la 7518
Abstract: TFK 450 BCW60C BCW60D BCW60
Text: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen
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BCW60C
BCW60D
200Hz
la 7518
TFK 450
BCW60
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LM114
Abstract: LM114D Monolithic Transistor Pair LM114A LM114AH LM114H alc100
Text: ïïM M m \ll LM114IH, LM114A/AH Dual NPN Monolithic Transistor GENERAL DESCRIPTION FEATURES These devices contain a pair of junction-isolated NPN transis tors fabricated on a single silicon substrate. This m onolithic structure makes possible extrem ely tig ht parameter matching
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LM114/H,
LM114A/AH
300MHz
22MHz
10/iA
l-125
LM114
LM114A,
LM114D
Monolithic Transistor Pair
LM114A
LM114AH
LM114H
alc100
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Untitled
Abstract: No abstract text available
Text: 2SB1197K Transistor, PNP Features Dimensions Units : mm • available In SMT3 (SMT, SC-59) package • package marking: 2SB1197K; AH-*, where ★ is hFE code • 2SB1197K (SMT3) 1.9±0.2 low collector saturation voltage 0.96 a (2 )[ 2.4 V CE(sat) - “ ° - 5 v f o r
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2SB1197K
SC-59)
2SB1197K;
A/-50
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Untitled
Abstract: No abstract text available
Text: na. TELEPHONE: 979 378*2922 (212) 227-8008 FAX: (973) 3784880 20 STERN AVE. SPfllNQRELD, NEW JERSEY 07081 U.SA 2N4997 N-P-N SILICON TRANSISTOR *AU JEDEC TO-92 DIMENSIONS AND NOTES ARE APPLICABLE AH pIMENilONi IN INCHII —MK- 0.010 (NOT! A) .• N —H o'«> + A^—i r~H_
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2N4997
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ITCH725D
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTOJ- 9097250 TOSHIBA ^aHììln CDI S C R E T E / O P T O “H DeTJ B O T O S O 990 16647 D 0 1 L t 47 b DT-3Ì-I3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 3 5 5 SILICON N CHANNEL MOS TYPE <7T-MOS ) TECHNICAL DATA INDUSTRIAL APPLICATIONS
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71-MOS
100nA
ITCH725D
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transistor Cd 18 p
Abstract: ic MARKING FZ 2SA1759 7028 TRANSISTOR marking 7T transistor
Text: 2SA1759 Transistor, PNP Features D im ensions Units : mm • av a ila b le in M P T 3 (M PT, S C -6 2 ) p a cka g e • p a c k a g e m arking: 2 S A 1 7 5 9 ; AH-*, w h ere ★ is hFE co d e • high breakdow n voltage, 2SA1759 (MPT3) V ceo = “ 400 V
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2SA1759
SC-62
transistor Cd 18 p
ic MARKING FZ
2SA1759
7028 TRANSISTOR
marking 7T transistor
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2n7000 equivalent
Abstract: transistor 2n7000 field effect transistor 2n7000 N-Channel Enhancement Mode Field Effect Transistor Transistor AH 10 equivalent of 2n7000 TRANSISTOR AH TRANSISTOR2N7000
Text: N-Channel Enhancement Mode Field Effect Transistor 2N7000 N-Channel Enhancement Mode Field Effect Transistor Features • • • • • High density cell design for low RDS ON Voltage controlled small signal switch Rugged and reliable High saturation current capability
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2N7000
MIL-STD-202G,
2N7000
2n7000 equivalent
transistor 2n7000
field effect transistor
N-Channel Enhancement Mode Field Effect Transistor
Transistor AH 10
equivalent of 2n7000
TRANSISTOR AH
TRANSISTOR2N7000
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08-Oct-97
Abstract: No abstract text available
Text: Temic BUF7216 Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature
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BUF7216
D-74025
08-Oct-97
08-Oct-97
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC KSB596 IME D | 7^4142 0007502 4 PNP EXITAXIAL SILICON TRANSISTOR — “ T - 3 3 - ^ ;- POWER AMPLIFIER APPLICATIONS • Complément to KSD526 10-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Co/lector-Base Voltage
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KSB596
KSD526
GQG77fe
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MEL12
Abstract: MAL100 MEL31 MEL32 mel32 photo transistor CL138 MEL11 FPT100B FPT100 FPT100A
Text: TYPE NO. CL138 POLARITY Photo Transistor P d mW 1 C (mA) V CEO (V) MIN MAX N* 300 100 18 15 MAXIMUM RATINGS 1 I L (rrw CASE D (nA) max V CE (V) PACKAGE H (mW/cm2) V CE (V) 80 2 3 1000 5 TO-106 1-49 5 5 5 5 5 5 100 100 100 5 5 5 TO-106 1-49 NO. FPT100 FPT100A
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CL138
O-106
FPT100
FPT100A
FPT100B
FPT110
FPT110A
O-106F
FPT110B
MEL12
MAL100
MEL31
MEL32
mel32 photo transistor
MEL11
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transistor equivalent of 2N5401
Abstract: No abstract text available
Text: S A MS UN G SE MICONDU CTOR INC MPSL51 ! 1 4E D | 7*^4142 00073^2 1 | PNP EPITAXIAL SILICON TRANSISTOR “ ‘ " T-29-21 AMPLIFIER TRANSISTOR • Collector-Em ltter Voltage: Vceo=100V • C ollector D issipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
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MPSL51
T-29-21
625mW
2N5401
transistor equivalent of 2N5401
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JE2955T
Abstract: JE2955
Text: SAMSUNG SEMICONDUCTOR IME O I INC MJE2955T 7*11,4142 G0077Gfl 5 | PNP SILICON TRANSISTOR T- GENERAL PURPOSE A n 6 SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES 2 • High Current Galn-Bandwldth Product fT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )
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MJE2955T
G0077Gfl
GQG77fe
JE2955T
JE2955
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transistor SMD n 03a
Abstract: No abstract text available
Text: Temic BUD600 Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate • Very low switching losses Very low dynamic saturation Very low operating temperature
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BUD600
BUD600
D-74025
18-Jul-97
transistor SMD n 03a
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1b.1 smd transistor
Abstract: transistor SMD n 03a 1B1 SMD 1B2 SMD smd TRANSISTOR AH transistor 1B2 SMD SMD Transistor 1B2
Text: Temic Som ii « h BUD616A d i h t i r s Silicon NPN High Voltage Switching Transistor Features • • • • • Simple-sWitch-Off Transistor (SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses • • • •
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BUD616A
BUD616A
D-74025
18-Jul-97
1b.1 smd transistor
transistor SMD n 03a
1B1 SMD
1B2 SMD
smd TRANSISTOR AH
transistor 1B2 SMD
SMD Transistor 1B2
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors BCX53 SOT-89 TRANSISTOR PNP FEATURES Power dissipation PCM: 0.5 Collector current ICM: -1 Collector-base voltage V(BR)CBO: -100 1. BASE 2. COLLECTOR W (Tamb=25℃)
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OT-89
BCX53
OT-89
150mA
-500mA
BCX53-10
BCX53-16
BCX53
BCX53-10
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4n27 opto isolator
Abstract: 4N2S 4n26 opto isolator opto 4n25 4N25 transistor C 547 c 340 opto isolator ic 4n26 opto isolator 4n26 4N26
Text: 1-22 Coupled Characteristics Max Ratings @ T^ = 25°C Output Pd mW Transistor •c v CEO mA V 4N25<4> Trans 250 — 4N26<4> Trans 250 — Device No. Diode Min Current Transfer Ratio Ic / I f @*f @V c e % mA V Vr V |= mA v lSO kV 3.0 80 2.5 20 10 10 30 3.0
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4N27W
4n27 opto isolator
4N2S
4n26 opto isolator
opto 4n25
4N25
transistor C 547 c
340 opto isolator
ic 4n26
opto isolator 4n26
4N26
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Untitled
Abstract: No abstract text available
Text: w an A M P com pany Radar Pulsed Power Transistor, 100W, 2ms Pulse, 20% Duty 1.2 -1.4 GHz PH1214-100EL V2.01 Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d Class C O p eratio n
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PH1214-100EL
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Untitled
Abstract: No abstract text available
Text: Transistor B minil^eel NPN H atin g s mlnlBefif Bui* 500 pcs T yp e N PN G en eral P urpo se 73-2369 MMBT2369 73-8181 BC818-16 73-8182 BC818 25 73-8183 BC818 40 100 pcs 53-2369 53-8181 53-8182 53-8183 VCEO V Ic mA hFE M in-M ax @ lc VCE 15V 500mA 10mA@1V 25V
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MMBT2369
BC818-16
BC818
500mA
100mA
100MHz
BC846A
BC848B
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BUD620
Abstract: E2 p SMD Transistor
Text: Temic BUD620 S e m i c o n d u c t o r s Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT Very low dynamic saturation HIGH SPEED technology Very low operating temperature Planar passivation Optimized RBSOA 100 kHz switching rate
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BUD620
BUD620
D-74025
18-Jul-97
E2 p SMD Transistor
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AL SOT-89
Abstract: BCX53-16 BCX53-16-AL BCX53 BCX53-10
Text: BCX53 PNP Plastic-Encapsulate Transistor P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 MAXIMUM RATINGS ( TA=25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage
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BCX53
OT-89
BCX53
BCX53-10
BCX53-16
-50mA
-500mA
-150mA
BCX53-10
AL SOT-89
BCX53-16-AL
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Untitled
Abstract: No abstract text available
Text: EPSON PF400-07 SCI7630M/C Series Switching Regulator I DESCRIPTION •Step-up Switching Regulator 1.5V 2.0, 2.2, 2.35, 2.4, 2.7, 2.8, 3.0, 3.1, 3.5, 3.7, 4.2 ,5.0V •L o w Operating Voltage(Min 0.9V) •Voltage Detecting function, Battery Back-up function
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PF400-07
SCI7630M/C
SCI7363/7632/7635/7636/7639M/C)
SCI7630M
SCI7630M/C
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VARTA 4020
Abstract: Varta Industrial D LR20 ALKALINE LR20 VARTA 4020 LR20 alkaline varta Batteries Varta 1,5 V Energy TRANSISTOR AH Transistor AH 10 LR20 7D transistor varta lr20
Text: VARTA Industrial Data Sheet 4020 Recommended Application: Universal Type Designation Designation IEC System 4020 LR20 Zn-MnO2 Alkaline Shelf Life (Coding)* 5 years Nominal Voltage [V] Typical Capacity C [mAh] Permissible Temperature Range 1.5 16500 (discharge with high-resistance)
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2SK34
Abstract: Silicon N Chanel high speed power switching SK34 DIODE
Text: SEP 25*00 06:01 »CCT-FAX* HHo:05250258 <Norial iiessage> From:67361 10:33745 [Alt.] P0Q6/017 0UT:0001 TKY0808-T T O S H I B A _ 2SK3437 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt - M O S V 2 SK34 3 7 HIGH SPEED,HIGH VOLTAGE SWITCHING APPLICATIONS
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P0Q6/017
TKY0808-T
2SK3437
2SK34
Silicon N Chanel high speed power switching
SK34 DIODE
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Untitled
Abstract: No abstract text available
Text: tPioducki, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N997 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 N-P-N PLANAR SILICON TRANSISTOR TWO TRIODES INTERNALLY CONNECTED IN DARLINGTON CONFIGURATION VERY HIGH GRAIN - 100MIN AT 100UA
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2N997
100MIN
100UA
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