2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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Untitled
Abstract: No abstract text available
Text: BCP 54 NPN SILICON TRANSISTOR QUICK REFERENCE DATA Medium power NPN sIllcon transistor tn a mtntature plastic envelope Intended for use In drwer stages of audio amplifier telephony and general mdustnal appllcatlon T VCBO = 45 V VCEO = 45 V VEBO=5V ICM = 1.5A
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-100mA
-10mA
Mar-97
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A6331
Abstract: No abstract text available
Text: Product Description Stanford Microdevices SGA-6389 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-6389
SGA-6389
DC-4500
EDS-100620
A6331
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TRANSISTOR A63
Abstract: 5894 A63 marking amplifier DC-3000 SGA-6386
Text: Product Description Stanford Microdevices SGA-6386 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-6386
SGA-6386
DC-3000
EDS-100614
TRANSISTOR A63
5894
A63 marking amplifier
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TRANSISTOR A63
Abstract: EDS-100620 SGA-6389 a63 TRANSISTOR
Text: Product Description Stanford Microdevices SGA-6389 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-6389
SGA-6389
DC-4000
EDS-100620
TRANSISTOR A63
a63 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: Product Description Stanford Microdevices SGA-6386 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-6386
EDS-100614
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2SC4247
Abstract: No abstract text available
Text: TOSHIBA 2SC4247 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4247 Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR • 2.1 ±0.1 Transition Frequency is High and Dependent on Current Excellently. MAXIMUM RATINGS (Ta = 25°C)
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2SC4247
SC-70
2SC4247
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EDS-100620
Abstract: No abstract text available
Text: Preliminary Product Description SGA-6389 Stanford Microdevices’ SGA-6389 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to
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SGA-6389
50-ohm
SGA-6389
DC-4000
EDS-100620
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Untitled
Abstract: No abstract text available
Text: Product Description SGA-6386 Stanford M icrodevices’ SG A-6386 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to
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50-ohm
SGA-6386
DC-3000
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70413080
Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919
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2N3391
SPS-953
MPS-8097,
2N6520
MPS-A18,
2N6539,
SK-3919
2N4249
SPS-690,
PN-2907A
70413080
70473180
SAC-187
Motorola 70483180
70483100
70484200
70487478
70484140
SJ-6357
70483180
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR tm MPSA63 MMBTA63 PZTA63 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings TA = 25°C unless otherwise noted
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MPSA63
MMBTA63
PZTA63
MPSA64
MPSA63
MMBTA63
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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FJJ141/A
2305D
FJJ181/A
2305E/848
FJJ191/A
FJL101/A
CD2306D
FJY101/A
2306E/832
CD2307/944
3TE445
2N3303
ECC88
TAA*310
B9D TRANSISTOR
BYY32
GEX36/7
Ferranti zs70
6ej7
3n159
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2N6379
Abstract: 2N6378 MIL-PRF19500 be5a
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 1999 INCH-POUND MIL-PRF-19500/515C 25 July 1999 SUPERSEDING MIL-S-19500/515B 15 March 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER
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MIL-PRF-19500/515C
MIL-S-19500/515B
2N6378,
2N6379
MIL-PRF-19500,
2N6378
MIL-PRF19500
be5a
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a6378
Abstract: 2N6378 JANTX 2N6378 2N6379 3041 v
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 June 2007. INCH-POUND MIL-PRF-19500/515D 12 March 2007 SUPERSEDING MIL-PRF-19500/515C 25 July 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER,
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MIL-PRF-19500/515D
MIL-PRF-19500/515C
2N6378
2N6379,
MIL-PRF-19500.
a6378
2N6378 JANTX
2N6379
3041 v
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TRANSISTOR A63
Abstract: sot23 A63 a63 TRANSISTOR MPSA63 MMBTA63 MPSA64 PZTA63
Text: MPSA63 MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.
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MPSA63
MMBTA63
PZTA63
OT-23
OT-223
MPSA64
MPSA63
MMBTA63
TRANSISTOR A63
sot23 A63
a63 TRANSISTOR
PZTA63
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR tm MPSA63 MMBTA63 PZTA63 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. See M PSA64 for characteristics. Absolute Maximum RâtinÇjS T A = 25°C unless o th e rw ise noted
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MPSA63
MMBTA63
PZTA63
MPSA63
MMBTA63
PSA64
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25c reference top mark sot23
Abstract: sot23 A63
Text: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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MPSA63
MMBTA63
PZTA63
MPSA63
MMBTA63
OT-23
OT-223
MPSA64
25c reference top mark sot23
sot23 A63
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MPSA63
Abstract: TRANSISTOR A63 MMBTA63 MPSA64 PZTA63 Transistor MPSA63
Text: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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MMBTA63
PZTA63
OT-23
OT-223
MPSA64
MPSA63
TRANSISTOR A63
MMBTA63
PZTA63
Transistor MPSA63
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TRANSISTOR A63
Abstract: sot23 A63 FAIRCHILD SOT-223 MARK MPSA64 MMBTA63 MPSA63 PZTA63
Text: S E M IC O N D U C T O R tm MMBTA63 SOT-23 PZTA63 B / PZTA63 TO-92 / MMBTA63 MPSA63 SOT-223 M a rk : 2U PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61.
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MPSA63
MMBTA63
OT-23
PZTA63
OT-223
MPSA64
TRANSISTOR A63
sot23 A63
FAIRCHILD SOT-223 MARK
MMBTA63
MPSA63
PZTA63
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M57962AL
Abstract: applications of ujt IGBT with V-I characteristics UJT APPLICATION TDS340A PC817 ujt transistor am503s IGBT 10 A igbt high power
Text: 2000 * m 5 gj IGBT Miihfc B p A -^ i f c t f c l * # 200331 tt# Ä . * à iitfc T Î* IÇ Â Æ + W a * # « , $ f t i 3 IGBT & £ £ # £ : ! * 3B# tfTC, 1 31 la & ä fc # jR S J I f r f IGBT (Insulated Gate Bipolar Transistor) ;êlÉJ BIT MOSFET älj&ÖilSi'ä'
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M57962AL
TDS340A,
AM503S
A6302iEi
M57962AL,
M57962AL)
applications of ujt
IGBT with V-I characteristics
UJT APPLICATION
TDS340A
PC817
ujt transistor
IGBT 10 A
igbt high power
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Untitled
Abstract: No abstract text available
Text: 131,072 W O R D S X 8 BIT C M O S P SEU D O STATIC R A M DESCRIPTIO N The TC518129A Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A Family utilizing one transistor dynamic memory cell with CMOS peripheral circuit provides large capacity , high speed and low power features. The feature includes
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TC518129A
18129AFW-12,
TC518129AFWL-12
TC518129AP/ASP/AF/AFWâ
TC518129APL/ASPL/AFL/AFWLâ
TC518129AFTL/ATRLâ
TSOP32
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TRANSISTOR A63
Abstract: No abstract text available
Text: Cascadable Amplifier 5 to 1000 MHz A63/ SMA63 V3 Features Product Image • LOW NOISE: 3.0 dB TYP. • MEDIUM THIRD ORDER I.P.: +15 dBm (TYP.) • HIGH GAIN: 16 dB (TYP.) Description The A63 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance
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SMA63
MIL-STD-883
SMA63
TRANSISTOR A63
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TRANSISTOR A63
Abstract: a63 TRANSISTOR SMA63 CA63
Text: A63 / SMA63 Cascadable Amplifier 5 to 1000 MHz Rev. V3 Features Product Image • LOW NOISE: 3.0 dB TYP. • MEDIUM THIRD ORDER I.P.: +15 dBm (TYP.) • HIGH GAIN: 16 dB (TYP.) Description The A63 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance
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SMA63
MIL-STD-883
TRANSISTOR A63
a63 TRANSISTOR
SMA63
CA63
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Untitled
Abstract: No abstract text available
Text: A63/SMA63 5 TO 1000 MHz CASCADABLE AMPLIFIER • LOW NOISE: 3.0 dB TYP. · MEDIUM THIRD ORDER I.P.: +15 dBm (TYP.) · HIGH GAIN: 16 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 12/00)* Characteristics Typical Frequency Small Signal Gain (min.)
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A63/SMA63
SMA63
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