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    TRANSISTOR A1891 Search Results

    TRANSISTOR A1891 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    Untitled

    Abstract: No abstract text available
    Text: 2SA1891 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1891 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 1.3 W (Ta = 25 °C)


    Original     		PDF 2SA1891 2SC5028

    A1891

    Abstract: transistor A1891
    Text: 2SA1891 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1891 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 1.3 W (Ta = 25 °C)


    Original     		PDF 2SA1891 2SC5028 A1891 transistor A1891

    A1891

    Abstract: transistor A1891 2SA1891 2SC5028
    Text: 2SA1891 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1891 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 1.3 W (Ta = 25 °C)


    Original     		PDF 2SA1891 2SC5028 A1891 transistor A1891 2SA1891 2SC5028

    A1891

    Abstract: 2SA1891 2SC5028
    Text: 2SA1891 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1891 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 1.3 W (Ta = 25 °C)


    Original     		PDF 2SA1891 2SC5028 A1891 2SA1891 2SC5028