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    TRANSISTOR AC Search Results

    TRANSISTOR AC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR CE2F3P on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA


    Original     		PDF

    2SC4815

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE sat and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators.


    Original     		PDF 2SC4815 2SC4815

    2SC4813

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4813 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4813 is a power transistor developed for high-speed switching and features high hFE and low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.


    Original     		PDF 2SC4813 2SC4813

    2SA1845

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1845 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1845 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.


    Original     		PDF 2SA1845 2SA1845

    2SA1847

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1847 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1847 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.


    Original     		PDF 2SA1847 2SA1847

    tip122 tip127 audio board

    Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
    Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents


    Original     		PDF Power247TM, tip122 tip127 audio board BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920

    2SA1843

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1843 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1843 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.


    Original     		PDF 2SA1843 2SA1843

    MMBT2907A

    Abstract: Application of MMBT2907A MMBT2907 MMBT2907 ON MMBT2222 MMBT2222A
    Text: MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended.


    Original     		PDF MMBT2907 MMBT2907A MMBT2222 MMBT2222A OT-23 MMBT2907A Application of MMBT2907A MMBT2907 ON

    MMBT2907

    Abstract: MMBT2222 MMBT2222A MMBT2907A
    Text: MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended.


    Original     		PDF MMBT2907 MMBT2907A MMBT2222 MMBT2222A OT-23 MMBT2907 MMBT2907A

    MMBT2907

    Abstract: MMBT2907A MMBT2907 ON MMBT2222 MMBT2222A
    Text: MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended.


    Original     		PDF MMBT2907 MMBT2907A MMBT2222 MMBT2222A OT-23 MMBT2907 150mA, 500mA, 100MHz MMBT2907A MMBT2907 ON

    MMBT2222ATL1

    Abstract: MMBT2907ATL1 MMBT2907ALT1 MMBT2222LT1 MMBT2907LT1 hFE is transistor MMBT2907LT
    Text: MMBT2907LT1 / MMBT2907ALT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222LT1 and MMBT2222ATL1 are recommended.


    Original     		PDF MMBT2907LT1 MMBT2907ALT1 MMBT2222LT1 MMBT2222ATL1 OT-23 MMBT2907ATL1 150mA, 500mA, 100MHz MMBT2907ATL1 MMBT2907ALT1 hFE is transistor MMBT2907LT

    MMBT2222ATL1

    Abstract: MMBT2907ALT1 MMBT2222LT1 MMBT2907ATL1 MMBT2907LT1
    Text: MMBT2907LT1 / MMBT2907ALT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222LT1 and MMBT2222ATL1 are recommended.


    Original     		PDF MMBT2907LT1 MMBT2907ALT1 MMBT2222LT1 MMBT2222ATL1 OT-23 MMBT2907ATL1 150mA, 500mA, 100MHz MMBT2907ALT1 MMBT2907ATL1

    MMBTSA1015

    Abstract: No abstract text available
    Text: MMBTSA1015LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815LT1 is recommended.


    Original     		PDF MMBTSA1015LT1 MMBTSC1815LT1 OT-23 150mA 100mA, 100Hz, MMBTSA1015

    MMBTSA1015

    Abstract: No abstract text available
    Text: MMBTSA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815 is recommended.


    Original     		PDF MMBTSA1015 MMBTSC1815 OT-23 150mA 100mA, 100Hz, MMBTSA1015

    hFE-200 transistor PNP

    Abstract: No abstract text available
    Text: MMBTSA1162 PNP Silicon Epitaxial Planar Transistor for AF general purpose amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC2712 is recommended.


    Original     		PDF MMBTSA1162 MMBTSC2712 OT-23 100mA, 100Hz, hFE-200 transistor PNP

    Untitled

    Abstract: No abstract text available
    Text: MMBTSA1162 PNP Silicon Epitaxial Planar Transistor for AF general purpose amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC2712 is recommended.


    Original     		PDF MMBTSA1162 MMBTSC2712 OT-23 100mA, 100Hz,

    Untitled

    Abstract: No abstract text available
    Text: MMBTSA1015LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815LT1 is recommended.


    Original     		PDF MMBTSA1015LT1 MMBTSC1815LT1 OT-23 150mA 100mA, 100Hz,

    Untitled

    Abstract: No abstract text available
    Text: MMBTSA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815 is recommended.


    Original     		PDF MMBTSA1015 MMBTSC1815 OT-23 150mA 100mA, 100Hz,

    Untitled

    Abstract: No abstract text available
    Text: MMBTSC1815LT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015LT1 is recommended.


    Original     		PDF MMBTSC1815LT1 MMBTSA1015LT1 OT-23 150mA 100mA,

    2sa1048 transistor

    Abstract: transistor 2sa1048 hFE-200 transistor PNP 2sc2458 equivalent 2SA1048 2SC2458 2SA104
    Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.


    Original     		PDF 2SA1048 2SC2458 100mA, 2sa1048 transistor transistor 2sa1048 hFE-200 transistor PNP 2sc2458 equivalent 2SA1048 2SA104

    2sa1048 transistor

    Abstract: 2SA1048 2sc2458 equivalent 2SC2458
    Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.


    Original     		PDF 2SA1048 2SC2458 100mA, 2sa1048 transistor 2SA1048 2sc2458 equivalent

    2SC5170

    Abstract: LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5170 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5170 is a silicon NPN epitaxial type transistor. It is designed for


    OCR Scan     		PDF 2SC5170 2SC5170 100Hz) 110mVtyp X10-3 LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR

    2sa1929

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1929 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Mitsubishi 2SA1929 is a silicon PNP epitaxial type transistor. It is designed for


    OCR Scan     		PDF 2SA1929 2SA1929 -100V 300mA, 100Hz) 110mV 270Hz X10-3