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    TRANSISTOR A30 Search Results

    TRANSISTOR A30 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GP 841 Diode

    Abstract: FH2114 A3012
    Text: FH2114 RF Power MOSFET Transistor 75W, 30-90MHz, 24V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device Meets CECOM drawing A3012711 Designed for frequency hopping systems 30-90 MHz


    Original     		PDF FH2114 30-90MHz, A3012711 GP 841 Diode FH2114 A3012

    photo transistor array

    Abstract: PHOTO TRANSISTOR
    Text: OST-1CL7 PHOTO TRANSISTOR The OST-1CL7 is a high-A30sensitivity NPN silicon phototransistor DIMENSIONS Unit:mm mounted in 3ø ceramic package.The small size and low-cost make it highly suitable for use in detector array and for both private and industrial uses.


    Original     		PDF high-A30sensitivity 940nm photo transistor array PHOTO TRANSISTOR

    A3012715

    Abstract: FH2164
    Text: ;=-=z 7=-z = -= =z an AMP company * = .-= = RF MOSFET Power Transistor, SW, 12V 30 - 90 MHz FH2164 Features l l l l l l N-Channel Enhancement Mode Device Meets CECOM Drawing A3012715 Designed for Frequency Hopping Systems 30-90 MHz Lower Capacitances for Broadband Operation


    Original     		PDF FH2164 A3012715 A3012715 FH2164

    k 815 MOSFET

    Abstract: FH2164
    Text: FH2164 RF Power MOSFET Transistor 8W, 30-90MHz, 12V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device Meets CECOM drawing A3012715 Designed for frequency hopping systems 30-90 MHz Lower capacitances for broadband operation


    Original     		PDF FH2164 30-90MHz, A3012715 k 815 MOSFET FH2164

    Thyristor bst 2

    Abstract: CA3082 transistor arrays 5v CA3081 DR2000 40736R CA3081F CA3081M CA3082M CA3082M96
    Text: CA3081, CA3082 CT UCT PRODU E T PROD E E L T O U S IT B SIL O ST -INTER E SU B 8 L 8 8 IB S 1 PO S onsData Sheet om FOR A tral Applicati @in tersil.c p n p e call C mail: centa or e General Purpose High Current NPN Transistor Arrays itle A30 , 308 bt enl rse


    Original     		PDF CA3081, CA3082 1-888-I CA3082 CA3081) CA3082) 100mA Thyristor bst 2 transistor arrays 5v CA3081 DR2000 40736R CA3081F CA3081M CA3082M CA3082M96

    transistor ac 132

    Abstract: MONOLITHIC DIODE ARRAYS fairchild A3018 MONOLITHIC DIODE ARRAYS A3054 MA3036 MA3046 UA3026HM 6 "transistor arrays" ic fla3019
    Text: MA3018 • JA3018A •pA3019 •mA3026 •pA3036 MA3039 •|jA3045 •pA3046 •\i A3054 •mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D ESC RIPTIO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed


    OCR Scan     		PDF jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 transistor ac 132 MONOLITHIC DIODE ARRAYS fairchild A3018 MONOLITHIC DIODE ARRAYS A3054 MA3046 UA3026HM 6 "transistor arrays" ic fla3019

    A3054

    Abstract: MA3036 MA3046 UA3026HM FAIRCHILD 02L 6 "transistor arrays" ic C3086
    Text: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L DESCRIPTION — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed


    OCR Scan     		PDF jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 A3054 MA3046 UA3026HM FAIRCHILD 02L 6 "transistor arrays" ic C3086

    A3018

    Abstract: MONOLITHIC DIODE ARRAYS A3054 MA3036 MA3046 UA3026HM 6 "transistor arrays" ic darlington pair power transistor transistor 1354 SS126
    Text: MA3018 • JA3018A •pA3019 •mA3026 •pA3036 MA3039 •|jA3045 •pA3046 •\i A3054 •mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E SC R IP TIO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed


    OCR Scan     		PDF jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 A3018 MONOLITHIC DIODE ARRAYS A3054 MA3046 UA3026HM 6 "transistor arrays" ic darlington pair power transistor transistor 1354 SS126

    transistor BC 667

    Abstract: bc 301 transistor A3026 transistor bc 325 two transistor forward differential pair cascode la3026 transistor differential amplifier MONOLITHIC DIODE ARRAYS MA3036
    Text: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS FA IR CH ILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed


    OCR Scan     		PDF jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 transistor BC 667 bc 301 transistor A3026 transistor bc 325 two transistor forward differential pair cascode la3026 transistor differential amplifier MONOLITHIC DIODE ARRAYS

    MONOLITHIC DIODE ARRAYS fairchild

    Abstract: A3019 pa3026 PA3019 pa3046 jA3018 diode 5D A3019HM A3054 MA3036
    Text: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS F A IR C H IL D LINEAR INTEGRATED C IR CU ITS G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed


    OCR Scan     		PDF jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 MONOLITHIC DIODE ARRAYS fairchild A3019 pa3026 PA3019 pa3046 jA3018 diode 5D A3019HM A3054

    MONOLITHIC DIODE ARRAYS fairchild

    Abstract: MA3046 vp2l DIODE IR 1F A3054 MA3036 UA3026HM MONOLITHIC DIODE ARRAYS
    Text: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS F A IR C H IL D LINEAR INTEGRATED C IR CU ITS G E N E R A L D E SC R IP TIO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed


    OCR Scan     		PDF jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 MONOLITHIC DIODE ARRAYS fairchild MA3046 vp2l DIODE IR 1F A3054 UA3026HM MONOLITHIC DIODE ARRAYS

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


    OCR Scan     		PDF

    vp 3082

    Abstract: TDA3081 TDA3082 tda 3081 TDA 1030 SIGNETICS tda 266 55812G transistor ITT CA 3082
    Text: Sign etics Interface-Transistor Arrays T D A 3081/3082 Seven Transistor Arrays C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N The T D A 3081 and T D A 308 2 are m o n o lith ic integrated c irc u its each consisting o f seven separate n-p-n transistor«,


    OCR Scan     		PDF

    CA3046 RCA

    Abstract: ICAN-5296 CA304B CA3046 CA3045 RCA-CA3018 rca CA3046 LLAM CA3045F 92CS-I52I6
    Text: D E | 3fl7SDÛl 0014b0G 5 G E SOLID STATE 01 3875081 G Arrays _ SOLID S T AT E 0 1E 1 4 600 D CA3045, CA3046 General-Purpose N-P-N Transistor Arrays Three Isolated Transistors and One DifferentiallyConnected Transistor Pair For Low-Power Applications at Frequencies


    OCR Scan     		PDF CA3045, CA3046 CA3045 CA3046 92CS-K256H1 92CS-ISI96 CA3046 RCA ICAN-5296 CA304B RCA-CA3018 rca CA3046 LLAM CA3045F 92CS-I52I6

    DARLINGTON TRANSISTOR ARRAY

    Abstract: No abstract text available
    Text: MA3018•MA3018A•MA3019•MA3026•MA3036 MA3039•HA3045•nA3046•mA3054•mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D ES C R IP T IO N — Fairch ild Transistor and Diode A rrays consist o f general purpose integrated circu it devices constructed


    OCR Scan     		PDF MA3018â MA3018Aâ MA3019â MA3026â MA3036 MA3039â HA3045â nA3046â mA3054â mA3086 DARLINGTON TRANSISTOR ARRAY

    ca3096

    Abstract: thyristor TAG 103 X 2158D 2824FF NPN PNP Transistor Arrays
    Text: CA3096, CA3096A, CA3096C H A R R IS S E M I C O N D U C T O R NPN/PNP Transistor Arrays August 1996 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    OCR Scan     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096A. CA3096C ca3096 thyristor TAG 103 X 2158D 2824FF NPN PNP Transistor Arrays

    CA3084

    Abstract: rca transistor transistor Common collector configuration CA3084 transistor common collector npn array CA3081 RCA numitron arrays 5 transistor dip.16 rca power transistor DR2000
    Text: Transistor Arrays General-Purpose High-Current n -p -n Transistor Arrays G CA3081 CA3082 Applications and Features Drivers fo r: 7-segment incandescent displays e.g. RCA N U M IT R O N DR 2000 Series L ig h t-E m ittin g -D io de s (L E D ) displays (e.g. RCA 40736R )


    OCR Scan     		PDF 9ZCS-2384 92CS-24991 16-Lead CA3081 CA3082 DR2000 40736R) CA3081 CA3082) CA3084 rca transistor transistor Common collector configuration CA3084 transistor common collector npn array CA3081 RCA numitron arrays 5 transistor dip.16 rca power transistor

    ca3096

    Abstract: CA3096AE 639 TRANSISTOR PNP CA3096E
    Text: ui H A R R CA3096 I S S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • F ive-Independent Transistors The CA3096C, CA3Û96, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    OCR Scan     		PDF CA3096 CA3096C, CA3096A CA3096A, CA3096, CA3096C CA3096. ca3096 CA3096AE 639 TRANSISTOR PNP CA3096E

    alu 74181

    Abstract: 25B22 f422 S2 f19
    Text: CFT1812A CFT1812A CFT1812A 32-bit ALU 74181-type DESCRIPTION: CFT1812A is a 32-bit ALU which is extended from the CFT1810A with the same functions. LOGIC SYMBOL : INPUTS (LOADING IN TRANSISTOR PAIRS ) : S3(4), S2(4), SI(4), SO(4 ), A31(2.5), A30(2.5),A29{2.5),


    OCR Scan     		PDF CFT1812A CFT1812A 32-bit 74181-type) CFT1810A alu 74181 25B22 f422 S2 f19

    12J60

    Abstract: a3012711 J006 FH2114 300v 10 amp n-channel mosfet R750 S M R750 transistor A4I
    Text: m an A M P company RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 V2.00 Features ♦ N-Channel Enhancement Mode Device Meets CECOM Drawing A3012711 Designed for Frequency Hopping Systems 30*90 MHz Lower Capacitances for Broadband Operation Lower Noise Figure Than Bipolar Devices


    OCR Scan     		PDF FH2114 A3012711 VOS-30 12J60 a3012711 J006 FH2114 300v 10 amp n-channel mosfet R750 S M R750 transistor A4I

    t750

    Abstract: ds 300 u810
    Text: an A M P com pany RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 Features • • • • • • N-Channel Enhancem ent Mode Device Meets CECOM Drawing A3012711 D esigned for Frequency H opping Systems 30-90 MHz I.ower Capacitances for Broadband O peration


    OCR Scan     		PDF A3012711 FH2114 t750 ds 300 u810

    transistor j4 ss 88

    Abstract: No abstract text available
    Text: an A M P com pany RF MOSFET Power Transistor, 8W, 12V 30 - 90 MHz FH2164 Features • • • • • • N-Channel Enhancem ent Mode Device Meets CECOM Drawing A3012715 D esigned for Frequency H opping Systems 30-90 MHz Lower Capacitances for Broadband O peration


    OCR Scan     		PDF A3012715 FH2164 transistor j4 ss 88

    motorola transistor 7439

    Abstract: 741TC TRANSISTOR REPLACEMENT GUIDE sprague transistors MC1304 SN75474 ULN2151D MC1310P 3067 dual transistor motorola transistor array 14 pin dip
    Text: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.


    OCR Scan     		PDF ULS-2045H ULN-2046A ULN-2047A ULN-2054A ULN-2081A MC1439G MC1439P1 MC1741CG MC1741CP1 MC3003 motorola transistor 7439 741TC TRANSISTOR REPLACEMENT GUIDE sprague transistors MC1304 SN75474 ULN2151D MC1310P 3067 dual transistor motorola transistor array 14 pin dip