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    TRANSISTOR A41 Search Results

    TRANSISTOR A41 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A41 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c102 TRANSISTOR

    Abstract: c 548 c transistor C107 transistor digital c101 TRANSISTOR C124* transistor C114y C124E Transistors General a124* transistor C144E transistor
    Text: Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 94S-389-A41 (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors General purpose transistor (dual transistors) IMX17 FFeatures 1) Two 2SD1484K chips in an SMT


    Original     		PDF 94S-389-A41) 94S-398-C41) FMG13 94S-849-A143T) 94S-877-C143T) IMX17 2SD1484K 500mA 96-523-D15) F04-C101) c102 TRANSISTOR c 548 c transistor C107 transistor digital c101 TRANSISTOR C124* transistor C114y C124E Transistors General a124* transistor C144E transistor

    a144* transistor

    Abstract: a124* transistor C144* transistor C124* transistor a114* transistor transistor a41 C124E Transistors General TRANSISTORS C144E transistor
    Text: Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 94S-389-A41 (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors General purpose transistor (isolated dual transistors) IMT17 FFeatures 1) Two 2SA1036K chips in an SMT


    Original     		PDF 94S-389-A41) 94S-398-C41) FMG13 94S-849-A143T) 94S-877-C143T) IMT17 2SA1036K 500mA 94S-366-A032) 96-427-C022) a144* transistor a124* transistor C144* transistor C124* transistor a114* transistor transistor a41 C124E Transistors General TRANSISTORS C144E transistor

    TRANSISTOR MARKING A41

    Abstract: SGA-4163
    Text: Preliminary Product Description Stanford Microdevices’ SGA-4163 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction


    Original     		PDF SGA-4163 SGA-4163 EDS-100638 TRANSISTOR MARKING A41

    SGA-4163-TR1

    Abstract: SGA-4163
    Text: Preliminary Product Description SGA-4163 Stanford Microdevices’ SGA-4163 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


    Original     		PDF SGA-4163 SGA-4163 50-ohm DC-6000 EDS-100638 SGA-4163-TR1

    TRANSISTOR MARKING A41

    Abstract: SGA-4186 TRANSISTOR a41
    Text: Product Description Stanford Microdevices’ SGA-4186 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current


    Original     		PDF SGA-4186 SGA-4186 EDS-100637 TRANSISTOR MARKING A41 TRANSISTOR a41

    TRANSISTOR MARKING A41

    Abstract: SGA-4186 34a41
    Text: Product Description Stanford Microdevices’ SGA-4186 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current


    Original     		PDF SGA-4186 SGA-4186 EDS-100637 TRANSISTOR MARKING A41 34a41

    2SC1412

    Abstract: VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK
    Text: Transistors General Purpose Transistor Common Emitter Dual Transistors UMSlN/FMSlA *Features 1) Two 2SA1037AK chips in UMT and SMT packages. @External dimensions (Units: mm) UMSl N IMSl A 2’ Mounting cost and area can be cut in half. l Structure Epitaxial planar type


    Original     		PDF 2SA1037AK SC-88A -50/iA -50pA --12V, AC221 2SC1412 VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK

    CPM1A-MAD01 manual

    Abstract: CPM1-CIF01 cpm1-cif11 omron cpm1a-40cdr-a-v1 CPM1A-MAD01 C200H Pro27 OMRON Operation Manual CPM1A-MAD11 c200h-cn320-eu CPM1A-MAD11 manual OMRON CPM1A-30CDR-A-V1 programming manual
    Text: Micro Programmable Controller CPM1A The CPM1A series micro controllers solve both basic and semi-complex applications. The brick style models include DC inputs/transistor or relay outputs to meet your design requirements. The base I/O for the CPUs ranges from 10, 20, 30, and 40 I/O points with


    Original     		PDF R301-E3-01 CPM1A-MAD01 manual CPM1-CIF01 cpm1-cif11 omron cpm1a-40cdr-a-v1 CPM1A-MAD01 C200H Pro27 OMRON Operation Manual CPM1A-MAD11 c200h-cn320-eu CPM1A-MAD11 manual OMRON CPM1A-30CDR-A-V1 programming manual

    fmg5a

    Abstract: A143E C124E A124e a124* transistor c123* transistor transistor PNP A124e C123J a144* transistor TRANSISTOR a41
    Text: Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 94S-389-A41 (94S-398-C41) 578 Transistors UMA10N / FMA10A / IMB17A UMG10N (96-388-A113Z) (94S-811-C113Z) 590 Transistors Emitter common (dual digital transistors) UMA11N / FMA11A FFeatures 1) Two DTA143Z chips in a UMT or


    Original     		PDF 94S-389-A41) 94S-398-C41) UMA10N FMA10A IMB17A UMG10N 96-388-A113Z) 94S-811-C113Z) UMA11N FMA11A fmg5a A143E C124E A124e a124* transistor c123* transistor transistor PNP A124e C123J a144* transistor TRANSISTOR a41

    C144* transistor

    Abstract: C144E transistor a144* transistor C114y c102 TRANSISTOR 96-415-C114E a114* transistor UMW10 c114e FMW1
    Text: Transistors FMG12 IMD14 96-417-C323T (96-470-IMD14) 576 Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 (94S-389-A41) (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors UMA10N / FMA10A / IMB17A UMG10N


    Original     		PDF FMG12 IMD14 96-417-C323T) 96-470-IMD14) 94S-389-A41) 94S-398-C41) FMG13 94S-849-A143T) 94S-877-C143T) UMA10N C144* transistor C144E transistor a144* transistor C114y c102 TRANSISTOR 96-415-C114E a114* transistor UMW10 c114e FMW1

    V23990-P589-A41-PM

    Abstract: V23990-P589-A vinco flowpim V23990-P589-A41 061W vincotech flowPIM
    Text: V23990-P589-A41-PM target datasheet flowPIM 1 3rd gen 1200V/25A Features flowPIM1 housing ● 3~ rectifier, BRC, Inverter, NTC ● Very compact housing, easy to route ● IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour Target Applications


    Original     		PDF V23990-P589-A41-PM 200V/25A V23990-P589-A41-PM V23990-P589-A vinco flowpim V23990-P589-A41 061W vincotech flowPIM

    Untitled

    Abstract: No abstract text available
    Text: Cascadable Amplifier 10 to 400 MHz A411/ SMA411 V3 Features • • • • Product Image LOW NOISE FIGURE: 3.0 dB TYP. HIGH EFFICIENCY: 16 mA at +5 Vdc HIGH THIRD ORDER I.P.: +29 dBm at +8 Vdc (TYP.) MEDIUM OUTPUT LEVEL:+14.5 dBm at +8 Vdc (TYP.) Description


    Original     		PDF SMA411 MIL-STD-883

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    Untitled

    Abstract: No abstract text available
    Text: KS621K40A41 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1BOO 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts O U T L I N E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in


    OCR Scan     		PDF KS621K40A41 15697-1BOO Amperes/1000

    Untitled

    Abstract: No abstract text available
    Text: 2 3 Û 3 3 C14 0Q00Ö4Ö 362 • CMBT6517 HIGH-VOLTAGE TRANSISTOR N -F -N transistor Marking CMBT6517 = 1Z PA CKA GE O U TLINE DETAILS A LL DIM ENSIO NS IN m m 3.0 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ■C> 2 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter


    OCR Scan     		PDF CMBT6517

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bb53^31 0031754 254 NPN 1 GHz video transistors APX Product specification BFQ262; BFQ262A ^ DESCRIPTION M N AflER PHILIPS/DISCRETE b'lE D PINNING NPN silicon epitaxial transistor in a SOT32 TO-126 envelope, with emitter-ballasting resistors and a


    OCR Scan     		PDF BFQ262; BFQ262A O-126) MEA280

    Untitled

    Abstract: No abstract text available
    Text: Product Description SGA-4186 Stanford M icrodevices’ SG A-4186 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


    OCR Scan     		PDF SGA-4186 50-ohm DC-6000

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    Untitled

    Abstract: No abstract text available
    Text: 131,072 WORDS X 8 BIT CMOS PRELIMINARY PSEUDO STATIC RAM DESCRIPTION The TC518128A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518128A-LV Family utilizing one transistor dynamic memory’ cell with CMOS


    OCR Scan     		PDF TC518128A-LV TC518128A -10LV, -12LV 18128A L-80LV L-10LV

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF

    BUT92A

    Abstract: No abstract text available
    Text: 7 ^ 5 ^537 Q056b57 B • SGS-THOMSON E L iO T O * ! S G S-THOMSON BUT92A 3GE D FAST SWITCHING POWER TRANSISTOR > 10 AT lc = 35A HIGH EFFICIENCY SWITCHING VERY LOW SATURATION VOLTAGE RECTANGULAR SAFE OPERATING AREA WIDE ACCIDENTAL OVERLOAD AREA m fe TO -3


    OCR Scan     		PDF Q0Eflb57 UT92A BUT92A

    A41E

    Abstract: bf0262a BFQ262 BFQ262A MEA280 BFQ262/BFQ262A
    Text: Philips Semiconductors • bbS3T31 P O S I T S 1* 55H M A P X £ NPN 1 GHz video transistors Product specification BFQ262; BFQ262A N AUER PHILIPS/DISCRETE b'iE D PINNING DESCRIPTION NPN silicon epitaxial transistor In a SOT32 TO-126 envelope, with emitter-ballasting resistors and a


    OCR Scan     		PDF bbS3T31 BFQ262; BFQ262A O-126) MEA280 DD317Sfl BFQ262A UEA279 A41E bf0262a BFQ262 MEA280 BFQ262/BFQ262A

    Untitled

    Abstract: No abstract text available
    Text: *OT » * 1990 Philips Com ponents D a te s h e e t s ta tu s P re lim in a ry s p e c ific a tio n d a te o f is s u e O c to b e r 1d 90 FEATURES • Short channel transistor with high ratio [YfelTCia. • Low noise gain controlled amplifier to 1 GHz. BF988


    OCR Scan     		PDF BF988 bbS3131