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    TRANSISTOR A82 Search Results

    TRANSISTOR A82 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A82 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: A82-1/SMA82-1 20 TO 250 MHz CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: >34 dB TYP. · HIGH OUTPUT POWER: +15 dBm (TYP.) · HIGH GAIN: 19.0 dB (TYP.) · LOW OUTPUT VSWR: 1.1:1 (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics


    Original     		PDF A82-1/SMA82-1 50-ohm

    STELLEX

    Abstract: transistor A82
    Text: A82/SMA82 20 TO 250 MHz CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: >28.5 dB TYP. · HIGH LEVEL OUTPUT: +20 dBm (TYP.) · LOW NOISE: 2.8 dB (TYP.) · high gain: 24.5 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics


    Original     		PDF A82/SMA82 50-ohm STELLEX transistor A82

    transistor A82

    Abstract: A82 transistor CA82 SMA82
    Text: A82/SMA82 20 TO 250 MHz CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: >28.5 dB TYP. · HIGH LEVEL OUTPUT: +20 dBm (TYP.) · LOW NOISE: 2.8 dB (TYP.) · high gain: 24.5 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics


    Original     		PDF A82/SMA82 SMA82 transistor A82 A82 transistor CA82 SMA82

    transistor A82

    Abstract: A82 transistor
    Text: A82-1/SMA82-1 20 TO 250 MHz CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: >34 dB TYP. · HIGH OUTPUT POWER: +15 dBm (TYP.) · HIGH GAIN: 19.0 dB (TYP.) · LOW OUTPUT VSWR: 1.1:1 (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics


    Original     		PDF A82-1/SMA82-1 A82-1 SMA82-1 CA82-1 transistor A82 A82 transistor

    transistor A82

    Abstract: No abstract text available
    Text: A82/SMA82 20 TO 250 MHz CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: >28.5 dB TYP. · HIGH LEVEL OUTPUT: +20 dBm (TYP.) · LOW NOISE: 2.8 dB (TYP.) · HIGH GAIN: 24.5 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 6/02)* Characteristics


    Original     		PDF A82/SMA82 SMA82 transistor A82

    transistor A82

    Abstract: No abstract text available
    Text: Cascadable Amplifier 20 to 250 MHz A82-1/ SMA82-1 V3 Features • • • • Product Image HIGH REVERSE ISOLATION: >34 dB TYP. HIGH OUTPUT POWER: +15 dBm (TYP.) HIGH GAIN: 19.0 dB (TYP.) LOW OUTPUT VSWR: 1.1:1 (TYP.) Description The A82-1 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF A82-1/ SMA82-1 A82-1 MIL-STD-883 transistor A82

    transistor A82

    Abstract: No abstract text available
    Text: Cascadable Amplifier 20 to 250 MHz A82/ SMA82 V3 Features • • • • Product Image HIGH REVERSE ISOLATION: >28.5 dB TYP. HIGH LEVEL OUTPUT: +20 dBm (TYP.) LOW NOISE: 2.8 dB (TYP.) HIGH GAIN: 24.5 dB (TYP.) Description The A82 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF SMA82 MIL-STD-883 transistor A82

    transistor A82

    Abstract: SMA82 CA82
    Text: A82 / SMA82 Cascadable Amplifier 20 to 250 MHz Rev. V3 Features • • • • Product Image HIGH REVERSE ISOLATION: >28.5 dB TYP. HIGH LEVEL OUTPUT: +20 dBm (TYP.) LOW NOISE: 2.8 dB (TYP.) HIGH GAIN: 24.5 dB (TYP.) Description The A82 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF SMA82 MIL-STD-883 transistor A82 SMA82 CA82

    transistor A82

    Abstract: A82-1 CA82-1 SMA82-1 sma82
    Text: A82-1 / SMA82-1 Cascadable Amplifier 20 to 250 MHz Rev. V3 Features • • • • Product Image HIGH REVERSE ISOLATION: >34 dB TYP. HIGH OUTPUT POWER: +15 dBm (TYP.) HIGH GAIN: 19.0 dB (TYP.) LOW OUTPUT VSWR: 1.1:1 (TYP.) Description The A82-1 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF A82-1 SMA82-1 MIL-STD-883 transistor A82 CA82-1 SMA82-1 sma82

    CPM2B

    Abstract: CPM1-CIF01 RS-232C Adapter CBL-202 CQM1H-CIF12 CPM1-CIF01 PIN OUT C200HS-CN220-EU OMRON Cbl-804 pin out c200h-cn229-eu OMRON Cbl-804 omron plc txd example program
    Text: Micro Controller Board CPM2B The CPM2B series programmable controllers offer the powerful features and advanced technology of Omron’s brick style micros in a board package. These controllers give you advantages in programming flexibility, reduced development cost and significant space


    Original     		PDF 32-point 40-point R301-E3-01 CPM2B CPM1-CIF01 RS-232C Adapter CBL-202 CQM1H-CIF12 CPM1-CIF01 PIN OUT C200HS-CN220-EU OMRON Cbl-804 pin out c200h-cn229-eu OMRON Cbl-804 omron plc txd example program

    CBL-202

    Abstract: OMRON Cbl-804 OMRON Cbl-804 pin out CPM1-CIF01 PIN OUT CBL-804 OMRON Cpm2b CQM1H-CIF12 PLC to pc Communication cables pin diagram omron AR2315 CPM2B-32EDT
    Text: Micro Controller Board CPM2B The CPM2B series programmable controllers offer the powerful features and advanced technology of Omron’s brick style micros in a board package. These controllers give you advantages in programming flexibility, reduced development cost and significant space


    Original     		PDF 32-point 40-point R301-E3-01 653-3G2A9-BAT08 3G2A9-BAT08 CBL-202 OMRON Cbl-804 OMRON Cbl-804 pin out CPM1-CIF01 PIN OUT CBL-804 OMRON Cpm2b CQM1H-CIF12 PLC to pc Communication cables pin diagram omron AR2315 CPM2B-32EDT

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 131,072 W ORDS X 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The 7C518129A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizing one transistor dynamic memory cel! with CMOS


    OCR Scan     		PDF 7C518129A-LV TC518129A-LV -12LV TC518129AFWL-80LV TC518129AFWL-10LV TC518129AFWL-12LV TC518129APL/AFL/AFWLâ -10LV,

    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


    OCR Scan     		PDF AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700

    TC518129AF-10

    Abstract: No abstract text available
    Text: 131,072 WORDS x 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518129A-LV Family is a 1M bit high-speed CMOS Pseudo-Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizes one transistor dynamic memory cell array with CMOS peripheral circuitry to achieve large capacity, high speed accesses, and low


    OCR Scan     		PDF TC518129A-LV TC518129APL/AFL-80LV TC518129APL/AFL-1OLV TC518129APL/AFL-12LV DIP32 TC518129APL TC518129AF-10

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 4 ÔE L06IC/NEH0RY •=10=17240 D G S 5 D 7 S D ■lit! 131,072 WORDS x 8 BIT CMOS PSEUDO STATIC RAM PRELIMINARY DESCRIPTION The TC518129A-LV Fam ily is a 1M bit high speed CMOS Pseudo Static RAM organized a s 131,072 w ords b y 8 bits. The TC518129A-LV fam ily utilizing one transistor dynamic m em ory cell w ith CMOS


    OCR Scan     		PDF L06IC/NEH0RY TC518129A-LV TC518129APL/AFL/AFWLâ -10LV, -12LV TC518129AFTL/ATRLâ

    50-5G regulator

    Abstract: 50-5g VOLTAGE REGULATOR inductive proximity detector ic
    Text: SIEMENS IC for Inductive Proximity Switches TCA 505 with Shortcircuit Protection Prelim inary data Type O rdering code Package TCA 505 A Q67000-A8278 P-DIP-16 TCA 505 G Q67000-A8279 P-DSO-16 TCA 505 is a bipolar m onolithic IC w ith w hich excellent inductive proximity switches can be designed at


    OCR Scan     		PDF Q67000-A8278 P-DIP-16 Q67000-A8279 P-DSO-16 50-5G regulator 50-5g VOLTAGE REGULATOR inductive proximity detector ic

    WJ-A82-1

    Abstract: No abstract text available
    Text: WJ-A82-1 / SMA82-1 20 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: > 34 dB TYP. HIGH OUTPUT POWER: +15.5 dBm (TYP.) HIGH GAIN: 18dB (TYP) LOW OUTPUT VSWR : 1.1:1 (TYP.) Outline Drawings A82-1


    OCR Scan     		PDF WJ-A82-1 SMA82-1 A82-1 00071ht

    WJA8

    Abstract: WJ-A82
    Text: u u U A82 / SMA82 20 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: > 28.5 dB TYR HIGH LEVEL OUTPUT: +20 dBm (TYR) LOW NOISE: 2.8 dB (TYR) HIGH GAIN: 24.5 dB (TYR) «I n Outline Drawings Specifications*


    OCR Scan     		PDF SMA82 50-ohm WJ-CA82 WJ-A82 1-800-WJ1-4401 WJA8

    Untitled

    Abstract: No abstract text available
    Text: WJ-A82 / SMA82 20 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: > 28.5 dB TYP. HIGH LEVEL OUTPUT: +20 dBm (TYP.) HIGH GAIN: 22.5 dB (TYP.) Outline Drawings Specifications’1 A82 Typical Characteristics


    OCR Scan     		PDF WJ-A82 SMA82 50-ohm

    Transistor BC 457

    Abstract: WJ-A82-1 WJ-A82 bc 457 Transistor bc 149 transistor transistor 9822 WJA82 WJ-CA82
    Text: uuU A82-1 /SMA82-1 20 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: > 34 dB TYP. HIGH OUTPUT POWER: +15 dBm (TYP.) HIGH GAIN: 19.0 dB (TYP) LOW OUTPUT VSWR : 1.1:1 (TYP.) O utline D raw ings A82-1


    OCR Scan     		PDF A82-1 /SMA82-1 A82-1 50-QHM J1-4401 Transistor BC 457 WJ-A82-1 WJ-A82 bc 457 Transistor bc 149 transistor transistor 9822 WJA82 WJ-CA82

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    ABZH

    Abstract: ABZK B874
    Text: 19-1257; Rev 0: 7/97 y u x x iv M Low-Dropout, 120mA L in ear R egulators The devices feature Dual Mode operation: their out­ put voltage is preset at 3.15V for the T versions, 2.84V for the S versions, or 2.80V for the R versions or can be adjusted with an external resistor divider. Total error on


    OCR Scan     		PDF 120mA MAX8873T/S/R MAX8874T/S/R 120mA. MAX8873/MAX8874 MAX8877/MAX8878. ABZH ABZK B874