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    TRANSISTOR A5G Search Results

    TRANSISTOR A5G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A5G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Transistor Equivalent list

    Abstract: transistor A5G "RF MOSFET" DU2860U 300 Amp mosfet resistor 300 ohms equivalent transistor rf mosfet 800 v DU2860
    Text: s2zz-f rgy= e -A5g =r- -=- an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 6OW, 28V DU2860U v2.00 Features A 4Gl. N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices


    Original     		DU2860U 9-18OpF Transistor Equivalent list transistor A5G "RF MOSFET" DU2860U 300 Amp mosfet resistor 300 ohms equivalent transistor rf mosfet 800 v DU2860 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKHI 23/12 R . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions ?.1C3 '7 69CH G.H 69CKK G.H jCA=*BA310 ;CB


    Original     		OCAP30 LCAB30-1N PDF

    3029 ifc arm

    Abstract: Trident frc iso7816 sim AGERE DSP 0xE0000034 20-pin JTAG interface connector motorola isri wic 2T mc4053 Trident II
    Text: Advance Data Sheet January 14, 2002 Trident Production Devices Trident 0.25 µm /Trident II (0.20 µm) 1 Features • Package options: — Trident (0.25 µm): 196-pin FSBGA. 12 mm x 12 mm. 0.8 mm ball pitch. — Trident II (0.20 µm): Package A: 196-pin FSBGA.


    Original     		DSP16000 DS02-020WMA DS01-275WMA) 3029 ifc arm Trident frc iso7816 sim AGERE DSP 0xE0000034 20-pin JTAG interface connector motorola isri wic 2T mc4053 Trident II PDF

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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    TRANSISTOR 8808 W

    Abstract: HM5-8808A-8 8808 FTD01 HM-8808A HM5-8808B-8
    Text: i l l H a r r is o u HM-8808 HM-8808A .,co .u c,o - 8K x 8 Asynchronous CMOS Static RAM Module January 1992 Features Description • Full CMOS Design The HM-8808 and HM-8808A are 8K x 8 Asynchronous CMOS Static RAM Modules, based on multi-layered, co-fired, dual-in-line


    OCR Scan     		HM-8808 HM-8808A HM-8808A HM-6S162 HM-65162 HM8808) HM-8808A) TRANSISTOR 8808 W HM5-8808A-8 8808 FTD01 HM5-8808B-8 PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp PDF

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


    OCR Scan     		10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d PDF

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


    OCR Scan     		thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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