Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR A817A Search Results

    TRANSISTOR A817A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A817A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A817A transistor

    Abstract: a817a 2SA817A transistor a817a A817 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC1627A
    Text: 2SA817A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA817A Driver-Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SC1627A. • Driver stage application of 30 to 35 watts amplifiers. Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SA817A 2SC1627A. O-92MOD A817A transistor a817a 2SA817A transistor a817a A817 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC1627A

    A817A transistor

    Abstract: a817a 2SA817A 2SC1627A 2SA817A transistor
    Text: 2SA817A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA817A Driver-Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SC1627A. • Driver stage application of 30 to 35 watts amplifiers. Absolute Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SA817A 2SC1627A. O-92MOD A817A transistor a817a 2SA817A 2SC1627A 2SA817A transistor

    A817A transistor

    Abstract: a817a A817 2SA817A 2SC1627A 2SA817A transistor
    Text: 2SA817A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA817A Driver-Stage Amplifier Applications Voltage Amplifier Applications • Complementary to 2SC1627A. • Driver stage application of 30 to 35 watts amplifiers. Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SA817A 2SC1627A. O-92MOD A817A transistor a817a A817 2SA817A 2SC1627A 2SA817A transistor

    A817A transistor

    Abstract: A817A transistor a817a
    Text: 2SA817A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA817A Driver-Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SC1627A. • Driver stage application of 30 to 35 watts amplifiers. Absolute Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SA817A 2SC1627A. O-92MOD A817A transistor A817A transistor a817a