp. Spec. No. : C656E3 Issued Date : 2004.06.03 Revised Date : Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1210E3 Description The BTA1210E3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.	Original	C656E3 BTA1210E3 BTA1210E3 O-220AB UL94V-0 IC 4047 A1210	PDF
a12-002b Abstract: LF350 BA12002 Text: Standard ICs High voltage, high current Darlington transistor array BA12001B/BA12002/BA12003B/BA12003BF/ BA12004B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high voltage withstand resistance and consisting of seven circuits o f Darlington transistors.	OCR Scan	BA12001B/BA12002/BA12003B/BA12003BF/ BA12004B BA12001B, BA12002, BA12003B, BA12003BF, BA12004B BA12004B) a12-002b LF350 BA12002	PDF
RCA H 541 Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483 Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK	OCR Scan		PDF
EM7164SU16 Abstract: No abstract text available Text: Preliminary merging Memory & Logic Solutions Inc. EM7164SU16 Series 1Mx16 Single Transistor RAM Document Title 1M x 16 bit Single Transistor RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Jul. 11 , 2005 Preliminary 0.1 1’st Revision	Original	EM7164SU16 1Mx16 690-7t 100ns 120ns	PDF
A1210 Abstract: BTA1210FP Text: CYStech Electronics Corp. Spec. No. : C656FP Issued Date : 2005.03.29 Revised Date : Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1210FP Description The BTA1210FP is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.	Original	C656FP BTA1210FP BTA1210FP O-220FP UL94V-0 A1210	PDF
A1210 Abstract: BTA1210J3 Text: CYStech Electronics Corp. Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date : Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1210J3 Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.	Original	C656J3 BTA1210J3 BTA1210J3 O-252 UL94V-0 A1210	PDF

VLN 2003 Abstract: BA12002 12003B transistor BF 257 transistor BF 258 BA12001B BA12003B BA12003BF BA12004B high current darlington transistor Text: Standard ICs High voltage, high current Darlington transistor array BA12001B/BA12002/BA12003B/BA12003BF/ BA12004B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high voltage withstand resistance and consisting o f seven circuits o f Darlington transistors.	OCR Scan	BA12001B/BA12002/B A12003B/BA12003BF/ BA12004B BA12001B, BA12002, BA12003B, BA12003BF, BA12004B VLN 2003 BA12002 12003B transistor BF 257 transistor BF 258 BA12001B BA12003B BA12003BF high current darlington transistor	PDF
Untitled Abstract: No abstract text available Text: FF 50 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values Therm ische Eigenschaften Therm al properties 0,155 "C/W Rthjc DC, pro Baustein / per module C/W DC, pro Baustein / per module	OCR Scan	10-2I--	PDF
A1210 Abstract: No abstract text available Text: Spec. No. : C656F3 Issued Date : 2007.02.02 Revised Date : Page No. : 1/5 CYStech Electronics Corp. PNP Epitaxial Planar Transistor BTA1210F3 Description The BTA1210F3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.	Original	C656F3 BTA1210F3 BTA1210F3 O-263 UL94V-0 A1210	PDF
PT10m Abstract: A1210 BTA1210J3 Text: CYStech Electronics Corp. Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date :2009.02.04 Page No. : 1/7 PNP Epitaxial Planar Transistor BTA1210J3 BVCEO IC RCESAT -120V -10A 270mΩ Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low	Original	C656J3 BTA1210J3 -120V BTA1210J3 O-252 UL94V-0 PT10m A1210	PDF
Untitled Abstract: No abstract text available Text: CY7C194BN 256 Kb 64 K x 4 Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed/power ■ Transistor transistor logic (TTL) compatible inputs and outputs	Original	CY7C194BN CY7C194BN AN1064,	PDF
10 micro farad capacitor Abstract: No abstract text available Text: CY7C199CN Automotive 256 K 32 K x 8 Static RAM Features General Description [1] • Fast access time: 12 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor-transistor logic (TTL) compatible inputs and outputs	Original	CY7C199CN 28-pin 10 micro farad capacitor	PDF
Untitled Abstract: No abstract text available Text: CY7C199CN 256 K 32 K x 8 Static RAM Features General Description [1] • Fast access time: 15 ns and 20 ns ■ Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) ■ complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor transistor logic (TTL) compatible inputs and outputs	Original	CY7C199CN CY7C199CN 28-pin	PDF
Untitled Abstract: No abstract text available Text: CY7C199CN 256 K 32 K x 8 Static RAM General Description [1] Features • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor transistor logic (TTL) compatible inputs and outputs	Original	CY7C199CN CY7C199CN 28-pin 28-pin	PDF
transistor PNP A124 Abstract: A124 transistor a124* transistor a124 pnp transistor a124 STA124M PNP A124 A124 STC128M Text: STA124M Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with STC128M Ordering Information Type NO. Marking STA124M Package Code A124	Original	STA124M STC128M O-92M KST-I005-001 transistor PNP A124 A124 transistor a124* transistor a124 pnp transistor a124 STA124M PNP A124 A124 STC128M	PDF
transistor PNP A124 Abstract: A124 transistor transistor PNP A124 EQUIVALENT a124 pnp transistor a124 a124* transistor PNP A124 STA124M a124 IC 4001 Text: STA124M Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with STC128M Ordering Information Type NO. STA124M Marking Package Code A124	Original	STA124M STC128M O-92M KST-I005-000 -100mA -500mA, -50mA transistor PNP A124 A124 transistor transistor PNP A124 EQUIVALENT a124 pnp transistor a124 a124* transistor PNP A124 STA124M a124 IC 4001	PDF

TRANSISTOR A12 Search Results

TRANSISTOR A12 Result Highlights (5)

TRANSISTOR A12 Datasheets Context Search

la 4440 amplifier circuit diagram 300 watt

1348 transistor

sd1441

2SC2782

2SC6141

BA1200T

kl2 t1 transistor

itt 3906

IC 4047

a12-002b

RCA H 541

EM7164SU16

A1210

A1210

VLN 2003

Untitled

A1210

PT10m

Untitled

10 micro farad capacitor

Untitled

Untitled

transistor PNP A124

transistor PNP A124