SGA-5489
Abstract: No abstract text available
Text: Preliminary Product Description SGA-5489 Stanford Microdevices’ SGA-5489 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-5489
SGA-5489
50-ohm
DC-4000
EDS-100618
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AE8 diode
Abstract: 4a8 diode diode marking A43 DIODE S6 4aa BV99 aA88 IPB120N06N G
Text: IPB120N06N G IPP120N06N G "%&$!"# Power-Transistor Product Summary Features . V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4; I &/ D4@A8 >= X" /- I9 6 O R >? 4@0B 8=6 B
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IPB120N06N
IPP120N06N
AE8 diode
4a8 diode
diode marking A43
DIODE S6 4aa
BV99
aA88
IPB120N06N G
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IPP050N06NG
Abstract: diode a43 IPB050N06NG
Text: IPP050N06N G IPB050N06N G "%&$!"# Power-Transistor Product Summary Features V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4; D4@A8 >= I9 . I ,&/ X" ( 6 O R >? 4@0B 8=6 B
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IPP050N06N
IPB050N06N
IPP050N06NG
diode a43
IPB050N06NG
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Untitled
Abstract: No abstract text available
Text: Cascadable Amplifier 5 to 500 MHz A54/ SMA54 V3 Features Product Image • HIGH GAIN— TWO STAGES; 27.5 dB TYP. • MEDIUM OUTPUT LEVEL: +8 dBm (TYP.) • LOW VSWR:<1.4:1 (TYP.) Description The A54 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance
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SMA54
MIL-STD-883
SMA54
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CA54
Abstract: SMA54 TRANSISTOR A54
Text: A54 / SMA54 Cascadable Amplifier 5 to 500 MHz Rev. V3 Features Product Image • HIGH GAIN— TWO STAGES; 27.5 dB TYP. • MEDIUM OUTPUT LEVEL: +8 dBm (TYP.) • LOW VSWR:<1.4:1 (TYP.) Description The A54 RF amplifier is a discrete hybrid design, which uses
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SMA54
MIL-STD-883
CA54
SMA54
TRANSISTOR A54
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CA54
Abstract: SMA54 TRANSISTOR A54
Text: A54/SMA54 5 TO 500 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 27.5 dB TYP. · MEDIUM OUTPUT LEVEL: +8 dBm (TYP.) · LOW VSWR: <1.4:1 (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small Signal Gain (min.)
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A54/SMA54
SMA54
CA54
SMA54
TRANSISTOR A54
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Untitled
Abstract: No abstract text available
Text: A54/SMA54 5 TO 500 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 27.5 dB TYP. · MEDIUM OUTPUT LEVEL: +8 dBm (TYP.) · LOW VSWR: <1.4:1 (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small Signal Gain (min.)
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A54/SMA54
SMA54
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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CM2025
Abstract: w65 transistor npn, transistor, sc 109 b T3D 34 BUV11N transistor 3-440
Text: MOTOROLA SC XSTRS/R F 15E D I b3b?a54 G O û lflâ B 5 I 7 ^ 3 3 MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA NPN SILICON POWER METAL TRANSISTOR . designed for high speed, high current, high power applications. NPN SILICON POWER METAL TRANSISTOR 20 A M P E R E S
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AN415A)
CM2025
w65 transistor
npn, transistor, sc 109 b
T3D 34
BUV11N
transistor 3-440
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MPS-U02
Abstract: mpsu02 H R C M F 3B 334 MPS-U52 Motorola MPSU02 motorola transistor r 724 MPSU52
Text: MO TO RO LA SC XSTRS/R F 15E D | fc>3b?SSM 0005407 S | * MOTOROLA SEMICONDUCTOR MPS-U02 TECHNICAL DATA Æ gWP^ I LICON A N N U LA R ~ FIER TRANSISTOR kg iW for general-purpose, high-voltage amplifier and tions. • m NPN SILICON AM PLIFIER TRANSISTOR High Power Dissipation — Pq * 10 W @ T c - 25°C
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MPS-U02
MPS-U52
MPS-U02
mpsu02
H R C M F 3B 334
MPS-U52
Motorola MPSU02
motorola transistor r 724
MPSU52
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Untitled
Abstract: No abstract text available
Text: Product Description SGA-5486 Stanford M icrodevices’ SG A-5486 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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50-ohm
SGA-5486
DC-2400
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS3^31 HF/VHF power MOS transistor — ^ — — FEATURES QDBTTS? H lfl APX Product specification BLF241E N AUER PHILIPS/DISCRETE b^E D PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability
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BLF241E
O-39/3)
MBA379
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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Untitled
Abstract: No abstract text available
Text: Thlïï H EW L E T T K KÆPA CK A R D 4.8 V NPN Common Em itter Output Power Transistor for GSM Class IV Phones Technical Data AT-36408 Features • 4.8 Volt Pulsed Operation pulse width = 577 |isec, duty cycle = 12.5% SOIC-8 Surface Mount Plastic Package
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AT-36408
AT-36408
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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MRF2001M
Abstract: motorola transistor r 724 MRF2001
Text: 12E D I t3b?ESM 0000024 T | MO T OR OL A SC r - 33-o¿r XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA _ T h e R F L in e _ 1 .0 W 2 GHz NPN SILICON MICROWAVE POWER TRANSISTOR M IC R O W A V E POWER T R A N S IS TO R . . . designed for Class B and C common base broadband amplifier
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MRF2001M
MRF2001M
motorola transistor r 724
MRF2001
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MTP2N85
Abstract: MTP2N90 td 3404 ap n1TM transistor 3405 motorola MTM2N85
Text: IM E M O TO RO LA SC X S T R S / R D I b 3 b 7 2 S 4 Q Q f i'n b ö 5 | F M O TO R O LA • SEMICONDUCTOR T E C H N IC A L D A T A MTM2N85 MTM2N90 MTP2N85 MTP2N90 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS
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MTM2N85
MTM2N90
MTP2N85
MTP2N90
021SBSC
21A-04
O-220AB
0005KS)
T0-204M
MTP2N90
td 3404 ap
n1TM
transistor 3405 motorola
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Untitled
Abstract: No abstract text available
Text: 131,072 W O R D S X 8 BIT C M O S P SEU D O STATIC R A M DESCRIPTIO N The TC518129A Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A Family utilizing one transistor dynamic memory cell with CMOS peripheral circuit provides large capacity , high speed and low power features. The feature includes
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TC518129A
18129AFW-12,
TC518129AFWL-12
TC518129AP/ASP/AF/AFWâ
TC518129APL/ASPL/AFL/AFWLâ
TC518129AFTL/ATRLâ
TSOP32
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TP2370
Abstract: No abstract text available
Text: 1 EE D I L3b?2S4 MOTOROLA SC 0000231 XSTRS/R M | T"33- ^ F MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA TP237Ö The RF Line V H F P o w e r T ra n sisto r The TP2370 transistor is intended for land m obile applications operating over the 145-175 M H z frequency range w ith typical vehicular pow er supplies.
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TP237Ö
TP2370
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J01006
Abstract: transformer mttf UNELCO DSR5050
Text: 15E D I L3h7aS4 MOTOROLA MOTOROLA SC GOaPEOO XSTRS/R T | F SEM ICO NDUCTO R TECHNICAL DATA J01006 The RF Line V H F Power Transistor . . . d e s ig n e d p r im a rily fo r w id e b a n d la rg e -s ig n a l o u tp u t a m p lifie r stag es in 3 0 - 2 0 0 M H z
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J01006
16A-01,
1x1010
1x103
1x105
transformer mttf
UNELCO
DSR5050
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transistor TA78
Abstract: TA57 ta76 ic TA76 TA54/TA57/TA60/TA61/TA64/TA76/TA78 ta64
Text: h -7 > y 7s £ /T ra n sisto rs TA54/T A57/T A60/T A61 /T A64/T A76/T A78 T A 5 4 /T A 5 7 /T A 6 0 /T A 6 1 T A 6 4 /T A 7 6 /T A 78 1 f c f T i i - ' f i ' - i - M y ' =i > Epitaxial Planar Silicon Transistor Arrays • W F ^ T liill/ D im e n s io n s U n it: mm)
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TA54/T
A57/T
A60/T
A64/T
A76/T
12pin
TA54/TA57/TA60/TA61
/TA64/T
A76/TA78
transistor TA78
TA57
ta76 ic
TA76
TA54/TA57/TA60/TA61/TA64/TA76/TA78
ta64
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MTH8N55
Abstract: DIODE MOTOROLA B33 MTM8N60 3fc relay 000073S AN569 MTH8N60 U055 TO 521 MH
Text: MOTOROLA SC IME D I XSTRS/R F b3 b?a SM O Oâ ^a bT 3 I S f -1 5 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M T H 8N 55 MTH8ÏM60 M TM 8N60 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S T h e s e T M O S P o w e r FETs are d e s ig n e d fo r h ig h v o lta g e , high
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MTH8N55
MTH8N60
MTM8N60
Y145M.
O-218AC
DIODE MOTOROLA B33
3fc relay
000073S
AN569
U055
TO 521 MH
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TRANSISTOR BC 137
Abstract: WJ-A54 TRANSISTOR BC 158 transistor bc 144 WJ-CA54
Text: uuU A54/SMA54 5 to 400 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 27.5 dB TYP. MEDIUM OUTPUT LEVEL: +8 dBm (TYP.) LOW VSWR: <1.4:1 (TYP.) Outline Drawings A54 J Specifications'* 0.200 (5.08) Frequency (Min.)
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A54/SMA54
1-800-WJ1
TRANSISTOR BC 137
WJ-A54
TRANSISTOR BC 158
transistor bc 144
WJ-CA54
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POWER-12
Abstract: POWER12 WJ-A54 WJA54 sma545
Text: WJ-A54/ SMA54 5 to 400 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 27.5 dB TYP. MEDIUM OUTPUT LEVEL: +8 dBm (TYP.) LOW VSWR: < 1.4:1 (TYP.) Outline Drawings A54 0.450 D <1U1)D Specifications’* Frequency (Min.)
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WJ-A54/
SMA54
POWER-12
POWER12
WJ-A54
WJA54
sma545
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