STA6610
Abstract: a6610 76A6
Text: S T A6610 S amHop Microelectronics C orp. Nov.24 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y S uper high dense cell design for low R DS ON . V DS S ID 30V 7.6A R DS (ON) ( m Ω ) Max R ugged and reliable.
|
Original
|
A6610
STA6610
STA6610
a6610
76A6
|
PDF
|
STA6620
Abstract: A6620
Text: S T A6620 S amHop Microelectronics C orp. Nov. 24 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS ON . R DS (ON) ( m Ω ) Max ID R ugged and reliable. 25 @ V G S = 10V
|
Original
|
A6620
STA6620
STA6620
A6620
|
PDF
|
STA6611
Abstract: No abstract text available
Text: STA6611 SamHop Microelectronics Corp. Nov. 22, 2006 Dual Enhancement Mode Field Effect Transistor N and P Channel (N-Channel) PRODUCT SUMMARY VDSS RDS(ON) ( m Ω ) ID Max VDSS ID -30V -6.6A RDS(ON) ( m Ω ) Max 35 @ VGS = -10V 23 @ VGS = 10V 30V (P-Channel)
|
Original
|
STA6611
STA6611
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Cascadable Amplifier 10 to 1000 MHz A66-3/ SMA66-3 V3 Features Product Image • HIGH GAIN - TWO STAGES: 26.0 dB TYP. • LOW NOISE: <3.0 dB (TYP.) • HIGH EFFICIENCY: 16 mA (TYP.) AT 5 VOLTS Description The A66-3 RF amplifier is a discrete hybrid design, which uses
|
Original
|
A66-3/
SMA66-3
A66-3
MIL-STD-883
SMA66-3
CA66-3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Cascadable Amplifier 10 to 1000 MHz A66-1/ SMA66-1 V3 Features • • • • Product Image HIGH GAIN - TWO STAGES: 27.5 dB TYP. LOW NOISE: <3.0 dB (TYP.) HIGH POWER OUTPUT: 15.0 dBm (TYP.) WIDE POWER SUPLLY RANGE: 5 TO 15 VOLTS Description The A66-1 RF amplifier is a discrete hybrid design, which uses
|
Original
|
A66-1/
SMA66-1
A66-1
MIL-STD-883
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Cascadable Amplifier 10 to 1200 MHz A66/ SMA66 V3 Features • • • • Product Image HIGH GAIN - TWO STAGES: 23.5 dB TYP. LOW NOISE: <3.8 dB (TYP.) HIGH OUTPUT LEVEL:+15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Description The A66 RF amplifier is a discrete hybrid design, which uses
|
Original
|
SMA66
MIL-STD-883
SMA66
|
PDF
|
TRANSISTOR A66
Abstract: CA66 SMA66
Text: A66 / SMA66 Cascadable Amplifier 10 to 1200 MHz Rev. V3 Features • • • • Product Image HIGH GAIN - TWO STAGES: 23.5 dB TYP. LOW NOISE: <3.8 dB (TYP.) HIGH OUTPUT LEVEL:+15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Description The A66 RF amplifier is a discrete hybrid design, which uses
|
Original
|
SMA66
MIL-STD-883
TRANSISTOR A66
CA66
SMA66
|
PDF
|
A66-3
Abstract: surface mount transistor A66 TRANSISTOR A66 CA66-3 SMA66-3 ca663
Text: A66-3 / SMA66-3 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features Product Image • HIGH GAIN - TWO STAGES: 26.0 dB TYP. • LOW NOISE: <3.0 dB (TYP.) • HIGH EFFICIENCY: 16 mA (TYP.) AT 5 VOLTS Description The A66-3 RF amplifier is a discrete hybrid design, which uses
|
Original
|
A66-3
SMA66-3
MIL-STD-883
A66-3
surface mount transistor A66
TRANSISTOR A66
CA66-3
SMA66-3
ca663
|
PDF
|
TRANSISTOR A66
Abstract: CA66-1 A66-1 SMA66-1 power suplly surface mount transistor A66 A661 TRANSISTOR CA66
Text: A66-1 / SMA66-1 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features • • • • Product Image HIGH GAIN - TWO STAGES: 27.5 dB TYP. LOW NOISE: <3.0 dB (TYP.) HIGH POWER OUTPUT: 15.0 dBm (TYP.) WIDE POWER SUPLLY RANGE: 5 TO 15 VOLTS Description The A66-1 RF amplifier is a discrete hybrid design, which uses
|
Original
|
A66-1
SMA66-1
MIL-STD-883
TRANSISTOR A66
CA66-1
SMA66-1
power suplly
surface mount transistor A66
A661 TRANSISTOR
CA66
|
PDF
|
A66-3
Abstract: CA66-3 SMA66-3
Text: A66-3/SMA66-3 10 TO 1000 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 26.0 dB TYP. · LOW NOISE: <3.0 dB (TYP.) · HIGH EFFICIENCY: 16 mA (TYP.) AT 5 VOLTS Typical Performance @ 25°C Specifications (Rev. Date: 6/01)* Characteristics Typical Frequency
|
Original
|
A66-3/SMA66-3
A66-3
SMA66-3
CA66-3
A66-3
CA66-3
SMA66-3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A66-3/SMA66-3 10 TO 1000 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 26.0 dB TYP. · LOW NOISE: <3.0 dB (TYP.) · HIGH EFFICIENCY: 16 mA (TYP.) AT 5 VOLTS Typical Performance @ 25°C Specifications (Rev. Date: 6/01)* Characteristics Typical Frequency
|
Original
|
A66-3/SMA66-3
A66-3
SMA66-3
CA66-3
|
PDF
|
A66-1
Abstract: CA66-1 SMA66-1
Text: A66-1/SMA66-1 10 TO 1000 MHz CASCADABLE AMPLIFIER • HIGH GAIN-TWO STAGES: 27.5 dB TYP. · LOW NOISE: <3.0 dB (TYP.) · HIGH POWER OUTPUT: 15.0 dBm (TYP.) · WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Typical Performance @ 25°C Specifications (Rev. Date: 1/01)*
|
Original
|
A66-1/SMA66-1
A66-1
SMA66-1
CA66-1
A66-1
CA66-1
SMA66-1
|
PDF
|
CA66
Abstract: SMA66
Text: A66/SMA66 10 TO 1200 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 23.5 dB TYP. · LOW NOISE: <3.8 dB (TYP.) · HIGH OUTPUT LEVEL: +15.0 dBm (TYP.) · WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Typical Performance @ 25°C Specifications (Rev. Date: 11/00)*
|
Original
|
A66/SMA66
SMA66
CA66
SMA66
|
PDF
|
CA66
Abstract: SMA66
Text: A66/SMA66 10 TO 1200 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 23.5 dB TYP. · LOW NOISE: <3.8 dB (TYP.) · HIGH OUTPUT LEVEL: +15.0 dBm (TYP.) · WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Typical Performance @ 25°C Specifications (Rev. Date: 1/02)*
|
Original
|
A66/SMA66
SMA66
CA66
SMA66
|
PDF
|
|
|
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
|
OCR Scan
|
AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
|
PDF
|
RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
|
OCR Scan
|
|
PDF
|
transistor A62
Abstract: 9709K darlington buffer array A634 DIP18 S0P16 BA12003 A6257 sink 8 low darlington array BA614
Text: lumm Transistor array Number Output Max.vdtage Output current mA of CHS (V) BA612 5 BA6256 B A664 6 BA13001F hput/output type Input active Output current Circuit level construction type Package Feature 24 450 25 Invert H Sink Darlington DIP14 24 100 25 Invert
|
OCR Scan
|
BA612
BA614
BA6256
BA13001F
BA13002F
BA12001
BA12002
BA12003
BA12004
BA618
transistor A62
9709K
darlington buffer array
A634
DIP18
S0P16
A6257
sink 8 low darlington array
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GaAßAs IRED & PHOTO-IC TLP2530,2531 DEGITAL LOGIC ISOLATION. Unit in mm LINE RECEIVER. POWER SUPPLY CONTROL. SWITCHING POWER SUPPLY. TRANSISTOR INVERTER. 1 The TOSHIBA TLP2530 and TLP2531 dual photocouplers 4 7.62 ±Q25 a66±Q25 consist of a pair of GaA£As light emitting diode and
|
OCR Scan
|
TLP2530
TLP2531
2500Vrms
|
PDF
|
MPS-A65
Abstract: mpsa65 MPS-A66
Text: Silicon S is iS Darlington Transistor M P S -A 6 5 M PS-A 66 The General Electric MPS-A65, A66 are Silicon Planar Epi taxial Passivated PNP Darlington Transistors designed for pre amplifier input applications where high impedance is a requirement. a b s o lu te m a x im u m ra tin g s : TA = 2 5 °c unless otherwise specified
|
OCR Scan
|
MPS-A65
MPS-A66
MPS-A65,
MPS-A65
mpsa65
MPS-A66
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY 131,072 W ORDS X 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The 7C518129A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizing one transistor dynamic memory cel! with CMOS
|
OCR Scan
|
7C518129A-LV
TC518129A-LV
-12LV
TC518129AFWL-80LV
TC518129AFWL-10LV
TC518129AFWL-12LV
TC518129APL/AFL/AFWLâ
-10LV,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 4 ÔE L06IC/NEH0RY •=10=17240 D G S 5 D 7 S D ■lit! 131,072 WORDS x 8 BIT CMOS PSEUDO STATIC RAM PRELIMINARY DESCRIPTION The TC518129A-LV Fam ily is a 1M bit high speed CMOS Pseudo Static RAM organized a s 131,072 w ords b y 8 bits. The TC518129A-LV fam ily utilizing one transistor dynamic m em ory cell w ith CMOS
|
OCR Scan
|
L06IC/NEH0RY
TC518129A-LV
TC518129APL/AFL/AFWLâ
-10LV,
-12LV
TC518129AFTL/ATRLâ
|
PDF
|
ATIC 164 D2
Abstract: WJ-A66 WJ-CA66
Text: uuU A66-3 / SMA66-3 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 26.0 dB TYP. LOW NOISE: <3.0 dB (TYP.) HIGH EFFICIENCY: 16 mA (TYP.) AT 5 VOLTS Outline Drawings Specifications* Characteristics
|
OCR Scan
|
A66-3
SMA66-3
A66-3
1-800-WJ1
ATIC 164 D2
WJ-A66
WJ-CA66
|
PDF
|
WJ-A66
Abstract: WJA66
Text: WJ-A66-3 / SMA66-3 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 26.0 dB TYP. LOW NOISE: < 3.0 dB (TYP.) HIGH EFFICIENCY: 16 mA (TYP.) AT 5 VOLTS Outline Drawings Specifications* Characteristics
|
OCR Scan
|
WJ-A66-3
SMA66-3
60-ohm
WJ-CA66-3
WJ-A66
WJA66
|
PDF
|
Wja66
Abstract: No abstract text available
Text: uud A66-1 / SMA66-1 10 to 1000 MHz TO-8 GASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 27.5 dB TYP. LOW NOISE: <3.0 dB (TYP.) HIGH POWER OUTPUT: 15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Outline Drawings
|
OCR Scan
|
A66-1
SMA66-1
A66-1
1-800-WJ1-4401
Wja66
|
PDF
|
