Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR A4G Search Results

    TRANSISTOR A4G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A4G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A4Y SOT23

    Abstract: transistor a4y
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR  * * * *  FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High hFE linearity Complement to MMBT1815 ORDERING INFORMATION


    Original     		PDF MMBT1015 150mA MMBT1815 MMBT1015L-x-AC3-R MMBT1015G-x-AC3-R MMBT1015L-x-AE3-R MMBT1015G-x-AE3-R MMBT1015L-x-AL3-R MMBT1015G-x-AL3-R MMBT1015L-x-AN3-R A4Y SOT23 transistor a4y

    A4Y SOT23

    Abstract: transistor a4y transistor a4g sot113 NF 723
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR „ * * * * „ FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High hFE linearity Complement to MMBT1815 ORDERING INFORMATION


    Original     		PDF MMBT1015 150mA MMBT1815 MMBT1015L-x-AC3-R MMBT1015G-x-AC3-R MMBT1015L-x-AE3-R MMBT1015G-x-AE3-R MMBT1015L-x-AL3-R MMBT1015G-x-AL3-R MMBT1015L-x-AN3-R A4Y SOT23 transistor a4y transistor a4g sot113 NF 723

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR  FEATURES * Collector-Emitter Voltage: BVCEO= -50V * Collector current up to 150mA * High hFE linearity * Complement to MMBT1815 ORDERING INFORMATION 


    Original     		PDF MMBT1015 150mA MMBT1815 MMBT1015G-x-AC3-R MMBT1015G-x-AE3-R MMBT1015G-x-AL3-R MMBT1015G-x-AN3-R MMBT1015G-x-AQ3-R OT-113 OT-23

    MARKING A4 transistor

    Abstract: A4Y SOT23 sot-23 marking 113 sot323 transistor marking MMBT1015G UTC MMBT1015 MMBT1015 MMBT1815 free transistor transistor a4y
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR „ * * * * FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High hFE linearity Complement to MMBT1815 Lead-free: MMBT1015L Halogen-free: MMBT1015G


    Original     		PDF MMBT1015 150mA MMBT1815 MMBT1015L MMBT1015G MMBT1015-x-AC3-R MMBT1015-x-AE3-R MMBT1015-x-AL3-R MMBT1015-x-AN3-R MMBT1015L-x-AC3-R MARKING A4 transistor A4Y SOT23 sot-23 marking 113 sot323 transistor marking MMBT1015G UTC MMBT1015 MMBT1015 MMBT1815 free transistor transistor a4y

    A4Y MARK SOT-23

    Abstract: MARK A4B A4Y SOT23 HMBT1015 transistor a4y
    Text: HI-SINCERITY Spec. No. : HE6804 Issued Date : 1992.08.25 Revised Date : 2004.08.10 Page No. : 1/4 MICROELECTRONICS CORP. HMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification.


    Original     		PDF HE6804 HMBT1015 HMBT1015 OT-23 200oC 183oC 217oC 260oC 245oC A4Y MARK SOT-23 MARK A4B A4Y SOT23 transistor a4y

    transistor a4y

    Abstract: A4Y SOT23 HMBT1015
    Text: HI-SINCERITY Spec. No. : HE6804 Issued Date : 1992.08.25 Revised Date : 2002.10.25 Page No. : 1/3 MICROELECTRONICS CORP. HMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification.


    Original     		PDF HE6804 HMBT1015 HMBT1015 OT-23 transistor a4y A4Y SOT23

    Untitled

    Abstract: No abstract text available
    Text: MMBT1015W PNP Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 Description A The MMBT1015W is designed for use in driver stage of AF amplifier and general purpose amplification. L 3 1 Top View V B S 2 G COLLECTOR


    Original     		PDF MMBT1015W OT-323 MMBT1015W -100mA, -10mA 300us, 01-Jun-2002

    transistor a4y

    Abstract: transistor a4g FMBT1015
    Text: PNP Epitaxial Planar Transistor Data Sheet Mechanical Dimensions FMBT1015 Description .110 .060 3 3 .037 2 2 .115 .037 .016 2 3 1 1 1 .043 .016 .004 Maximum Ratings Ratings Collector - Emitter Voltage Symbol VCEO Collector - Base Voltage VCBO -50 V Emitter - Base Voltage


    Original     		PDF FMBT1015 FMBT1015 transistor a4y transistor a4g

    transistor af 126

    Abstract: JESD22-B-107-A J-STD-029 mount chip transistor 332
    Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 17.0 A K = 1/4 Rout = 25 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 200 Watt 300 Watt for 1 mS • 125°C operation • High density – up to 800 W/in3


    Original     		PDF B048K120T20 7/03/10M transistor af 126 JESD22-B-107-A J-STD-029 mount chip transistor 332

    JESD22-A-103A

    Abstract: jesd22-a-104B JESD22 A-102 JESD22-A-101 JESD22-B-107-A converter 48 to 24 switching
    Text: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K480T30 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 48 V V•I Chip Converter • Typical efficiency 96% • 300 Watt 450 Watt for 1 ms


    Original     		PDF B048K480T30 JESD22-A-103A jesd22-a-104B JESD22 A-102 JESD22-A-101 JESD22-B-107-A converter 48 to 24 switching

    48V-to-12V

    Abstract: smd TRANSISTOR marking T1
    Text: V•I Chip – BCM Bus Converter Module TM B048K120T15 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 12.5 A K = 1/4 Rout = 32 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 150 Watt 225 Watt for 1 ms • 125°C operation • High density – up to 600 W/in3


    Original     		PDF B048K120T15 11/03/10M 48V-to-12V smd TRANSISTOR marking T1

    Untitled

    Abstract: No abstract text available
    Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 17.0 A K = 1/4 Rout = 25 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 200 Watt 300 Watt for 1 mS • 125°C operation • High density – up to 800 W/in3


    Original     		PDF B048K120T20 8/03/10M

    IPC-9701

    Abstract: JESD22-A-101
    Text: PRELIMINARY V•I Chip Voltage Transformation Module BCM V•I Chip – BCM Bus Converter Module TM B048K120T30 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 12 V V•I Chip Converter • 96% efficiency • 300 Watt 450 Watt for 1 ms


    Original     		PDF B048K120T30 IPC-9701 JESD22-A-101

    BCM reflow

    Abstract: smd transistor marking SG smd transistor v2 IPC-9701
    Text: V•I Chip – BCM Bus Converter Module TM B048K120T10 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 8.3 A K = 1/4 Rout = 32 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 100 Watt 150 Watt for 1 ms • 125°C operation • High density – up to 400 W/in3


    Original     		PDF B048K120T10 11/03/10M BCM reflow smd transistor marking SG smd transistor v2 IPC-9701

    Untitled

    Abstract: No abstract text available
    Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 + + –K – • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3 • 1 µs transient response • Small footprint – 200 W/in • >3.5 million hours MTBF


    Original     		PDF B048K120T20 02/04/10M

    IPC-9701

    Abstract: F17a
    Text: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K160T24 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 16 V V•I Chip Converter • Typical efficiency 96% • 240 Watt 360 Watt for 1 ms


    Original     		PDF B048K160T24 IPC-9701 F17a

    SMD capacitor 106c

    Abstract: capacitor SMD 106C JESD22-A-101
    Text: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K096T24 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 9.6 V V•I Chip Converter • Typical efficiency 96% • 240 Watt 360 Watt for 1 ms


    Original     		PDF B048K096T24 SMD capacitor 106c capacitor SMD 106C JESD22-A-101

    Untitled

    Abstract: No abstract text available
    Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 17.0 A K = 1/4 Rout = 25 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 200 Watt 300 Watt for 1 mS • 125°C operation • High density – up to 800 W/in3


    Original     		PDF B048K120T20 7/03/10M

    V2 smd transistor

    Abstract: B048K060T24 JESD22-A-103A JESD22-A-104B JESD22-A113-B SMD TRANSISTOR MARKING 2.x
    Text: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K060T24 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 6 V V•I Chip Converter • Typical efficiency 95% • 240 Watt 360 Watt for 1 ms


    Original     		PDF B048K060T24 V2 smd transistor B048K060T24 JESD22-A-103A JESD22-A-104B JESD22-A113-B SMD TRANSISTOR MARKING 2.x

    Untitled

    Abstract: No abstract text available
    Text: V•I Chip – BCM Bus Converter Module TM B048K096T24 + + –K – • >96% efficiency • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – up to 960 W/in3 • <1 µs transient response • Small footprint – 240 W/in • >3.5 million hours MTBF


    Original     		PDF B048K096T24 02/04/10M

    Untitled

    Abstract: No abstract text available
    Text: HM-8808-8 HM-8808A-8 HARRIS 8K x 8 Asynchronous CMOS Static RAM Module June 1989 P in o u ts Features • • • • • • • • • • • • • • TOP VIEW Full CMOS Design 6 Transistor Memory Cell Low Standby Current. 250/900 jA


    OCR Scan     		PDF HM-8808-8 HM-8808A-8 100/120/150ns HM-8808A) HM-8808 HM-8808A

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


    OCR Scan     		PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


    OCR Scan     		PDF 10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d