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    TRANSISTOR AH 16 Search Results

    TRANSISTOR AH 16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AH 16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VARTA 4020

    Abstract: Varta Industrial D LR20 ALKALINE LR20 VARTA 4020 LR20 alkaline varta Batteries Varta 1,5 V Energy TRANSISTOR AH Transistor AH 10 LR20 7D transistor varta lr20
    Text: VARTA Industrial Data Sheet 4020 Recommended Application: Universal Type Designation Designation IEC System 4020 LR20 Zn-MnO2 Alkaline Shelf Life (Coding)* 5 years Nominal Voltage [V] Typical Capacity C [mAh] Permissible Temperature Range 1.5 16500 (discharge with high-resistance)


    Original     		PDF

    AH TRANSISTOR

    Abstract: 7D transistor TRANSISTOR Ah LR20 Transistor AH 10 alkaline varta LR20D varta lr20
    Text: LR 20 / D Data Sheet power one Primary Alkaline Manganese Clindrical Type Number Designation IEC System 4120 LR20 Zn-MnO2 Alkaline Shelf Life (Coding)* Nominal Voltage [V] Typical Capacity C [mAh] Permissible Temperature Range 5 years 1.5 16500 (discharge with high-resistance)


    Original     		PDF D-73479 AH TRANSISTOR 7D transistor TRANSISTOR Ah LR20 Transistor AH 10 alkaline varta LR20D varta lr20

    NPN SMALL SIGNAL TRANSISTOR

    Abstract: transistor 2n5551 2N5551 transistor equivalent 2n5551 Transistor AH 10
    Text: Small Signal High Voltage Transistor NPN 2N5551 Small Signal High Voltage Transistor (NPN) Features • High Voltage NPN Transistor for General Purpose and Telephony Applications Mechanical Data Case: TO-92, Plastic Package Terminals: Weight: TO-92 Solderable per MIL-STD-202G, Method 208


    Original     		PDF 2N5551 MIL-STD-202G, NPN SMALL SIGNAL TRANSISTOR transistor 2n5551 2N5551 transistor equivalent 2n5551 Transistor AH 10

    Untitled

    Abstract: No abstract text available
    Text: SMALL SIGNAL HIGH VOLTAGE TRANSISTOR NPN 2N5551 Small Signal High Voltage Transistor (NPN) Features • High Voltage NPN Transistor for General Purpose and Telephony Applications Mechanical Data Case: TO-92, Plastic Package Terminals: Weight: TO-92 Solderable per MIL-STD-202G, Method 208


    Original     		PDF 2N5551 MIL-STD-202G,

    TRANSISTOR C 2026

    Abstract: 2SB817E 2SB817e equivalent AH TRANSISTOR transistor PNP how to test transistor transistor 1503 mexico transistor power 2sb817
    Text: Power Transistor PNP 2SB817E Power Transistor (PNP) Features • 2SB817E transistor is designed for use in general purpose power amplifier, application TO-3P Mechanical Data Case: TO-3P, Plastic Package Terminals: Weight: Plated leads solderable per MIL-STD-750, Method 2026


    Original     		PDF 2SB817E 2SB817E MIL-STD-750, TRANSISTOR C 2026 2SB817e equivalent AH TRANSISTOR transistor PNP how to test transistor transistor 1503 mexico transistor power 2sb817

    VARTA 4006

    Abstract: alkaline varta TRANSISTOR AH varta Transistor AH 10 LR6 varta varta alkaline alkaline varta 4006
    Text: 4006 VARTA Industrial Data Sheet Recommended Application: Universal Type Designation Designation IEC System 4006 LR6 Zn-MnO2 Alkaline Shelf Life (Coding)* 5 years Nominal Voltage [V] Typical Capacity C [mAh] Permissible Temperature Range 1.5 2600 (discharge with high-resistance)


    Original     		PDF 10S/M VARTA 4006 alkaline varta TRANSISTOR AH varta Transistor AH 10 LR6 varta varta alkaline alkaline varta 4006

    MB90246A

    Abstract: d29 transistor to-98 package
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-13505-5E 16-bit Proprietary Microcontroller CMOS F2MC-16F MB90246A Series MB90246A • DESCRIPTION The MB90246A series is a 16-bit microcontroller optimum to control mechatronics such as a hard disk drive unit. The instruction set of F2MC-16F CPU core inherits AT architecture of F2MC*-16/16H family with additional


    Original     		PDF DS07-13505-5E 16-bit F2MC-16F MB90246A MB90246A -16/16H 32-bit d29 transistor to-98 package

    MB90246A

    Abstract: d29 transistor to-98 package EASR1
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS07-13505-5E 16-bit Proprietary Microcontroller CMOS F2MC-16F MB90246A Series MB90246A • DESCRIPTION The MB90246A series is a 16-bit microcontroller optimum to control mechatronics such as a hard disk drive unit.


    Original     		PDF DS07-13505-5E 16-bit F2MC-16F MB90246A MB90246A -16/16H 32-bit d29 transistor to-98 package EASR1

    Untitled

    Abstract: No abstract text available
    Text: SEC / aH *0 E V IC E / SILICON TRANSISTOR _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _2 S C 1 6 2 2 A AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURE PACKAGE DIMENSIONS


    OCR Scan     		PDF 2SC1622A

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SD1950 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1950 is designed fo r general-purpose applications requiring High DC C urrent Gain. This is suitable fo r ah k in d o f d riv in g o r m uting. FEATURES •


    OCR Scan     		PDF 2SD1950 2SD1950

    la 7518

    Abstract: TFK 450 BCW60C BCW60D BCW60
    Text: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen


    OCR Scan     		PDF BCW60C BCW60D 200Hz la 7518 TFK 450 BCW60

    ITCH725D

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTOJ- 9097250 TOSHIBA ^aHììln CDI S C R E T E / O P T O “H DeTJ B O T O S O 990 16647 D 0 1 L t 47 b DT-3Ì-I3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 3 5 5 SILICON N CHANNEL MOS TYPE <7T-MOS ) TECHNICAL DATA INDUSTRIAL APPLICATIONS


    OCR Scan     		PDF 71-MOS 100nA ITCH725D

    Untitled

    Abstract: No abstract text available
    Text: M AT-01 MATCHED MONOLITHIC DUAL TRANSISTOR M o n o l it h F E A TU R ES A B S O L U T E M A X IM U M R A T IN G S Note 4 • Collector-Base Voltage (BVCbo ) MAT-01 AH, GH, N . 45V Collector-Emitter Voltage (BVc Eq )


    OCR Scan     		PDF AT-01 MAT-01 10ppm/6C MAT-01AH 100kn

    Untitled

    Abstract: No abstract text available
    Text: fS } M W S E M I C O N D U C T O R V ICL7663S A R R IS CMOS Programmable Micropower Positive Voltage Regulator GENERAL DESCRIPTION FEATURES The Harris ICL7663S Super Programmable Micropower Voltage Regulator is a low power, high efficiency positive voltage regulator which accepts 1,6V to 16V inputs and pro­


    OCR Scan     		PDF ICL7663S ICL7663SA) ICL7663S. ICM7233

    Untitled

    Abstract: No abstract text available
    Text: OCT 2 j a FMx 1408FRAM Memory r ^ 3 M 16,384-Bit Nonvolatile Ferroelectric RAM Engineering Evaluation U n ir T R O N Features • 16,384-Bit Nonvolatile Ferroelectric RAM Organized as 2,048w x 8b ■ CMOS Technology with Integrated Ferroelectric Storage Cells


    OCR Scan     		PDF 1408FRAMÂ 384-Bit 150ns 300ns 28-Pin)

    Ferroelectric RAM

    Abstract: "Ferroelectric RAM" mtron til 081 1408S ferroelectric
    Text: FM1408S FRAM Memory r^ M T R O IM 16,384-Bit Nonvolatile Ferroelectric RAM Product Preview Features • 16,384-Bit Nonvolatile Ferroelectric RAM Organized as 2Kw x 8b ■ CMOS Technology with Integrated Nonvolatile Ferroelectric Storage Cells ■ Fully Synchronous Symmetrical Operation


    OCR Scan     		PDF 1408S 384-Bit 150ns 300ns 10-Year 24-Pin 24-Pin) Ferroelectric RAM "Ferroelectric RAM" mtron til 081 ferroelectric

    Untitled

    Abstract: No abstract text available
    Text: HAR ü < '5,. FM 1408S FRAM Memory r^ M T R Ü N 16,384-Bit Nonvolatile Ferroelectric RAM Product Preview Features • 16,384-Bit Nonvolatile Ferroelectric RAM Organized as 2Kw x 8b ■ CMOS Technology with Integrated Nonvolatile Ferroelectric Storage Cells


    OCR Scan     		PDF 1408S 384-Bit 150ns 300ns 10-Year 24-Pin 24-Pin)

    Untitled

    Abstract: No abstract text available
    Text: Transistor B minil^eel NPN H atin g s mlnlBefif Bui* 500 pcs T yp e N PN G en eral P urpo se 73-2369 MMBT2369 73-8181 BC818-16 73-8182 BC818 25 73-8183 BC818 40 100 pcs 53-2369 53-8181 53-8182 53-8183 VCEO V Ic mA hFE M in-M ax @ lc VCE 15V 500mA 10mA@1V 25V


    OCR Scan     		PDF MMBT2369 BC818-16 BC818 500mA 100mA 100MHz BC846A BC848B

    Untitled

    Abstract: No abstract text available
    Text: EPSON PF400-07 SCI7630M/C Series Switching Regulator I DESCRIPTION •Step-up Switching Regulator 1.5V 2.0, 2.2, 2.35, 2.4, 2.7, 2.8, 3.0, 3.1, 3.5, 3.7, 4.2 ,5.0V •L o w Operating Voltage(Min 0.9V) •Voltage Detecting function, Battery Back-up function


    OCR Scan     		PDF PF400-07 SCI7630M/C SCI7363/7632/7635/7636/7639M/C) SCI7630M SCI7630M/C

    sxxxx

    Abstract: No abstract text available
    Text: æ H A « « H M - 6 5 2 2 /8 8 3 16K x 1 Asynchronous CMOS Static RAM January 1992 Features • 6 Pinouts This Circuit Is Processed In Accordance to Mtl-Std-883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. HM1-65262/883 CERAMIC DIP


    OCR Scan     		PDF HM1-65262/883 Mtl-Std-883 7CV85nsMax HM-65262/883 MIL-M38510 MIL-STD-1835, GDIP1-T20 L-M38510 sxxxx

    caa regulator

    Abstract: SCI7630M SC17631 SC17631-MBA
    Text: PF400-07 EPSON SCI7630M/C Series Switching Regulator I DESCRIPTION •Step-up Switching Regulator 1.5V 2.0, 2.2, 2.35, 2.4, 2.7, 2.8, 3.0, 3.1, 3.5, 3.7, 4.2 ,5.0V •L o w Operating Voltage(Min 0.9V) •Voltage Detecting function, Battery Back-up function


    OCR Scan     		PDF PF400-07 SCI7630M/C SCI7363/7632/7635/7636/7639M/C) SCI7630M/ 32kHz, SCI7631 SCI7633M/CBa, SCI7635M/CBa caa regulator SCI7630M SC17631 SC17631-MBA

    marking code sot-23 697

    Abstract: marking code sot23 697
    Text: SIEMENS BCR 169 PNP S ilicon D igital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1 = 4.7kiî F L nr W Type Marking Ordering Code Pin C onfiguration BCR 169 WSs 1=B Q62702-C2340 Package 2=E 3=C SOT-23


    OCR Scan     		PDF Q62702-C2340 OT-23 pcb40mm marking code sot-23 697 marking code sot23 697

    TA8403

    Abstract: voltage TA8403k TA8403K
    Text: TO SH IB A _ TA8403K TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8403 K POWER AMPLIFIER FOR DRIVING A DEFLECTION CIRCUIT OF A COLOR TELEVISION TA84Q3K is a power amplifier for driving a vertical deflection circuit of a small and medium screen size color


    OCR Scan     		PDF TA8403K TA8403 TA84Q3K TA8403K TA8879N. voltage TA8403k

    d29 transistor to-98 package

    Abstract: al p55 transistor MB90246A 16-bit-PWM mccr capacitors
    Text: 16-bit Proprietary Microcontroller F2MC-16F MB90246A Series MB90246A • DESCRIPTION The MB90246A series is a 16-bit microcontroller optimum to control mechatronics such as a hard disk drive unit. The instruction set of F2MC-16F CPU core inherits AT architecture of F2MC*-16/16H family with additional


    OCR Scan     		PDF DS07-13505-5E 16-bit F2MC-16F MB90246A MB90246A -16/16H 32-bit d29 transistor to-98 package al p55 transistor 16-bit-PWM mccr capacitors