2SA1774
Abstract: 2SC4617
Text: UTC 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617 MARKING 2 1 A5 3 SOT-523 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER Collector-Base Voltage
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2SA1774
2SC4617
OT-523
QW-R221-011
2SA1774
2SC4617
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DTA143X
Abstract: DTA143XL
Text: UTC DTA143X PNP DIGITAL TRANSISTOR PNP DIGITAL TRANSISTOR FEATURES * Built-in bias thin film resistors per equivalent circuit * Easy on/off applications 2 1 3 EQUIVALENT CIRCUIT IN MARKING OUT R1 SOT-523 A5X R2 GND + IN OUT 1: GND 2: IN 3: OUT *Pb-free plating product number:DTA143XL
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DTA143X
OT-523
DTA143XL
QW-R221-007
DTA143X
DTA143XL
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BY206
Abstract: BRY61 BZY88C8V2 BRY61 EQUIVALENT "Programmable Unijunction Transistor" unijunction application note
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 1999 Apr 27 Philips Semiconductors Product specification Programmable unijunction transistor DESCRIPTION
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M3D088
BRY61
MGL167
MGC421
SCA63
115002/00/03/pp8
BY206
BRY61
BZY88C8V2
BRY61 EQUIVALENT
"Programmable Unijunction Transistor"
unijunction application note
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"Programmable Unijunction Transistor"
Abstract: BY206 Programmable Unijunction Transistor transistor K 2333 BZY88C8V2 BZY88C str 6707 equivalent MEA141 BRY61 BRY61 EQUIVALENT
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BRY61 Programmable unijunction transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 21 Philips Semiconductors Product specification Programmable unijunction transistor
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M3D088
BRY61
MGL167
MGC421
SCA55
117047/00/02/pp12
"Programmable Unijunction Transistor"
BY206
Programmable Unijunction Transistor
transistor K 2333
BZY88C8V2
BZY88C
str 6707 equivalent
MEA141
BRY61
BRY61 EQUIVALENT
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617 ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2SA1774L-x-AE3-R
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2SA1774
2SC4617
2SA1774L-x-AE3-R
2SA1774G-x-AE3-R
OT-23
2SA1774L-x-AN3-R
2SA1774G-x-AN3-R
OT-523
2SA1774L-x-AQ3-R
2SA1774G-x-AQ3-R
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure
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M3D124
BFU510
BFU510
MSB842
125104/00/04/pp11
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EIA-556-A
Abstract: sot-23 marking 9D transistor marking 9D NF 723 L2SA1365 marking A5F application of IC 723 EIA-556A H SOD723
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor L2SA1235FLT1G DESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, it is designed for low frequency voltage application. . 3 FEATURE ● Small collector to emitter saturation voltage.
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L2SA1235FLT1G
L2SA1365FLT1G
195mm
150mm
10Reel/Inner
30KPCS/Inner
3000PCS/Reel
40KPCS/Inner
OT-723
EIA-556-A
sot-23 marking 9D
transistor marking 9D
NF 723
L2SA1365
marking A5F
application of IC 723
EIA-556A
H SOD723
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10GHz oscillator
Abstract: 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RF TRANSISTOR 2.5 GHZ s parameter RCS9 "MARKING CODE A5*" 6 pins IC cbe LC marking code transistor RF NPN POWER TRANSISTOR 2.5 GHZ
Text: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 Nov 08 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure
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M3D124
BFU510
SCA73
125104/00/04/pp12
10GHz oscillator
4 pin dual-emitter
RF TRANSISTOR 10GHZ
BFU510
RF TRANSISTOR 2.5 GHZ s parameter
RCS9
"MARKING CODE A5*"
6 pins IC cbe
LC marking code transistor
RF NPN POWER TRANSISTOR 2.5 GHZ
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor L2SA1235FLT1G DESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, it is designed for low frequency voltage application. . FEATURE 3 ● Small collector to emitter saturation voltage.
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L2SA1235FLT1G
L2SA1365FLT1G
OT-23
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marking A5F
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, it is designed for low frequency voltage application. L2SA1235FLT1G S-L2SA1235FLT1G . FEATURE ● Small collector to emitter saturation voltage.
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L2SA1365FLT1G
L2SA1235FLT1G
S-L2SA1235FLT1G
AEC-Q101
OT-23
marking A5F
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Untitled
Abstract: No abstract text available
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
LM96163
2N3904,
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Untitled
Abstract: No abstract text available
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
2N3904,
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BFU510
Abstract: SiGe POWER TRANSISTOR
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU510 NPN SiGe wideband transistor Product specification Supersedes data of 2001 Nov 08 2003 Jun 12 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU510 FEATURES PINNING • Very high power gain
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M3D124
BFU510
SCA75
613516/03/pp16
BFU510
SiGe POWER TRANSISTOR
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PDF
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. REDFET with fast recovery
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BUK637-500B
BUK637-500B
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PDF
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Untitled
Abstract: No abstract text available
Text: SANYO SEMI CON DUCTOR LB 1 2 1 3 M! :?«5«*a5S6%e9 15E i "I" 7TÌ7 D 7 t DUJ.hl.lh = | CORP •'P4 S-2.5’ 10 M onolithic Digital 1C 3035A General-Purpose Transistor Array 1354B The LB1213M is a general-purpose transistor array containing 7 channels.
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1354B
LB1213M
035A-M16IC
7067KI/7315KI/9133KI
LB1213M
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programmable unijunction transistor
Abstract: "Programmable Unijunction Transistor" ph a5 transistor
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification Programmable unijunction transistor
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BRY61
BRY61
MGL167
115002/00/03/pp8
programmable unijunction transistor
"Programmable Unijunction Transistor"
ph a5 transistor
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CM2025
Abstract: w65 transistor npn, transistor, sc 109 b T3D 34 BUV11N transistor 3-440
Text: MOTOROLA SC XSTRS/R F 15E D I b3b?a54 G O û lflâ B 5 I 7 ^ 3 3 MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA NPN SILICON POWER METAL TRANSISTOR . designed for high speed, high current, high power applications. NPN SILICON POWER METAL TRANSISTOR 20 A M P E R E S
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AN415A)
CM2025
w65 transistor
npn, transistor, sc 109 b
T3D 34
BUV11N
transistor 3-440
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PDF
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Untitled
Abstract: No abstract text available
Text: OLE D N AUER PHILIPS/DISCRETE 86D 01878 D r - ^^53=131 DD1411L t> jt 1 BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilitary transmitters with a supply voltage o f 13,5 V . The transistor is resistance stabilized and is guaranteed to
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DD1411L
BLY87A
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PDF
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D1133
Abstract: transistor D1133 EQUIVALENT number transistor D1133 EQUIVALENT CIRCUIT transistor D1133 7405AN D1133 EQUIVALENT CIRCUIT truth table inverter gate 74 Inverter Gates FJH321 FJH321A
Text: T.T.L. SEXTUPLE SINGLE INPUT INVERTER GATES FIH 3 2 I FJH3 2 IA Corresponds to 74 Series type 7405AIM P R O V IS IO N A L D A T A These d evices are transistor-transistor logic sextuple single-input inverter gates, with a single-ended open collector output transistor, in the FJ s e r ie s of integrated
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FIH32I
FJH32IA
7405AN
FJH321
7405AN.
O-116
FJH321-Page
D1133
D1133
transistor D1133 EQUIVALENT number
transistor D1133 EQUIVALENT CIRCUIT
transistor D1133
7405AN
D1133 EQUIVALENT CIRCUIT
truth table inverter gate 74
Inverter Gates
FJH321A
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BUK455-60A/B
Abstract: BUK455-60A
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK455-60A/B
BUK455
T0220AB
CONFIGURATION1993
BUK455-60A/B
BUK455-60A
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PDF
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BUK856-450IX
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor Protected IGBT GENERAL DESCRIPTION Protected N-channel insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener
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BUK856-450IX
T0220AB
BUK856-450IX
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PDF
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3004x
Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for
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fl23SbOS
0G04737
BFX55
Q60206-X55
fl235bOS
3004x
Transistor BFX 59
634 transistor
bfx 63
63310-A
BFX55
D-10
Q60206-X55
Transistor BFX 90
BFX 79
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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OCR Scan
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BUK456-60A/B
BUK456
T0220AB
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PDF
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