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    TRANSISTOR A928A Search Results

    TRANSISTOR A928A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A928A Datasheets Context Search

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    A928A

    Abstract: transistor A928A QW-R202-003 A928A TRANSISTOR
    Text: UTC A928A PNP EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER FEATURES *Collector Dissipation Pc=1 Watt *3 Watt Output Application 1 TO-92L 1:EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified PARAMETER SYMBOL


    Original     		PDF A928A O-92L QW-R202-003 A928A transistor A928A A928A TRANSISTOR

    A928A

    Abstract: No abstract text available
    Text: UTC A928A PNP EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER FEATURES *Collector Dissipation Pc=1 Watt *3 Watt Output Application 1 TO-92L 1:EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified PARAMETER SYMBOL


    Original     		PDF A928A O-92L A928A